公开(公告)号：US20110076852A1

公开(公告)日：2011-03-31

申请号：US12893964

申请日：2010-09-29

申请人： Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI ,  Atsushi MIZUTANI ,  Hiroyuki SEKI ,  Hideo FUSHIMI ,  Tomoo KATO

发明人： Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI ,  Atsushi MIZUTANI ,  Hiroyuki SEKI ,  Hideo FUSHIMI ,  Tomoo KATO

IPC分类号： H01L21/3065 ,  C11D7/32

CPC分类号： G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

摘要： A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.

摘要翻译： 提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物， 和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。

公开(公告)号：US20110281436A1

公开(公告)日：2011-11-17

申请号：US13107199

申请日：2011-05-13

申请人： Tadashi INABA ,  Kazutaka TAKAHASHI ,  Tomonori TAKAHASHI ,  Atsushi MIZUTANI

发明人： Tadashi INABA ,  Kazutaka TAKAHASHI ,  Tomonori TAKAHASHI ,  Atsushi MIZUTANI

IPC分类号： H01L21/3065 ,  C11D7/60

CPC分类号： C11D11/0047 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5004

摘要： Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.

摘要翻译： 本发明提供能够抑制半导体衬底的金属腐蚀并且具有优异的半导体衬底上的等离子体蚀刻残留物和/或灰化残留物的可除去性的清洁组合物，半导体器件的制造方法和清洁方法 使用清洁组合物。 用于除去形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，以及使用该清洁组合物的半导体器件的制备方法和清洁方法，其中所述清洁组合物包含（组分a）水; （组分b）胺化合物; （组分c）羟胺和/或其盐; （组分d）季铵化合物; （组分e）有机酸; 和（组分f）水溶性有机溶剂; pH为6〜9。

公开(公告)号：US20100167535A1

公开(公告)日：2010-07-01

申请号：US12642882

申请日：2009-12-21

申请人： Yoshinori NISHIWAKI ,  Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI

发明人： Yoshinori NISHIWAKI ,  Tomonori TAKAHASHI ,  Kazutaka TAKAHASHI

IPC分类号： H01L21/321 ,  C11D7/26 ,  C11D7/32

CPC分类号： C11D3/2075 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A cleaning agent used after chemical mechanical polishing of a semiconductor device, the cleaning agent including a polycarboxylic acid and diethylenetriamine pentaacetic acid, the semiconductor device including a copper diffusion barrier film and copper wiring on an interlayer dielectric film, and the dielectric film containing SiOC and having a dielectric constant of 3.0 or less.

摘要翻译： 在半导体装置进行化学机械抛光后使用的清洗剂，所述清洗剂包括多元羧酸和二亚乙基三胺五乙酸，所述半导体装置包括铜扩散阻挡膜和层间电介质膜上的铜布线，所述电介质膜含有SiOC和 介电常数为3.0以下。

公开(公告)号：US20070210016A1

公开(公告)日：2007-09-13

申请号：US11675907

申请日：2007-02-16

申请人： Tomonori TAKAHASHI ,  Satoshi SAKASHITA

发明人： Tomonori TAKAHASHI ,  Satoshi SAKASHITA

IPC分类号： C02F1/00

CPC分类号： B01D39/2068 ,  B01D29/52 ,  B01D29/66 ,  B01D63/066 ,  B01D65/02 ,  B01D2201/62 ,  B01D2313/10 ,  B01D2321/04

摘要： The present inventive filter is a columnar porous body 1 having numerous flow paths 2 formed in parallel in axial direction, numerous liquid collecting slits 3 formed with extending in axial direction and allowing a group of the flow paths formed in parallel and the outside of the porous body to communicate with each other, wherein a group of the flow paths 2a communicating with the liquid collecting slits 3 are plugged at both ends. Liquid collecting slits 3a into which the backwashing liquid can flow among the liquid collecting slits 3 are disposed in such a manner that 75% or more of the length in axial direction is positioned on backwashing liquid non-outflow end side with respect to the position which is 60% of the length of the porous body 1 in axial direction from the backwashing liquid outflow end of the porous body 1.

摘要翻译： 本发明的过滤器是具有沿轴向平行形成的多个流路2的多孔体1，多个液体收集狭缝3，其形成为沿轴向延伸，并且允许一组平行形成的流路和多孔 主体彼此连通，其中与液体收集狭缝3连通的一组流路2a在两端被堵塞。 反冲洗液体能够在液体收集狭缝3之间流动的液体收集狭缝3a设置成使轴向长度的75％以上位于相对于位置的反冲洗液体非流出端侧 多孔体1的反冲洗液流出端的多孔体1的轴向长度的60％。