公开(公告)号：US5611685A

公开(公告)日：1997-03-18

申请号：US450758

申请日：1995-05-25

申请人： Toshihiro Nakajima ,  Takatoshi Chiba ,  Kiyofumi Nishii ,  Toru Sato

发明人： Toshihiro Nakajima ,  Takatoshi Chiba ,  Kiyofumi Nishii ,  Toru Sato

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  H01L21/00 ,  H01L21/205 ,  H01L21/26 ,  H01L21/324 ,  F27B5/04

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/4412 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14

摘要： A substrate heat treatment apparatus includes a heat treatment furnace of a flat configuration, and having a cavity in which a substrate is accommodated. The heat treatment furnace includes a gas supply unit at one side end face, an opening for communication between the cavity and the outside world, and a gas discharge unit in the vicinity of the opening for discharging gas from the cavity at the other side end face. The heat treatment furnace further includes a cover for shutting the opening allowing opening/closing thereof. In the gas exhaust unit, an exhaust chamber is formed on the other side end face along the opening with a partition wall between the opening and the exhaust chamber. An exhaust portion is formed in communication with the outside world in the exhaust chamber. The partition wall is formed so that the edge of the partition wall is displaced away from the inside surface of the cover, whereby a slit-like vent passage extending in the direction of the width of the cavity is formed between the cover and the edge of the partition wall when the opening is shut. The gas flow is uniform in the vicinity of the vent passage when a substrate is loaded/unloaded into and/from the heat treatment furnace, and also during heat treatment. The outside air will not enter the furnace, and no stagnation of the process gas occurs in the furnace.

摘要翻译： 基板热处理装置包括平坦构造的热处理炉，并且具有容纳基板的空腔。 所述热处理炉包括在一侧端面处的气体供给单元，所述空腔与所述外界之间连通的开口以及所述开口附近的气体排出单元，用于从所述另一侧端面处的所述空腔排出气体 。 热处理炉还包括用于关闭允许其打开/关闭的开口的盖。 在排气单元中，在开口与排气室之间具有分隔壁的沿着开口的另一侧端面形成有排气室。 在排气室中形成与外界连通的排气部。 分隔壁形成为使得隔壁的边缘远离盖的内表面移开，从而在盖和盖的边缘之间形成沿空腔宽度方向延伸的狭缝状通气通道 打开关闭时的隔墙。 当将基板装载/卸载到热处理炉中时，以及在热处理期间，气流在通气通道附近均匀。 外部空气不会进入炉内，炉内不会发生停滞。

公开(公告)号：US5405446A

公开(公告)日：1995-04-11

申请号：US272486

申请日：1994-07-11

申请人： Toshihiro Nakajima ,  Takatoshi Chiba ,  Kiyofumi Nishii ,  Toru Sato

发明人： Toshihiro Nakajima ,  Takatoshi Chiba ,  Kiyofumi Nishii ,  Toru Sato

IPC分类号： H01L21/26 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B31/16 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/31 ,  H01L21/324 ,  C23C16/00

CPC分类号： C23C16/45504 ,  C23C16/45512 ,  C23C16/4558 ,  C30B25/14 ,  C30B31/16 ,  H01L21/67109

摘要： An apparatus for heat processing a substrate includes a heat processing furnace, which has a flat inner space for accommodating the substrate, and a gas introduction unit which introduces gas supplied via a piping into the inner space of the heat processing furnace via a gas supply inlet of the heat processing furnace. The apparatus effects the heat processing on the substrate placed within a gas flow formed in the inner space. The gas introduction unit includes a first gas introduction chamber, which receives the gas supplied via the piping for reducing a flow velocity of the gas, and a second gas introduction chamber, which is in communication with the first gas introduction chamber, is formed over at least one of outer surfaces of the top furnace wall and the bottom furnace wall at the one end of the heat processing furnace, and extends in a belt-like form through an entire width of the heat processing furnace. A portion of the top furnace wall and/or bottom furnace wall, over which the second gas introduction chamber is formed, has a nozzle opening, which covers the entire width of the heat processing furnace for flowing the gas from the second gas introduction chamber into the inner space in a direction perpendicular to the top furnace wall and/or bottom furnace wall. The gas supply port and the first gas introduction chamber are preferably separated from each other by a partition which forms a portion of a cylindrical or spherical surface and has a plurality of through-holes.

摘要翻译： 一种用于加热基板的设备包括：热处理炉，其具有用于容纳基板的平坦内部空间;以及气体引入单元，其经由管道供给的气体经由气体供给入口引入到热处理炉的内部空间 的热处理炉。 该装置对放置在内部空间中形成的气流内的基板进行热处理。 气体引入单元包括：第一气体导入室，其接收经由管道供给的气体，用于降低气体的流速;以及与第一气体导入室连通的第二气体导入室，形成在 在热处理炉的一端的顶炉壁和底炉壁的至少一个外表面，并且以带状形式延伸通过热处理炉的整个宽度。 顶部炉壁和/或底部炉壁的形成有第二气体导入室的部分具有喷嘴开口，该喷嘴开口覆盖用于使气体从第二气体导入室流出的热处理炉的整个宽度进入 在垂直于顶部炉壁和/或底部炉壁的方向上的内部空间。 气体供给口和第一气体导入室优选通过形成圆筒状或球面的一部分并具有多个通孔的隔壁相互分离。

公开(公告)号：US5315092A

公开(公告)日：1994-05-24

申请号：US774943

申请日：1991-10-11

申请人： Mitsukazu Takahashi ,  Takatoshi Chiba ,  Kiyofumi Nishii

发明人： Mitsukazu Takahashi ,  Takatoshi Chiba ,  Kiyofumi Nishii

IPC分类号： H01L21/66 ,  H01L21/00 ,  H01L21/26 ,  H05B1/02 ,  H01L21/02

CPC分类号： H01L21/67115

摘要： A temperature measuring device for measuring the temperature of a wafer heated by light irradiation includes: a sheath thermocouple for detecting the temperature of a wafer to be measured by contacting the wafer to be measured; and a covering member for covering the surface of the sheath thermocouple. The surface of the covering member is flat in a predetermined region, and the part in the region can plane-contact the surface of the wafer. Thus, the temperature of the wafer can be measured accurately and in a stable manner, and the wafer surface is free from contamination with adhesives or the metal of the thermocouple.

摘要翻译： 用于测量通过光照射加热的晶片的温度的温度测量装置包括：鞘热电偶，用于通过接触被测量的晶片来检测要测量的晶片的温度; 以及用于覆盖护套热电偶的表面的覆盖部件。 覆盖部件的表面在预定区域中是平坦的，并且该区域中的部分可以与晶片的表面平面接触。 因此，能够以稳定的方式精确地测量晶片的温度，并且晶片表面没有被粘合剂或热电偶的金属污染。