公开(公告)号：US06780547B2

公开(公告)日：2004-08-24

申请号：US09825578

申请日：2001-04-03

申请人： Toshiaki Motonaga ,  Norihito Ito ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

发明人： Toshiaki Motonaga ,  Norihito Ito ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

IPC分类号： G03F900

CPC分类号： G03F1/32

摘要： In a halftone phase shifting photomask 108, having a pattern of halftone phase shifting film 102 containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250° C. and 500° C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased.

摘要翻译： 在具有至少包含铬和氟的半色调相移膜102的图案的半色调相移光掩模108中，半色调相移膜在250℃和500℃之间的温度下进行热处理，从而改变 通过施加用于暴露于膜的准分子激光器制造的膜的光学性能降低。

公开(公告)号：US06709791B1

公开(公告)日：2004-03-23

申请号：US09807276

申请日：2001-04-10

申请人： Hiroshi Mohri ,  Toshiaki Motonaga ,  Chiaki Hatsuta ,  Norihito Ito ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

发明人： Hiroshi Mohri ,  Toshiaki Motonaga ,  Chiaki Hatsuta ,  Norihito Ito ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/34

摘要： The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask 108 comprising a pattern of halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101, wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light 109 having a wavelength substantially absorbed by halftone phase shift film 102.

摘要翻译： 本发明涉及一种半色调相移光掩模，其透射率和相位角即使在用于长时间曝光的受激准分子激光器照射时也保持不变，并且提供了一种空白，并提供了一种半色调相移掩模108，其包括 在透明基板101上含有至少铬和氟的半色调相移膜102，其中通过曝光准分子激光器照射时的光学特性变化已经减少了通过半色调相移膜102基本吸收的波长的光109照射的图案 。

公开(公告)号：US06869736B2

公开(公告)日：2005-03-22

申请号：US10363604

申请日：2001-09-03

申请人： Hiro-o Nakagawa ,  Toshiaki Motonaga ,  Yoshinori Kinase ,  Satoshi Yusa ,  Shigeki Sumida ,  Toshifumi Yokoyama ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Masashi Ohtsuki

发明人： Hiro-o Nakagawa ,  Toshiaki Motonaga ,  Yoshinori Kinase ,  Satoshi Yusa ,  Shigeki Sumida ,  Toshifumi Yokoyama ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Masashi Ohtsuki

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F1/32 ,  G03F1/58

摘要： Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.

摘要翻译： 公开了一种用于半色调相移光掩模的空白，其包括透明基板和形成在其上的半色调相移层，所述半色调相移层设置有含有硅化钼作为其主要成分的层和氧和氮中的一个或两个， 由具有两层或更多层的多层膜形成，其中多层膜含有主要成分为铬和钽之一或铬钽合金的层，其主要成分为铬和钽之一或铬 钽合金层叠在比含有硅化钼作为其主要成分的层和氧和氮中的任一个或两者更靠近透明基板的一侧。

公开(公告)号：US06599667B2

公开(公告)日：2003-07-29

申请号：US09843309

申请日：2001-04-26

申请人： Satoshi Yusa ,  Toshifumi Yokoyama ,  Shigeki Sumida ,  Toshiaki Motonaga ,  Yoshinori Kinase ,  Hiro-o Nakagawa ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Masashi Ohtsuki

发明人： Satoshi Yusa ,  Toshifumi Yokoyama ,  Shigeki Sumida ,  Toshiaki Motonaga ,  Yoshinori Kinase ,  Hiro-o Nakagawa ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Masashi Ohtsuki

IPC分类号： G03F900

CPC分类号： G03F1/32

摘要： A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.

公开(公告)号：US06740455B2

公开(公告)日：2004-05-25

申请号：US10023841

申请日：2001-12-21

申请人： Kenji Noguchi ,  Toshiaki Motonaga ,  Hiro-o Nakagawa ,  Yasutaka Morikawa ,  Toshifumi Yokoyama ,  Takashi Tominaga ,  Yoshinori Kinase ,  Junji Fujikawa ,  Yoichi Takahashi

发明人： Kenji Noguchi ,  Toshiaki Motonaga ,  Hiro-o Nakagawa ,  Yasutaka Morikawa ,  Toshifumi Yokoyama ,  Takashi Tominaga ,  Yoshinori Kinase ,  Junji Fujikawa ,  Yoichi Takahashi

IPC分类号： G03F900

CPC分类号： G03F1/50

摘要： A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.

摘要翻译： 制造了能够简化光刻步骤的光掩模。 光掩模设置有在透明基板上由屏蔽金属薄膜制成的屏蔽图案，其中光掩模还包括主要包括选自硅化钽，氧化钽，氮化钽或其混合物的材料的钽的半透明图案。

公开(公告)号：US06458496B2

公开(公告)日：2002-10-01

申请号：US09736805

申请日：2000-12-14

申请人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

发明人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

IPC分类号： G03S900

CPC分类号： G03F1/32 ,  B32B17/06

摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.

摘要翻译： 本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层 并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。 由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。 当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性 这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。 结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

公开(公告)号：US06933082B2

公开(公告)日：2005-08-23

申请号：US10288936

申请日：2002-11-06

申请人： Toshiaki Motonaga ,  Hiro-o Nakagawa

发明人： Toshiaki Motonaga ,  Hiro-o Nakagawa

IPC分类号： G03F1/50 ,  G03F1/62 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/62 ,  G03F1/48 ,  G03F7/70983

摘要： It is an object of the present invention to provide a photomask equipped with a dust-proofing device which has high ultraviolet transmittance in a short wavelength region and high light resistance and is free from the necessity of the substitution with inert gas and also to, provide an exposure method using this photomask. The photomask equipped with a dust-proofing device is produced by overlapping a ultraviolet ray-transmittable transparent substrate on the side of the light-shading film pattern surface of the photomask to apply the photomask to the transparent substrate tightly by exhausting and removing the air present between the photomask and the transparent substrate. A transparent film which transmits ultraviolet rays maybe formed on the surface of the photomask on the side of a light-shading film pattern surface and a ultraviolet ray-transmittable transparent substrate may be overlapped on the transparent film to apply the photomask to the transparent substrate tightly by exhausting and removing the air present between the transparent film and the transparent substrate.

摘要翻译： 本发明的目的是提供一种配有防尘装置的光掩模，该防尘装置在短波长区域具有高的紫外线透射率和高的耐光性，并且不需要用惰性气体取代，并且还提供 使用该光掩模的曝光方法。 配置有防尘装置的光掩模是通过在光掩模的遮光膜图案表面侧重叠紫外线透射透明基板来制造的，以通过排出和除去存在的空气将光掩模施加到透明基板上 在光掩模和透明基板之间。 可以在遮光膜图案表面侧的光掩模的表面上形成透射紫外线的透明膜，并且可透过紫外线的透明基板重叠在透明膜上，以将光掩模施加到透明基板上 通过排出和去除透明膜和透明基板之间存在的空气。