SOI sense amplifier with cross-coupled body terminal
    2.
    发明申请
    SOI sense amplifier with cross-coupled body terminal 有权
    具有交叉耦合体端子的SOI读出放大器

    公开(公告)号:US20050264324A1

    公开(公告)日:2005-12-01

    申请号:US10852863

    申请日:2004-05-25

    摘要: Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.

    摘要翻译: 用于通过将这些晶体管的主体连接到除地之外的电压来增加可以流过读出放大器中的数据线下拉晶体管的电流量的系统和方法。 在一个实施例中,读出放大器中的数据线下拉晶体管的主体被连接到读出放大器的相对侧上的中间节点,以增加通过数据线下拉晶体管的电流,并且还减少 通过位线晶体管的动作将中间节点处的电压拉低。 在一个实施例中,读出放大器还包括将中间节点预充电到未被下拉晶体管的阈值电压降低的预定电压的预充电电路。

    SOI sense amplifier with cross-coupled bit line structure
    3.
    发明授权
    SOI sense amplifier with cross-coupled bit line structure 有权
    具有交叉耦合位线结构的SOI读出放大器

    公开(公告)号:US07046045B2

    公开(公告)日:2006-05-16

    申请号:US10852889

    申请日:2004-05-25

    IPC分类号: G01R19/00 G11C7/00 H03F3/45

    CPC分类号: H03F3/45188

    摘要: Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.

    摘要翻译: 当读出放大器不是时,将读出放大器的中间节点预充电到相对位线上的电压,从而降低读出放大器对数据线下拉晶体管阈值电压变化的灵敏度的系统和方法 启用 在一个实施例中,中间节点通过晶体管耦合到输入位线,晶体管在读出放大器未使能时被接通,当读出放大器被使能时,它们被关断。 在一个实施例中,中间节点在被预充电到位线上的电压之前被预充电到预定电压。 在一个实施例中,数据线下拉晶体管的主体也可以被机构连接到相对的中间节点,以增加通过这些晶体管的电流,特别是在读出放大器的一侧,当读出放大器 启用。

    Apparatus and method of word line decoding for deep pipelined memory
    4.
    发明申请
    Apparatus and method of word line decoding for deep pipelined memory 失效
    深层流水线存储器的字线解码装置及方法

    公开(公告)号:US20060098520A1

    公开(公告)日:2006-05-11

    申请号:US10982109

    申请日:2004-11-05

    IPC分类号: G11C8/00 G11C7/10

    CPC分类号: G11C7/1039 G11C8/08 G11C8/10

    摘要: A method, an apparatus, and a computer program are provided to reduce the number of required latches in a deep pipeline wordline (WL) decoder. Traditionally, a signal local clock buffer (LCB) has been responsible for providing a driving signal to a WL driver. However, with this configuration, a large number of latches are utilized. To reduce this latch usage, a number of LCBs are employed, such that one latch can enable an increased number of WLs. Hence, the overall area occupied by latches is reduced and power consumption is reduced.

    摘要翻译: 提供了一种方法,装置和计算机程序以减少深流水线字线(WL)解码器中所需的锁存器的数量。 传统上,信号本地时钟缓冲器(LCB)已经负责向WL驱动器提供驱动信号。 然而,利用该配置,使用大量的锁存器。 为了减少该锁存器的使用,采用多个LCB,使得一个锁存器能够增加数量的WL。 因此,锁存器占用的总体面积减少,功耗降低。

    SOI sense amplifier with cross-coupled bit line structure
    5.
    发明申请
    SOI sense amplifier with cross-coupled bit line structure 有权
    具有交叉耦合位线结构的SOI读出放大器

    公开(公告)号:US20050264323A1

    公开(公告)日:2005-12-01

    申请号:US10852889

    申请日:2004-05-25

    IPC分类号: G11C11/419 H03F3/45

    CPC分类号: H03F3/45188

    摘要: Systems and methods for decreasing the sensitivity of a sense amplifier to variations in the threshold voltages of the data line pull-down transistors by pre-charging the intermediate nodes of the sense amplifier to the voltages on the opposing bit lines when the sense amplifier is not enabled. In one embodiment, the intermediate nodes are coupled to the input bit lines through transistors that are switched on when the sense amplifier is not enabled and switched off when the sense amplifier is enabled. In one embodiment, the intermediate nodes are pre-charged to a predetermined voltage before being pre-charged to the voltages on the bit lines. In one embodiment, the bodies of the data line pull-down transistors may also be body-tied to the opposing intermediate nodes to increase current flow through these transistors, particularly on the side of the sense amplifier that will be pulled low when the sense amplifier is enabled.

    摘要翻译: 当读出放大器不是时,将读出放大器的中间节点预充电到相对位线上的电压,从而降低读出放大器对数据线下拉晶体管阈值电压变化的灵敏度的系统和方法 启用 在一个实施例中,中间节点通过晶体管耦合到输入位线,晶体管在读出放大器未使能时被接通,当读出放大器被使能时,它们被关断。 在一个实施例中,中间节点在被预充电到位线上的电压之前被预充电到预定电压。 在一个实施例中,数据线下拉晶体管的主体也可以被机构连接到相对的中间节点,以增加通过这些晶体管的电流,特别是在读出放大器的一侧,当读出放大器 启用。

    SOI sense amplifier with cross-coupled body terminal
    7.
    发明授权
    SOI sense amplifier with cross-coupled body terminal 有权
    具有交叉耦合体端子的SOI读出放大器

    公开(公告)号:US07053668B2

    公开(公告)日:2006-05-30

    申请号:US10852863

    申请日:2004-05-25

    IPC分类号: G01R19/00 G11C7/00 H03F3/45

    摘要: Systems and methods for increasing the amount of current that can flow through the data line pull-down transistors in a sense amplifier by tying the bodies of these transistors to a voltage other than ground. In one embodiment, the bodies of the data line pull-down transistors in a sense amplifier are tied to the intermediate nodes on the opposing side of the sense amplifier to increase the current flow through the data line pull-down transistors, and also to reduce the voltage at the intermediate node that will be pulled low by the action of the bit line transistors. In one embodiment, the sense amplifier also includes pre-charge circuits which pre-charge the intermediate nodes to a predetermined voltage that is not reduced by the threshold voltage of the pull-down transistors.

    摘要翻译: 用于通过将这些晶体管的主体连接到除地之外的电压来增加可以流过读出放大器中的数据线下拉晶体管的电流量的系统和方法。 在一个实施例中,读出放大器中的数据线下拉晶体管的主体被连接到读出放大器的相对侧上的中间节点,以增加通过数据线下拉晶体管的电流,并且还减少 通过位线晶体管的动作将中间节点处的电压拉低。 在一个实施例中,读出放大器还包括将中间节点预充电到未被下拉晶体管的阈值电压降低的预定电压的预充电电路。

    SOI sense amplifier with pre-charge
    8.
    发明申请
    SOI sense amplifier with pre-charge 审中-公开
    具有预充电的SOI读出放大器

    公开(公告)号:US20050264322A1

    公开(公告)日:2005-12-01

    申请号:US10852868

    申请日:2004-05-25

    摘要: Systems and methods for pre-charging opposing nodes in a sense amplifier to substantially the same voltage in order to reduce or eliminate malfunctions arising from differences in threshold voltages of transistors coupled to the opposing nodes. One embodiment is a method including providing a silicon-on-insulator (SOI) sense amplifier having intermediate nodes between the transistors coupling each output data line to the corresponding input bit line and pre-charging each intermediate node to a predetermined voltage while the sense amplifier is not enabled. In one embodiment, the intermediate nodes are pre-charged by coupling them to a voltage source through pre-charge paths that do not include the data line pull-down transistors. In one embodiment, the method also includes decoupling the pre-charge paths after pre-charging the intermediate nodes and then enabling the sense amplifier.

    摘要翻译: 用于将读出放大器中的相对节点预充电到基本相同的电压的系统和方法,以便减少或消除由耦合到相对节点的晶体管的阈值电压的差异引起的故障。 一个实施例是一种方法,包括提供绝缘体上硅(SOI)读出放大器,该晶体管在晶体管之间具有中间节点,每个晶体管将每个输出数据线耦合到相应的输入位线,并将每个中间节点预充电到预定电压,而读出放大器 未启用 在一个实施例中,中间节点通过不包括数据线下拉晶体管的预充电路径将其耦合到电压源进行预充电。 在一个实施例中,该方法还包括在对中间节点预充电然后启用读出放大器之后去耦合预充电路径。

    Methods and apparatus for reducing leakage current in a disabled SOI circuit
    9.
    发明申请
    Methods and apparatus for reducing leakage current in a disabled SOI circuit 有权
    用于减少残留SOI电路中漏电流的方法和装置

    公开(公告)号:US20060270173A1

    公开(公告)日:2006-11-30

    申请号:US11137234

    申请日:2005-05-25

    CPC分类号: H03K19/0016

    摘要: Methods and apparatus provide for enabling a digital circuit by biasing at least one switch transistor ON such that a voltage potential of a virtual ground node is substantially equal to a voltage potential of a ground node for a power supply to the digital circuit, wherein the digital circuit is implemented using a plurality of transistors in a silicon-on-insulator (SOI) arrangement and at least some of the transistors are referenced to the virtual ground node; and disabling the digital circuit by biasing a gate terminal of the switch transistor below the voltage potential of the ground node.

    摘要翻译: 方法和装置提供了通过使至少一个开关晶体管导通来使能数字电路,使得虚拟接地节点的电压电位基本上等于用于数字电路的电源的接地节点的电压电位,其中数字 电路使用绝缘体上硅(SOI)布置中的多个晶体管实现,并且至少一些晶体管参考虚拟接地节点; 以及通过将所述开关晶体管的栅极端子偏压到所述接地节点的电压电位以下来禁止所述数字电路。

    Method and apparatus for wordline redundancy control of memory in an information handling system
    10.
    发明授权
    Method and apparatus for wordline redundancy control of memory in an information handling system 失效
    用于信息处理系统中存储器的字线冗余控制的方法和装置

    公开(公告)号:US07423921B2

    公开(公告)日:2008-09-09

    申请号:US11457507

    申请日:2006-07-14

    IPC分类号: G11C7/00

    CPC分类号: G11C29/848

    摘要: A memory system including a memory array with redundant wordlines. The memory system includes a memory wordline tester that determines if any of the wordlines exhibits a defect. The memory system also includes decoder redundancy logic that efficiently couples to wordline shift logic using a reduced number of control signal lines therebetween. The shift logic shifts defective wordlines to upstream wordlines in the array to bypass the defective wordlines.

    摘要翻译: 包括具有冗余字线的存储器阵列的存储器系统。 存储器系统包括存储器字线测试器,其确定任何字线是否存在缺陷。 存储器系统还包括使用其间数量减少的控制信号线有效地耦合到字线移位逻辑的解码器冗余逻辑。 移位逻辑将有缺陷的字线转移到阵列中的上游字线以绕过有缺陷的字线。