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公开(公告)号：US20060275618A1
公开(公告)日：2006-12-07
申请号：US11431580
申请日：2006-05-11
CPC分类号： G02F1/136286 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A display device in which interconnection—electrode comprising a Cu alloy film having a lower electrical resistivity than Al alloy and a transparent conductive film are directly connected not by way of a refractory metal thin film, wherein the Cu alloy film contains Zn and/or Mg in a total amount from 0.1 to 3.0 at %, or Ni and/or Mn in a total amount from 0.1 to 5 at %, thereby enabling the direct connection at low resistivity between the Cu alloy film and the transparent electrode without using a barrier metal, and giving high display quality in a case of application, for example, to a liquid crystal display.
摘要翻译： 一种显示装置，其中包括具有比Al合金低的电阻率的Cu合金膜和透明导电膜的互连电极不直接连接在难熔金属薄膜上，其中Cu合金膜含有Zn和/或Mg 总量为0.1〜3.0原子％，Ni和/或Mn总量为0.1〜5原子％，可以在Cu合金膜和透明电极之间以低电阻率直接连接而不使用阻挡金属 并且在应用的情况下例如向液晶显示器提供高显示质量。
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2.发明授权Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权源极/漏极，薄膜晶体管基板，其制造方法和显示装置公开(公告)号：US07411298B2
公开(公告)日：2008-08-12
申请号：US11461907
申请日：2006-08-02
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译： 在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。 源极/漏极包括含氮层和纯铝或铝合金薄膜。 含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。
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3.发明申请Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权源极/漏极，薄膜晶体管基板，其制造方法和显示装置公开(公告)号：US20070040172A1
公开(公告)日：2007-02-22
申请号：US11461907
申请日：2006-08-02
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L27/124 , H01L29/458 , H01L29/66765
摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要翻译： 在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。 源极/漏极包括含氮层和纯铝或铝合金薄膜。 含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。
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4.发明申请Copper alloy thin films, copper alloy sputtering targets and flat panel displays 审中-公开铜合金薄膜，铜合金溅射靶和平板显示器公开(公告)号：US20060091792A1
公开(公告)日：2006-05-04
申请号：US11235196
申请日：2005-09-27
CPC分类号： H01L23/53233 , C23C14/185 , G02F2001/136295 , H01J29/02 , H01J2211/225 , H01L27/124 , H01L2924/0002 , Y10T428/31678 , H01L2924/00
摘要： A Cu alloy thin film contains Fe and P with the balance being substantially Cu, in which the contents of Fe and P satisfy all the following conditions (1) to (3), and in which Fe2P is precipitated at grain boundaries of Cu after heat treatment at 200° C. to 500° C. for 1 to 120 minutes: 1.4NFe+8NP 1.0 (2) 12NFe+NP>0.5 (3) wherein NFe represents the content of Fe (atomic percent); and NP represents the content of P (atomic percent).
摘要翻译： Cu合金薄膜含有Fe和P，余量基本上为Cu，其中Fe和P的含量满足以下所有条件（1）至（3），其中Fe 2 P 在200℃至500℃热处理1〜120分钟后，在Cu的晶界处析出：<？在线公式描述=“在线公式”末端=“铅”→> 1.4N ＆lt;＆lt;＆lt;＆lt;＆lt;＆lt; 3＆gt;＆lt; 1.3（1）＆lt; -formulae description =“In-line Formulas”end =“lead”？> N＆lt;＆lt;＆lt;＆lt;＆lt; P＆lt; “In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 12N + N > 0.5（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N Fe表示Fe含量（原子百分数） ; N P表示P（原子百分比）的含量。
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5.发明申请Ag-base interconnecting film for flat panel display, Ag-base sputtering target and flat panel display 审中-公开用于平板显示器的Ag基互连膜，Ag基溅射靶和平板显示器公开(公告)号：US20050153162A1
公开(公告)日：2005-07-14
申请号：US10999027
申请日：2004-11-30
CPC分类号： C22C5/06 , C23C14/185 , C23C14/3414 , Y10T428/12896
摘要： An active matrix flat panel display includes pixels, TFTs for driving the pixels, and interconnecting lines connected to the TFTs. The interconnecting lines are formed by processing an interconnecting film of an Ag-base alloy containing 0.1 to 4.0 at % Nd and/or 0.01 to 1.5 at % Bi, and Ag as the remainder or an Ag-base alloy containing, in addition to Nd and/or Bi, one or some of elements including Cu, Au and Pd in a content in the range of 0.01 to 1.5 at %.
摘要翻译： 有源矩阵平板显示器包括像素，用于驱动像素的TFT和连接到TFT的互连线。 互连线通过加工含有0.1〜4.0at％的Nd和/或0.01〜1.5at％的Bi和Ag作为余量的Ag基合金的互连膜或除了Nd之外还含有Ag基合金 和/或Bi，包含Cu，Au和Pd中的一种或一些元素，其含量范围为0.01至1.5at％。
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公开(公告)号：US20060226005A1
公开(公告)日：2006-10-12
申请号：US11377266
申请日：2006-03-17
IPC分类号： C23C14/00
CPC分类号： H01J37/3429 , C23C14/3414
摘要： An Al-based sputtering target mainly containing Al has a total number of concave defects having largest depths of 0.2 μm or more and equivalent area diameters of 0.2 μm or more of 45000 or less per square millimeter of unit surface area of a surface of the sputtering target corresponding to a sputtering plane. Another Al-based sputtering target has a total number of concave defects having largest depths of 0.1 μm or more and equivalent area diameters of 0.5 μm or more of 15000 or less per square millimeter of unit surface area on the surface. These sputtering targets are reduced in time period and number of sputtering failures (a splash and/or an arc) occurring in their use, particularly at an early stage of their use.
摘要翻译： 主要含有Al的Al基溅射靶具有溅射表面的每平方毫米单位表面积的最大深度为0.2μm以上，等效面积直径为0.2μm以上45000以下的凹陷缺陷的总数 靶对应于溅射平面。 另一Al基溅射靶具有表面上每平方毫米单位表面积最大深度为0.1μm或更大，等效面积直径为0.5μm或更大为15000或更小的凹陷缺陷总数。 这些溅射靶在其使用中发生的时间和溅射失败次数（飞溅和/或电弧）减少，特别是在其使用的早期阶段。
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公开(公告)号：US07154180B2
公开(公告)日：2006-12-26
申请号：US11106439
申请日：2005-04-15
CPC分类号： H01L29/66757 , C23C14/185 , C23C14/3414 , G02F1/133553 , H01L27/124 , H01L27/1255 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , Y10T428/12 , H01L2924/00
摘要： In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.
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公开(公告)号：US08350303B2
公开(公告)日：2013-01-08
申请号：US13286284
申请日：2011-11-01
IPC分类号： H01L27/085
CPC分类号： H01L29/458 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/4908 , H01L2224/73204
摘要： A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.
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公开(公告)号：US20090134393A1
公开(公告)日：2009-05-28
申请号：US12090883
申请日：2006-12-01
IPC分类号： H01L33/00
CPC分类号： H01L27/124 , G02F2001/136295 , H01L29/458 , H01L29/4908
摘要： A thin-film transistor substrate in which an aluminum alloy film composing a source/drain wiring is directly connected with a transparent electrode. The thin-film transistor substrate includes a gate wiring, and source wiring and drain wiring, the gate wiring and the source and drain wiring being arranged orthogonally to each other. The single-layer aluminum alloy film composing the gate wiring and the single-layer aluminum alloy film composing the source wiring and the drain wiring are the same in composition. Furthermore, display devices can be mounted with the above thin-film transistor substrates.
摘要翻译： 其中构成源极/漏极布线的铝合金膜与透明电极直接连接的薄膜晶体管基板。 薄膜晶体管基板包括栅极布线，源极布线和漏极布线，栅极布线和源极和漏极布线彼此正交布置。 构成栅极布线的单层铝合金膜和构成源极布线和漏极布线的单层铝合金膜的组成相同。 此外，显示装置可以安装有上述薄膜晶体管基板。
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公开(公告)号：US20050224795A1
公开(公告)日：2005-10-13
申请号：US11091442
申请日：2005-03-29
IPC分类号： G02F1/1343 , G02F1/133 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/027 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L27/12 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , H01L27/124
摘要： A display device includes an insulating substrate, a thin-film transistor arranged on the insulating substrate, a pixel electrode including a transparent electrode, and an aluminum alloy film as a connection wiring section for electrically connecting between the thin-film transistor and the pixel electrode. The aluminum alloy film is a multilayer aluminum alloy film including an aluminum alloy layer containing no nitrogen, and another aluminum alloy layer being arranged on the first layer and containing nitrogen. The nitrogen-containing layer ensures corrosion resistance against an alkaline solution. The nitrogen-containing aluminum alloy layer has been removed at least in a connection area with the pixel electrode so as to allow the pixel electrode to be directly connected to the first aluminum alloy layer.
摘要翻译： 显示装置包括绝缘基板，布置在绝缘基板上的薄膜晶体管，包括透明电极的像素电极和作为用于电连接薄膜晶体管和像素电极的连接布线部分的铝合金膜 。 铝合金膜是包括不含氮的铝合金层的多层铝合金膜，另一铝合金层设置在第一层上并含有氮。 含氮层确保了对碱性溶液的耐腐蚀性。 至少在与像素电极的连接区域中除去含氮铝合金层，以使像素电极直接连接到第一铝合金层。
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