利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.026 秒)

    Display device
    1.
    发明申请
    Display device 审中-公开
    显示设备

    公开(公告)号：US20060275618A1

    公开(公告)日：2006-12-07

    申请号：US11431580

    申请日：2006-05-11

    申请人： Toshihiro Kugimiya ,  Katsufumi Tomihisa ,  Aya Hino ,  Katsutoshi Takagi

    发明人： Toshihiro Kugimiya ,  Katsufumi Tomihisa ,  Aya Hino ,  Katsutoshi Takagi

    IPC分类号： B32B15/04 ,  B32B9/00

    CPC分类号： G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458

    摘要： A display device in which interconnection—electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and/or Mg in a total amount from 0.1 to 3.0 at %, or Ni and/or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.

    摘要翻译： 一种显示装置，其中包括具有比Al合金低的电阻率的Cu合金膜和透明导电膜的互连电极不直接连接在难熔金属薄膜上，其中Cu合金膜含有Zn和/或Mg 总量为0.1〜3.0原子％，Ni和/或Mn总量为0.1〜5原子％，可以在Cu合金膜和透明电极之间以低电阻率直接连接而不使用阻挡金属 并且在应用的情况下例如向液晶显示器提供高显示质量。

    CU ALLOY WIRING FILM, TFT ELEMENT FOR FLAT-PANEL DISPLAY USING THE CU ALLOY WIRING FILM, AND CU ALLOY SPUTTERING TARGET FOR DEPOSITING THE CU ALLOY WIRING FILM
    6.
    发明申请
    CU ALLOY WIRING FILM, TFT ELEMENT FOR FLAT-PANEL DISPLAY USING THE CU ALLOY WIRING FILM, AND CU ALLOY SPUTTERING TARGET FOR DEPOSITING THE CU ALLOY WIRING FILM 有权
    CU合金线，用于使用铜合金线的平板显示器的TFT元件和用于沉积铜合金接线的CU合金溅射靶

    公开(公告)号：US20100012935A1

    公开(公告)日：2010-01-21

    申请号：US12517362

    申请日：2007-12-04

    申请人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

    发明人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

    IPC分类号： H01L29/786 ,  H01L23/48 ,  C23C14/34

    CPC分类号： H01L21/32051 ,  C22C9/00 ,  C22C9/06 ,  C23C14/3414 ,  G02F2001/136295 ,  G02F2202/28 ,  H01B1/026 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film.The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.

    摘要翻译： 本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险 玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。 本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。 布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

    Cu alloy wiring film, TFT element for flat-panel display using the Cu alloy wiring film, and Cu alloy sputtering target for depositing the Cu alloy wiring film
    7.
    发明授权
    Cu alloy wiring film, TFT element for flat-panel display using the Cu alloy wiring film, and Cu alloy sputtering target for depositing the Cu alloy wiring film 有权
    Cu合金布线膜，使用Cu合金布线膜的平板显示用TFT元件和Cu合金布线膜的Cu合金溅射靶

    公开(公告)号：US07994503B2

    公开(公告)日：2011-08-09

    申请号：US12517362

    申请日：2007-12-04

    申请人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

    发明人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

    IPC分类号： H01L29/04

    CPC分类号： H01L21/32051 ,  C22C9/00 ,  C22C9/06 ,  C23C14/3414 ,  G02F2001/136295 ,  G02F2202/28 ,  H01B1/026 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.

    摘要翻译： 本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险 玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。 本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。 布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

    Thin film transistor substrate and display device with oxygen-containing layer
    8.
    发明授权
    Thin film transistor substrate and display device with oxygen-containing layer 有权
    薄膜晶体管基板和含氧层的显示装置

    公开(公告)号：US07943933B2

    公开(公告)日：2011-05-17

    申请号：US12126527

    申请日：2008-05-23

    申请人： Aya Hino ,  Hiroshi Gotou

    发明人： Aya Hino ,  Hiroshi Gotou

    IPC分类号： H01L29/04

    CPC分类号： H01L27/124 ,  H01L29/458 ,  H01L29/4908

    摘要： Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.

    摘要翻译： 本文公开了尽管不存在通常插入在TFT中的源 - 漏电极和半导体层之间的阻挡金属层的表现出良好的特性的TFT基板。 TFT基板可以确保和直接连接TFT的半导体层。 薄膜晶体管基板具有基板，半导体层和源极 - 漏极电极。 源漏电极由含氧层和纯铜或铜合金薄膜构成。 含氧层含有氧，使得部分或全部氧与半导体层中的硅结合。 并且，纯铜或铜合金的薄膜通过含氧层与薄膜晶体管的半导体层连接。

    DISPLAY DEVICE
    9.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号：US20100163877A1

    公开(公告)日：2010-07-01

    申请号：US12376863

    申请日：2007-09-13

    申请人： Aya Hino ,  Hiroshi Gotou ,  Hiroyuki Okuno ,  Junichi Nakai

    发明人： Aya Hino ,  Hiroshi Gotou ,  Hiroyuki Okuno ,  Junichi Nakai

    IPC分类号： H01L33/42 ,  H01L33/16

    CPC分类号： G02F1/136286 ,  H01L23/53219 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.

    摘要翻译： 显示器具有设置有透明导电膜，薄膜晶体管和将薄膜晶体管电连接到透明导电膜的铝合金布线膜的玻璃基板。 铝合金布线膜是具有铝合金的第一层（X）的层叠结构，所述第一层（X）包含选自包含Ni和Ag的特定元素组Q中的至少一种元素，以及选自特定元素基团R中的至少一种元素，包括 含量在特定范围内的稀土元素和Mg，以及含有比第一层（X）的电阻率低的铝合金的第二层（Y）。 第一层（X）与透明导电膜直接接触。

    Thin film transistor substrate and display device
    10.
    发明授权
    Thin film transistor substrate and display device 有权
    薄膜晶体管基板和显示装置

    公开(公告)号：US07781767B2

    公开(公告)日：2010-08-24

    申请号：US11743916

    申请日：2007-05-03

    申请人： Nobuyuki Kawakami ,  Hiroshi Gotoh ,  Aya Hino

    发明人： Nobuyuki Kawakami ,  Hiroshi Gotoh ,  Aya Hino

    IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

    CPC分类号： H01L29/458 ,  H01L29/78609

    摘要： Disclosed are a thin film transistor substrate where barrier metal can be omitted to be formed between a semiconductor layer of a thin film transistor and source and drain electrodes (barrier metal need not be formed between the semiconductor layer of the thin film transistor and the source and drain electrodes), and a display device. (1) A thin film transistor substrate has a semiconductor layer of a thin film transistor, a source electrode, a drain electrode, and a transparent conductive film, wherein the substrate has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin film transistor, and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic percent, La of 0.1 to 1.0 atomic percent, and Si of 0.1 to 1.5 atomic percent. (2) A display device has the thin film transistor substrate.

    摘要翻译： 公开了一种薄膜晶体管基板，其中可以省略在薄膜晶体管的半导体层和源极和漏极之间形成阻挡金属（不需要在薄膜晶体管的半导体层和源极之间形成阻挡金属和在源极之间形成阻挡金属， 漏电极）和显示装置。 （1）薄膜晶体管基板具有薄膜晶体管，源电极，漏电极和透明导电膜的半导体层，其中，所述基板具有其中源电极和漏电极直接连接到 薄膜晶体管的半导体层，源极和漏极包括含有0.1至6.0原子％的Ni，0.1至1.0原子％的La和0.1至1.5原子％的Si的Al合金薄膜。 （2）显示装置具有薄膜晶体管基板。