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    Laser Scanning Optical Device
    4.
    发明申请
    Laser Scanning Optical Device 审中-公开
    激光扫描光学装置

    公开(公告)号：US20120268802A1

    公开(公告)日：2012-10-25

    申请号：US13434687

    申请日：2012-03-29

    申请人： Yasushi Nagasaka ,  Naoki Tajima ,  Takahiro Matsuo

    发明人： Yasushi Nagasaka ,  Naoki Tajima ,  Takahiro Matsuo

    IPC分类号： G02B26/10

    CPC分类号： G02B26/124

    摘要： The laser scanning optical device comprises: a light source; a collimator lens; a light source holder; a lens holder; a light source unit holder; a first rotation axis; and a second rotation axis. The light source includes a plurality of light emitting points. The collimator lens converts diverging rays irradiated from the light source into parallel rays. The light source holder holds the light source. The lens holder holds the collimator lens. The light source unit holder holds the light source holder and the lens holder. The first rotation axis rotates the collimator lens with respect to an ideal optical axis. The second rotation axis rotates the light source unit holder while constantly maintaining a positional relationship between the light source holder and the lens holder.

    摘要翻译： 激光扫描光学装置包括：光源; 准直透镜; 光源支架; 镜头架; 光源单元支架; 第一旋转轴; 和第二旋转轴。 光源包括多个发光点。 准直透镜将从光源照射的发散光线转换为平行光线。 光源支架保持光源。 透镜架固定准直透镜。 光源单元保持器保持光源保持器和透镜保持器。 第一旋转轴相对于理想的光轴旋转准直透镜。 第二旋转轴旋转光源单元保持器，同时保持光源保持器和透镜保持器之间的位置关系。

    METHOD AND APPARATUS FOR MANUFACTURING PERCHLORATE
    5.
    发明申请
    METHOD AND APPARATUS FOR MANUFACTURING PERCHLORATE 有权
    用于制造百草枯的方法和装置

    公开(公告)号：US20120020871A1

    公开(公告)日：2012-01-26

    申请号：US13260399

    申请日：2010-03-26

    申请人： Junichi Okuyama ,  Kumiko Yoshihisa ,  Yasunori Hamano ,  Takahiro Matsuo ,  Nobuhiko Kubota ,  Kazuo Uematsu ,  Muneo Ayabe

    发明人： Junichi Okuyama ,  Kumiko Yoshihisa ,  Yasunori Hamano ,  Takahiro Matsuo ,  Nobuhiko Kubota ,  Kazuo Uematsu ,  Muneo Ayabe

    IPC分类号： C01B11/18 ,  B01J19/08

    CPC分类号： C25B1/28 ,  C25B15/08

    摘要： The invention relates to a method of manufacturing a perchlorate including an electrolysis process (S1) in which, using an electrolysis tank (2) in which an anode section (4A) provided with an anode (4) and a cathode section (5A) provided a cathode (5) are divided by a cation exchange membrane (6), an aqueous solution of sodium chlorate is electrolytically oxidized in the anode section, a neutralization reaction process (S2) in which a substance that becomes alkaline when dissolved in water is added to the aqueous solution of perchloric acid in the anode section, which has been generated by the electrolytic oxidation, so as to synthesize a perchlorate by a neutralization reaction, and a crystallization method in which the perchlorate synthesized by the neutralization reaction process is formed into crystals, in which the crystallization method includes a crystallization method composed of three processes of an evaporation and crystallization process (S3) or an evaporation and concentration process (S21), a cooling and crystallization process (S22), and a separation process (S23).

    摘要翻译： 本发明涉及一种制造高氯酸盐的方法，包括电解方法（S1），其中使用其中设置阳极部分（4A）和阴极部分（5A）的电解槽（2） 阴极（5）被阳离子交换膜（6）分割，氯酸钠水溶液在阳极部分被电解氧化，中和反应过程（S2）中加入溶解在水中变成碱性的物质 通过电解氧化生成的阳极部中的高氯酸水溶液，通过中和反应合成高氯酸盐，将通过中和反应工序合成的高氯酸盐形成结晶的结晶法 其中结晶方法包括由蒸发和结晶过程（S3）或蒸发和浓缩的三个方法组成的结晶方法 （S21），冷却和结晶处理（S22）和分离处理（S23）。

    Part holder, substrate having same, and method of manufacturing same
    6.
    发明授权
    Part holder, substrate having same, and method of manufacturing same 失效
    部件保持器，具有相同的基板及其制造方法

    公开(公告)号：US06323440B1

    公开(公告)日：2001-11-27

    申请号：US09627891

    申请日：2000-07-28

    申请人： Yoshio Maruyama ,  Takahiro Matsuo ,  Osamu Hikita ,  Shinji Kadoriku

    发明人： Yoshio Maruyama ,  Takahiro Matsuo ,  Osamu Hikita ,  Shinji Kadoriku

    IPC分类号： H01R922

    CPC分类号： H05K3/301 ,  H05K3/202

    摘要： A part holder comprising holding members (8, 9) extending upward on a base (10) to hold a part (11), insertion holes (12) penetrating the base (10) and passing lead wires (12) of the part (11) through when the part (11) is held by the holding members, and supports (17) extending downward on the base (10) and adapted to be supported on a substrate (15), on which a predetermined electric circuit is formed.

    摘要翻译： 一种部件保持器，包括在基座（10）上向上延伸以保持部分（11）的保持构件（8,9），穿过基座（10）的插入孔（12）和穿过部分（11）的引线（12） ），并且在基部（10）上向下延伸并且支撑在基板（15）上的支撑体（17），在基板（15）上形成有预定的电路。

    Pattern forming material and pattern forming method
    7.
    发明授权
    Pattern forming material and pattern forming method 失效
    图案形成材料和图案形成方法

    公开(公告)号：US06306556B1

    公开(公告)日：2001-10-23

    申请号：US09551656

    申请日：2000-04-18

    申请人： Takahiro Matsuo ,  Masayuki Endo ,  Masamitsu Shirai ,  Masahiro Tsunooka

    发明人： Takahiro Matsuo ,  Masayuki Endo ,  Masamitsu Shirai ,  Masahiro Tsunooka

    IPC分类号： G03C1725

    CPC分类号： G03F7/265 ,  G03F7/0045 ,  G03F7/039

    摘要： A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: wherein R1 indicates a hydrogen atom or an alkyl group; R2 and R3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0

    摘要翻译： 图案形成材料包括由以下通式表示的二元共聚物或通过使二元共聚物与另一基团进一步聚合而获得的三元或更高级共聚物：其中R1表示氢原子或烷基; R2和R3独立地表示氢原子，烷基，苯基或烯基，或者一起表示环状烷基，环状烯基，具有苯基的环状烷基或具有苯基的环状链烯基 ; R4表示氢原子或烷基; x满足0

    Method of forming micropatterns utilizing silylation and overall energy beam exposure
    8.
    发明授权
    Method of forming micropatterns utilizing silylation and overall energy beam exposure 失效
    使用甲硅烷基化和总能量束曝光形成微图案的方法

    公开(公告)号：US5679500A

    公开(公告)日：1997-10-21

    申请号：US564822

    申请日：1995-11-29

    申请人： Takahiro Matsuo ,  Kazuhiro Yamashita ,  Masayuki Endo ,  Masaru Sasago

    发明人： Takahiro Matsuo ,  Kazuhiro Yamashita ,  Masayuki Endo ,  Masaru Sasago

    IPC分类号： G03F7/26 ,  G03F7/32 ,  H01L21/027 ,  H01L21/033 ,  G03F7/36 ,  G03F7/38

    CPC分类号： G03F7/322 ,  G03F7/265 ,  G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0337

    摘要： A resist film is formed on a semiconductor substrate by using a chemical amplification resist which generates an acid in response to the radiation of KrF excimer laser light and which reacts with the acid. If the resist film is irradiated with the KrF excimer laser light through a mask, the acid is generated in the surface of an exposed portion of the resist film, so that the surface of the exposed portion is made hydrophilic by the acid. If water vapor is supplied to the surface of the resist film, water is diffused from the surface of the exposed portion into a deep portion. If vapor of methyltriethoxysilane is sprayed onto the surface of the resist film in air at a relative humidity of 95%, an oxide film with a sufficiently large thickness is selectively formed on the surface of the exposed portion.

    摘要翻译： 通过使用化学放大抗蚀剂在半导体衬底上形成抗蚀剂膜，所述化学放大抗蚀剂响应于KrF准分子激光的辐射而产生酸并与酸反应。 如果通过掩模用KrF准分子激光照射抗蚀剂膜，则在抗蚀剂膜的暴露部分的表面中产生酸，使得暴露部分的表面由酸形成亲水性。 如果将水蒸汽供应到抗蚀剂膜的表面，则水从暴露部分的表面扩散到深部。 如果甲基三乙氧基硅烷的蒸气在相对湿度为95％的空气中被喷涂在抗蚀剂膜的表面上，则在暴露部分的表面上选择性地形成厚度足够大的氧化物膜。