公开(公告)号：US09252793B2

公开(公告)日：2016-02-02

申请号：US13990030

申请日：2010-11-29

申请人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

发明人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

IPC分类号： H03L7/24 ,  H01L23/522 ,  H01L27/06 ,  H01L23/31 ,  H01L23/00

CPC分类号： H03B5/24 ,  H01L23/3107 ,  H01L23/5228 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L2224/05554 ,  H01L2224/06179 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01015 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  H03L7/24 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP1) having an oscillation circuit utilizing a reference resistor. The oscillation circuit generates a reference current by utilizing the reference resistor, a voltage is generated in accordance with this reference current and an oscillation frequency of the oscillation unit, and the oscillation unit oscillates at a frequency in accordance with the generated voltage. The reference resistor is formed of a plurality of resistors, which extend in a first (Y) direction orthogonal to a first side, inside a first region (RG1, RG2, RG3, and RG4) surrounded by the first side (S1, S2, S3, and S4) of a main surface of the semiconductor chip (CP1), a first line (42, 43, 44, and 45) connecting between one end of the first side and the center (CT1) of the main surface of the semiconductor chip, and a second line (42, 43, 44, and 45) connecting between the other end of the first side and the center of the main surface of the semiconductor chip.

公开(公告)号：US20130314165A1

公开(公告)日：2013-11-28

申请号：US13990030

申请日：2010-11-29

申请人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

发明人： Toshiaki Tsutsumi ,  Yoshihiro Funato ,  Tomonori Okudaira ,  Tadato Yamagata ,  Akihisa Uchida ,  Takeshi Terasaki ,  Tomohisa Suzuki ,  Yoshiharu Kanegae

IPC分类号： H03L7/24

CPC分类号： H03B5/24 ,  H01L23/3107 ,  H01L23/5228 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0629 ,  H01L28/20 ,  H01L28/24 ,  H01L2224/05554 ,  H01L2224/06179 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01015 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  H03L7/24 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device is formed by sealing, with a resin, a semiconductor chip (CP1) having an oscillation circuit utilizing a reference resistor. The oscillation circuit generates a reference current by utilizing the reference resistor, a voltage is generated in accordance with this reference current and an oscillation frequency of the oscillation unit, and the oscillation unit oscillates at a frequency in accordance with the generated voltage. The reference resistor is formed of a plurality of resistors, which extend in a first (Y) direction orthogonal to a first side, inside a first region (RG1, RG2, RG3, and RG4) surrounded by the first side (S1, S2, S3, and S4) of a main surface of the semiconductor chip (CP1), a first line (42, 43, 44, and 45) connecting between one end of the first side and the center (CT1) of the main surface of the semiconductor chip, and a second line (42, 43, 44, and 45) connecting between the other end of the first side and the center of the main surface of the semiconductor chip.

摘要翻译： 通过用树脂密封具有利用参考电阻器的振荡电路的半导体芯片（CP1）形成半导体器件。 振荡电路利用参考电阻产生参考电流，根据该参考电流产生电压和振荡单元的振荡频率，并且振荡单元根据所产生的电压以频率振荡。 参考电阻器由多个电阻器构成，该多个电阻器在与第一侧面正交的第一（Y）方向上在由第一侧（S1，S2，RG3，RG3和RG4）包围的第一区域（RG1，RG2， S3和S4），连接在第一侧的一端与第一侧的主表面的中心（CT1）之间的第一线（42,43,44和45） 半导体芯片和连接在第一侧的另一端和半导体芯片的主表面的中心之间的第二线（42,43,44和45）。