公开(公告)号：US06709791B1

公开(公告)日：2004-03-23

申请号：US09807276

申请日：2001-04-10

申请人： Hiroshi Mohri ,  Toshiaki Motonaga ,  Chiaki Hatsuta ,  Norihito Ito ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

发明人： Hiroshi Mohri ,  Toshiaki Motonaga ,  Chiaki Hatsuta ,  Norihito Ito ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/34

摘要： The invention relates to a halftone phase shift photomask whose transmittance and phase angle remain unchanged even when irradiated with an excimer laser used for exposure over an extended period of time, and a blank therefor, and provides a halftone phase shift mask 108 comprising a pattern of halftone phase shift film 102 containing at least chromium and fluorine on a transparent substrate 101, wherein optical characteristic changes upon irradiation with an exposure excimer laser have been reduced by patterning a film irradiated with light 109 having a wavelength substantially absorbed by halftone phase shift film 102.

摘要翻译： 本发明涉及一种半色调相移光掩模，其透射率和相位角即使在用于长时间曝光的受激准分子激光器照射时也保持不变，并且提供了一种空白，并提供了一种半色调相移掩模108，其包括 在透明基板101上含有至少铬和氟的半色调相移膜102，其中通过曝光准分子激光器照射时的光学特性变化已经减少了通过半色调相移膜102基本吸收的波长的光109照射的图案 。

公开(公告)号：US06780547B2

公开(公告)日：2004-08-24

申请号：US09825578

申请日：2001-04-03

申请人： Toshiaki Motonaga ,  Norihito Ito ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

发明人： Toshiaki Motonaga ,  Norihito Ito ,  Chiaki Hatsuta ,  Junji Fujikawa ,  Naoya Hayashi ,  Toshio Onodera ,  Takahiro Matsuo ,  Toru Ogawa ,  Keisuke Nakazawa

IPC分类号： G03F900

CPC分类号： G03F1/32

摘要： In a halftone phase shifting photomask 108, having a pattern of halftone phase shifting film 102 containing at least chromium and fluorine, the halftone phase shifting film is heat-treated at a temperature between 250° C. and 500° C. so that a change of the optical property of the film produced by the application of excimer laser for exposure to the film is decreased.

摘要翻译： 在具有至少包含铬和氟的半色调相移膜102的图案的半色调相移光掩模108中，半色调相移膜在250℃和500℃之间的温度下进行热处理，从而改变 通过施加用于暴露于膜的准分子激光器制造的膜的光学性能降低。

公开(公告)号：US08835279B2

公开(公告)日：2014-09-16

申请号：US13425592

申请日：2012-03-21

申请人： Keisuke Nakazawa

发明人： Keisuke Nakazawa

IPC分类号： H01L21/28 ,  H01L21/76 ,  H01L21/336 ,  H01L29/76 ,  H01L29/788 ,  H01L21/70 ,  H01L27/115 ,  H01L21/764

CPC分类号： H01L27/11524 ,  H01L21/764

摘要： According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a tunnel insulating film and a first conductive film are formed on a semiconductor layer. A trench is formed. A first sacrifice film is buried in the trench. A second sacrifice film having density higher than that of the first sacrifice film is formed on the first sacrifice film in the trench. An insulating film is formed on the first conductive film and the second sacrifice film. A second conductive film is formed on the insulating film. The second sacrifice film is exposed. The first sacrifice film and the second sacrifice film are removed.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，在半导体层上形成隧道绝缘膜和第一导电膜。 形成沟槽。 第一把牺牲电影埋在沟里。 在沟槽中的第一牺牲膜上形成密度高于第一牺牲膜的第二牺牲膜。 在第一导电膜和第二牺牲膜上形成绝缘膜。 在绝缘膜上形成第二导电膜。 第二件牺牲片暴露出来。 第一牺牲膜和第二牺牲膜被去除。

公开(公告)号：US08659114B2

公开(公告)日：2014-02-25

申请号：US13309730

申请日：2011-12-02

申请人： Keisuke Nakazawa

发明人： Keisuke Nakazawa

IPC分类号： H01L21/70 ,  H01L21/31

CPC分类号： H01L29/7881 ,  H01L21/76224 ,  H01L21/76227 ,  H01L29/66795 ,  H01L29/66825 ,  H01L29/785

摘要： According to one embodiment, a semiconductor device includes a semiconductor substrate, a trench formed in an element isolating area of the semiconductor substrate, and a silicon oxide film that is embedded in the trench and contains an alkali metal element or alkali earth metal element.

摘要翻译： 根据一个实施例，半导体器件包括半导体衬底，形成在半导体衬底的元件隔离区域中的沟槽和埋入沟槽中并含有碱金属元素或碱土金属元素的氧化硅膜。

公开(公告)号：US08642409B2

公开(公告)日：2014-02-04

申请号：US13424071

申请日：2012-03-19

申请人： Keisuke Nakazawa

发明人： Keisuke Nakazawa

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/336

CPC分类号： H01L29/7851 ,  H01L29/66795

摘要： According to one embodiment, there is provided a method of manufacturing a semiconductor device. In the method, a substrate portion and a fin portion on the substrate portion are formed. A first silicon oxide film is formed on each side surface of the fin portion. A polysilazane film having an upper surface lower than the upper surface of the first silicon oxide film is formed on each side surface of the first silicon oxide film. The polysilazane film is converted into a silicon oxynitride film. The first silicon oxide film is etched to make the upper surface of the first silicon oxide film not higher than the upper surface of the silicon oxynitride film. A heavily doped semiconductor layer is formed in the fin portion.

摘要翻译： 根据一个实施例，提供一种制造半导体器件的方法。 在该方法中，形成基板部分和基板部分上的散热片部分。 在翅片部分的每个侧表面上形成第一氧化硅膜。 在第一氧化硅膜的每个侧表面上形成具有比第一氧化硅膜的上表面低的上表面的聚硅氮烷膜。 聚硅氮烷膜被转化成氮氧化硅膜。 蚀刻第一氧化硅膜以使第一氧化硅膜的上表面不高于氧氮化硅膜的上表面。 在鳍片部分形成重掺杂的半导体层。

公开(公告)号：US07183601B2

公开(公告)日：2007-02-27

申请号：US10865812

申请日：2004-06-14

申请人： Keisuke Nakazawa

发明人： Keisuke Nakazawa

IPC分类号： H01L29/76

CPC分类号： H01L28/75 ,  H01L28/55 ,  H01L28/65

摘要： Disclosed in a semiconductor device comprising a semiconductor substrate, and a ferroelectric layer provided above the semiconductor substrate and sandwiched between a lower electrode and an upper electrode, the lower electrode comprising a strontium ruthenate film having a thickness of 2 nm or less.

摘要翻译： 公开在包括半导体衬底和设置在半导体衬底之上并夹在下电极和上电极之间的铁电层的半导体器件中，下电极包括厚度为2nm或更小的钌酸锶膜。

公开(公告)号：US20120301343A1

公开(公告)日：2012-11-29

申请号：US13479543

申请日：2012-05-24

申请人： Keita SATOU ,  Makoto Kawamura ,  Hiroshi lijima ,  Hiroyuki Sato ,  Keisuke Nakazawa ,  Yukihiko Ando ,  Tohru Kamiyama ,  Hiroyuki Seimiya ,  Hiroki Shinkawa ,  Fumiaki Maruoka ,  Katsumi Endou ,  Masanori Ogawa

发明人： Keita SATOU ,  Makoto Kawamura ,  Hiroshi lijima ,  Hiroyuki Sato ,  Keisuke Nakazawa ,  Yukihiko Ando ,  Tohru Kamiyama ,  Hiroyuki Seimiya ,  Hiroki Shinkawa ,  Fumiaki Maruoka ,  Katsumi Endou ,  Masanori Ogawa

IPC分类号： F04C29/02

CPC分类号： F01C21/0872 ,  F04C18/3446 ,  F04C28/24 ,  F04C29/026 ,  Y10S55/14 ,  Y10S418/01

摘要： A compressor includes a main body having in a housing a vane back-pressure space configured to project a vane forming a compression room for compressing gas, and a centrifugal oil separator, wherein a discharge section to which the gas from the oil separator is ejected is formed in the housing, the oil separator includes a pressure-adjusting valve configured to adjust pressure of the vane back-pressure space according to pressure of the discharge section, and the pressure-adjusting valve is provided in the oil separator without being affected by the gas ejected from the oil separator.

摘要翻译： 一种压缩机，具有主体，该壳体具有：叶片背压空间，该叶片背压空间构成为使形成压缩气体的压缩室的叶片突出;以及离心式油分离器，其中，来自分油器的气体喷出的排出部为 形成在壳体中的油分离器包括：压力调节阀，其构造成根据排出部的压力调节叶片背压空间的压力，并且压力调节阀设置在油分离器中，不受 从油分离器喷出的气体。

公开(公告)号：US20100311220A1

公开(公告)日：2010-12-09

申请号：US12730099

申请日：2010-03-23

申请人： Shogo MATSUO ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Kazuaki Iwasawa

发明人： Shogo MATSUO ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Kazuaki Iwasawa

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/02164 ,  H01L21/02323 ,  H01L21/02343 ,  H01L21/3081 ,  H01L21/3124 ,  H01L21/3125 ,  H01L21/316 ,  H01L27/11531 ,  H01L27/11543 ,  H01L27/11548

摘要： A method for manufacturing semiconductor device has forming a plurality of trenches having at least two kinds of aspect ratios on a semiconductor substrate, filling the plurality of trenches with a coating material containing silicon, forming a mask on the coating material in a part of the trenches among the plurality of trenches filled with the coating material, implanting an ion for accelerating oxidation of the coating material into the coating material in the trenches on which the mask is not formed, forming a first insulating film by oxidizing the coating materials into which the ion is implanted, removing the coating material from the part of the trenches after removing the mask and forming a second insulating film in the part of the trenches from which the coating material is removed.

摘要翻译： 半导体器件的制造方法在半导体衬底上形成具有至少两种纵横比的多个沟槽，用包含硅的涂层材料填充多个沟槽，在沟槽的一部分中在涂层材料上形成掩模 在填充有涂层材料的多个沟槽中，将用于加速氧化涂层材料的离子注入到未形成掩模的沟槽中的涂层材料中，通过氧化其中离子的涂层材料形成第一绝缘膜 在移除掩模之后从沟槽的一部分去除涂层材料，并在去除涂层材料的沟槽部分中形成第二绝缘膜。

公开(公告)号：US20100190317A1

公开(公告)日：2010-07-29

申请号：US12691483

申请日：2010-01-21

申请人： Kazuaki IWASAWA ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

发明人： Kazuaki IWASAWA ,  Takeshi Hoshi ,  Keisuke Nakazawa ,  Shogo Matsuo ,  Takashi Nakao ,  Ryu Kato ,  Tetsuya Kai ,  Katsuyuki Sekine

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.

摘要翻译： 半导体器件制造方法在半导体衬底中具有形成元件隔离沟槽，在元件隔离沟槽的内部形成硅化合物膜，以便嵌入元件隔离沟槽，在第一温度下进行第一氧化处理以使表面 所述硅化合物膜能够通过氧化剂和杂质而不允许含有硅原子的挥发性物质通过的挥发性物质排放防止层，并且在比所述第一温度高的第二温度下进行第二氧化处理 温度以在元件隔离槽内形成被覆氧化硅膜。

公开(公告)号：US20090226615A1

公开(公告)日：2009-09-10

申请号：US12396706

申请日：2009-03-03

申请人： Keisuke Nakazawa

发明人： Keisuke Nakazawa

IPC分类号： B05D5/00 ,  B05C13/00

CPC分类号： B05C11/08 ,  B05D1/005 ,  G03F7/162 ,  H01L21/6715

摘要： A spin coating apparatus that supplies a coating liquid to a substrate and rotating the substrate to form a coating film, has a holding part that holds the substrate mounted thereon in a horizontal position; a rotationally driving source that rotationally drives the holding part about a rotational axis parallel with the vertical direction, thereby rotating the substrate; and a coating liquid supplying part that supplies the coating liquid to the substrate held by the holding part.

摘要翻译： 将涂布液供给到基板并旋转基板以形成涂膜的旋涂装置具有将安装在其上的基板保持在水平位置的保持部; 旋转驱动源，其围绕与所述垂直方向平行的旋转轴旋转地驱动所述保持部，从而旋转所述基板; 以及将涂布液供给到由保持部保持的基板的涂布液供给部。