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    Blank for halftone phase shift photomask and halftone phase shift photomask
    3.
    发明授权
    Blank for halftone phase shift photomask and halftone phase shift photomask 有权
    用于半色调相移光掩模和半色调相移光掩模的空白

    公开(公告)号：US06458496B2

    公开(公告)日：2002-10-01

    申请号：US09736805

    申请日：2000-12-14

    申请人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

    发明人： Toshiaki Motonaga ,  Toshifumi Yokoyama ,  Takafumi Okamura ,  Yoshinori Kinase ,  Hiroshi Mohri ,  Junji Fujikawa ,  Hiro-o Nakagawa ,  Shigeki Sumida ,  Satoshi Yusa ,  Masashi Ohtsuki

    IPC分类号： G03S900

    CPC分类号： G03F1/32 ,  B32B17/06

    摘要： A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film. When such a blank is first etched with a fluorinated gas and then etched with chlorinated gas, because an etching selective ratio to a transparent substrate made of synthetic quartz and the like can be taken sufficiently while maintaining the applicability to the exposure light with a short wavelength that is characteristic of silicide materials in addition to good chemical stability and good processing properties that are characteristic of tantalum materials, patterning in high precision will be made possible. As a result, it is possible to obtain an ideal halftone phase shift photomask excellent in stability after mask processing and in the applicability to the short wavelength.

    摘要翻译： 本发明中的半色调相移光掩模的空白包括透明基板和设置在其上的半色调相移膜，所述半色调相移膜具有多层结构，其中至少可以用氯化气体蚀刻的第一层 并且能够用氟化气体蚀刻的第二层从靠近所述透明基板的一侧依次设置。 由硅化钽制成的薄膜适用于半色调相移薄膜的第二层。 当首先用氟化气体蚀刻这样的坯料，然后用氯化气体蚀刻时，由于可以充分利用由合成石英等制成的透明基板的蚀刻选择比，同时保持对短波长的曝光光的适用性 这是硅化物材料的特征，除了钽材料的特征的良好的化学稳定性和良好的加工性能之外，将能够高精度地进行图案化。 结果，可以获得在掩模处理之后和在短波长的适用性方面优异的理想半色调相移光掩模。

    Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it
    5.
    发明授权
    Halftone phase shift photomask and blanks for halftone phase shift photomask for producing it 失效
    半色调相移光掩模和用于生产它的半色调相移光掩模的空白

    公开(公告)号：US06764792B1

    公开(公告)日：2004-07-20

    申请号：US09830598

    申请日：2001-04-27

    申请人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

    发明人： Junji Fujikawa ,  Yoshinori Kinase ,  Takafumi Okamura ,  Hiroshi Mohri ,  Toshifumi Yokoyama ,  Haruo Kokubo

    IPC分类号： G03F900

    CPC分类号： G03F1/32 ,  G03F1/58

    摘要： The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).

    摘要翻译： 本发明涉及一种半色调相移光掩模，其在对检查的波长的透射率和测量设备方面进行精确控制，使得即使将其在曝光波长处的相位差控制在 180℃，其透过率根据需要设定在1〜20％。 半色调相移光掩模（107）包括在透明基板（101）和至少含有钽，氧，碳和氮的半色调相移膜，并且具有包括至少两个或多个不同层（102）和 （103）。

    Mask for charged particle beam exposure, and method of forming the same
    7.
    发明授权
    Mask for charged particle beam exposure, and method of forming the same 有权
    带电粒子束曝光掩模及其形成方法

    公开(公告)号：US07232631B2

    公开(公告)日：2007-06-19

    申请号：US10839772

    申请日：2004-05-04

    申请人： Kenichi Morimoto ,  Yoshinori Kinase ,  Yuki Aritsuka

    发明人： Kenichi Morimoto ,  Yoshinori Kinase ,  Yuki Aritsuka

    IPC分类号： G03F9/00

    CPC分类号： G03F1/20 ,  Y10S430/143

    摘要： The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane and is a low stress membrane having no defects and excellent uniformity and relates to its forming method. The SOI substrate is an SOI wafer which is obtained by forming an oxidized film on a first silicon wafer, forming a separation layer by hydrogen ion implantation into the first silicon wafer via the oxidized film, bonding the first silicon wafer onto a second silicon wafer, and cleaving the first silicon wafer from the second silicon wafer at the separation layer so that a silicon membrane layer is formed on the second silicon layer via the oxidized film. The method of forming the SOI wafer is characterized by comprising a step of causing epitaxial growth of silicon to form a silicon membrane layer on said silicon membrane layer simultaneously with doping either or both of boron and phosphorus.

    摘要翻译： 本发明涉及作为用于带电粒子束曝光的掩模衬底的SOI衬底，其中硅氧化膜具有用于制造掩模的合适厚度，硅膜层具有合适的厚度作为掩模膜，并且是 低应力膜没有缺陷和优异的均匀性，涉及其成型方法。 SOI衬底是通过在第一硅晶片上形成氧化膜而获得的SOI晶片，通过氧化膜将第一硅晶片通过氢离子注入形成分离层，将第一硅晶片接合到第二硅晶片上， 并且在分离层处从第二硅晶片切割第一硅晶片，使得经由氧化膜在第二硅层上形成硅膜层。 形成SOI晶片的方法的特征在于包括使硅的外延生长在掺杂硼和磷中的一种或两种的同时在所述硅膜层上形成硅膜层的步骤。

    Etching method and photomask blank processing method
    10.
    发明授权
    Etching method and photomask blank processing method 有权
    蚀刻方法和光掩模坯料加工方法

    公开(公告)号：US08920666B2

    公开(公告)日：2014-12-30

    申请号：US12779998

    申请日：2010-05-14

    申请人： Shinichi Igarashi ,  Yukio Inazuki ,  Hideo Kaneko ,  Hiroki Yoshikawa ,  Yoshinori Kinase

    发明人： Shinichi Igarashi ,  Yukio Inazuki ,  Hideo Kaneko ,  Hiroki Yoshikawa ,  Yoshinori Kinase

    IPC分类号： C23F3/00 ,  G03F1/26 ,  H01L21/311 ,  G03F1/00 ,  G03F1/80 ,  G03F1/30 ,  G03F1/32

    CPC分类号： G03F1/26 ,  G03F1/14 ,  G03F1/30 ,  G03F1/32 ,  G03F1/80 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138

    摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.

    摘要翻译： 本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到 硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法 蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻 已经进行。