公开(公告)号：US08222643B2

公开(公告)日：2012-07-17

申请号：US12603049

申请日：2009-10-21

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L29/04 ,  H01L31/20

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

摘要翻译： 一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

公开(公告)号：US08482008B2

公开(公告)日：2013-07-09

申请号：US13444003

申请日：2012-04-11

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L29/04 ,  H01L31/20

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

摘要翻译： 一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

公开(公告)号：US20100038646A1

公开(公告)日：2010-02-18

申请号：US12603049

申请日：2009-10-21

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

摘要翻译： 一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

公开(公告)号：US07629208B2

公开(公告)日：2009-12-08

申请号：US11744299

申请日：2007-05-04

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.

摘要翻译： 提供一种能够抑制薄膜晶体管的特性变化而不劣化其特性的薄膜晶体管的制造方法。 通过光热转换层和缓冲层的间接热处理形成晶体硅膜。 通过图案化缓冲层和绝缘膜，在对应于晶体硅膜上的沟道区域的区域中选择性地形成沟道保护膜。 此外，当选择性地去除n +硅膜和金属层时，沟道保护膜用作蚀刻停止层。 当形成结晶硅膜时，均匀地供应热量。 此外，在蚀刻中，晶体硅膜的沟道区被保护。

公开(公告)号：US20120256182A1

公开(公告)日：2012-10-11

申请号：US13529550

申请日：2012-06-21

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment.

摘要翻译： 一种薄膜晶体管，其具有通过用光束照射非晶硅膜通过光热转换层和绝缘膜形成的晶体硅膜，以提供非晶硅膜的热处理。

公开(公告)号：US20080142800A1

公开(公告)日：2008-06-19

申请号：US11744299

申请日：2007-05-04

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A method of manufacturing a thin film transistor capable of inhibiting the characteristics variation of the thin film transistor without deteriorating the characteristics thereof is provided. A crystalline silicon film is formed by indirect heat treatment through a photothermal conversion layer and a buffer layer. By patterning the buffer layer and an insulating film, a channel protective film is selectively formed in a region corresponding to a channel region on the crystalline silicon film. Further, when an n+ silicon film and a metal layer are selectively removed, the channel protective film functions as an etching stopper. When the crystalline silicon film is formed, heat is uniformly supplied. Further, in etching, the channel region of the crystalline silicon film is protected.

摘要翻译： 提供一种能够抑制薄膜晶体管的特性变化而不劣化其特性的薄膜晶体管的制造方法。 通过光热转换层和缓冲层的间接热处理形成晶体硅膜。 通过图案化缓冲层和绝缘膜，在对应于晶体硅膜上的沟道区域的区域中选择性地形成沟道保护膜。 此外，当选择性地去除n +硅膜和金属层时，沟道保护膜用作蚀刻停止层。 当形成结晶硅膜时，均匀地供应热量。 此外，在蚀刻中，晶体硅膜的沟道区被保护。

公开(公告)号：US08738267B2

公开(公告)日：2014-05-27

申请号：US12761815

申请日：2010-04-16

申请人： Toshiaki Arai ,  Tadayoshi Okada

发明人： Toshiaki Arai ,  Tadayoshi Okada

IPC分类号： G06F7/00

CPC分类号： B60W40/072 ,  B60W30/17 ,  B60W40/076 ,  B60W2520/10 ,  B60W2520/105 ,  B60W2550/142 ,  B60W2750/308

摘要： A vehicular travel control device according to the invention includes an inter-vehicle distance measuring section that is mounted on a subject vehicle and measures an inter-vehicle distance between the subject vehicle and a preceding vehicle, a target inter-vehicle distance setting section that sets a target inter-vehicle distance, a following travel control section that performs a travel control so as to make the inter-vehicle distance become equal to the target inter-vehicle distance and stops the subject vehicle while following a stopping of the preceding vehicle, a gradient acquiring section that acquires a gradient of a road being traveled of the subject vehicle, and a vehicle speed sensor that measures a travel speed of the subject vehicle. The target inter-vehicle distance setting section sets the target inter-vehicle distance based on the gradient and the travel speed.

摘要翻译： 根据本发明的车辆行驶控制装置包括：车辆间距离测量部，其安装在本车辆上并测量本车与前方车辆之间的车辆间距离;车辆间距离设定部，其设定 目标车辆间距离，后续行驶控制部，其执行行驶控制，以使车辆间距离变得等于目标车辆间距离，并且在跟随前方车辆停止时停止本车辆; 梯度获取部分，其获取被检测车辆行驶的道路的坡度;以及车速传感器，其测量本车辆的行驶速度。 目标车间距离设定部根据坡度和行驶速度来设定目标车间距离。

公开(公告)号：US20120324039A1

公开(公告)日：2012-12-20

申请号：US13486530

申请日：2012-06-01

申请人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

发明人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

IPC分类号： G06F15/167

CPC分类号： G06F3/0604 ,  G06F3/0631 ,  G06F3/0664 ,  G06F3/067 ,  G06F9/5077

摘要： A first server including a local disk and a second server are logically partitioned by virtualization units. The first and second servers each have a storage controller LPAR with a local disk sharing function running thereon. The storage controller LPARs running on the first and second servers communicate with each other. When a disk I/O command issued by the second LPAR running on the second server is transferred to the local disk of the first server, the second LPAR reads data stored in the local disk or writes data thereto. In this way, the local disk is shared.

摘要翻译： 包括本地磁盘和第二个服务器在内的第一台服务器由虚拟化单元进行逻辑分区。 第一和第二服务器各自具有在其上运行的本地磁盘共享功能的存储控制器LPAR。 在第一和第二服务器上运行的存储控制器LPAR彼此通信。 当由在第二服务器上运行的第二LPAR发出的磁盘I / O命令被传送到第一服务器的本地磁盘时，第二LPAR读取存储在本地磁盘中的数据或向其写入数据。 这样，本地磁盘是共享的。

公开(公告)号：US20120211755A1

公开(公告)日：2012-08-23

申请号：US13365780

申请日：2012-02-03

申请人： Takashige Fujimori ,  Toshiaki Arai

发明人： Takashige Fujimori ,  Toshiaki Arai

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606

摘要： Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.

摘要翻译： 本发明公开了一种薄膜晶体管的制造方法，包括：在栅电极之上形成由氧化物半导体构成的沟道层，其间设置有栅极绝缘膜，形成由适于覆盖沟道层的导电材料制成的沟道保护膜 以及与沟道保护膜接触的方式形成一对源电极和漏电极; 并且通过依赖于导电材料和结晶氧化物半导体之间的选择性的蚀刻去除源/漏电极之间的沟道保护膜的区域。

公开(公告)号：US20120046844A1

公开(公告)日：2012-02-23

申请号：US13257223

申请日：2010-05-14

申请人： Tadayoshi Okada ,  Toshiaki Arai

发明人： Tadayoshi Okada ,  Toshiaki Arai

IPC分类号： B60W30/18 ,  B60W10/18 ,  B60W10/04

CPC分类号： B60W30/18018 ,  B60T7/122 ,  B60T7/22 ,  B60W10/06 ,  B60W10/184 ,  B60W30/18027 ,  B60W30/18063 ,  B60W30/18118 ,  B60W2550/142 ,  B60W2710/105

摘要： When a start-up operation by a driver is detected while a vehicle is maintained at a stopped state, a target driving force for suppressing the movement of the vehicle on the road to be driven is calculated, based on the grade obtained regarding the road to be driven on. After the vehicle is driven by the target driving force, the braking force is released so as to terminate the maintaining of the stopped state of the vehicle. Preferably, the state of being driven by the target driving force is maintained until the releasing of the braking force is completed. When the releasing of the braking force is completed, the driving force is increased to start-up the vehicle. With such a start-up control, vehicles are prevented from moving temporarily in a direction opposite from the traveling direction, and a smooth star-up can be achieved.

摘要翻译： 当车辆维持在停止状态时，当检测到驾驶员的起动操作时，根据获得的关于道路的等级来计算用于抑制待行驶的道路上的车辆的移动的目标驱动力 被驱赶。 在车辆被目标驱动力驱动之后，释放制动力，以终止车辆的停止状态的维持。 优选地，保持由目标驱动力驱动的状态，直到制动力的释放完成。 当制动力的释放完成时，驱动力增加以启动车辆。 通过这种启动控制，防止车辆沿与行进方向相反的方向临时移动，并且可以实现平稳的起落。