Photoresist residue remover composition and semiconductor circuit element production process employing the same
    5.
    发明授权
    Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效
    光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法

    公开(公告)号:US07816313B2

    公开(公告)日:2010-10-19

    申请号:US12082173

    申请日:2008-04-08

    IPC分类号: H01L21/02

    摘要: A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

    摘要翻译: 提供了一种光致抗蚀剂残渣去除剂组合物,其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣,在基板表面上形成任何这些铝,铜,钨和任何这些的合金的任何金属的布线 金属作为主要成分,该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法,其中在以任何这些金属为主要成分的铝,铜,钨和任何金属的任何金属的布线形成步骤中,使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

    Photoresist residue remover composition and semiconductor circuit element production process employing the same
    8.
    发明申请
    Photoresist residue remover composition and semiconductor circuit element production process employing the same 失效
    光致抗蚀剂残渣去除剂组合物和采用其的半导体电路元件生产方法

    公开(公告)号:US20080318424A1

    公开(公告)日:2008-12-25

    申请号:US12082173

    申请日:2008-04-08

    IPC分类号: H01L21/44

    摘要: A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

    摘要翻译: 提供了一种光致抗蚀剂残渣去除剂组合物,其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣,在基板表面上形成任何这些铝,铜,钨和任何这些的合金的任何金属的布线 金属作为主要成分,该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法,其中在以任何这些金属为主要成分的铝,铜,钨和任何金属的任何金属的布线形成步骤中,使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

    Lubricant composition, bearing apparatus, sliding member and triazine-ring compound
    10.
    发明申请
    Lubricant composition, bearing apparatus, sliding member and triazine-ring compound 审中-公开
    润滑剂组合物,轴承装置,滑动构件和三嗪环化合物

    公开(公告)号:US20070054814A1

    公开(公告)日:2007-03-08

    申请号:US11512084

    申请日:2006-08-30

    IPC分类号: C07D251/54

    CPC分类号: C07D251/54

    摘要: The novel lubricant composition is disclosed. The composition comprises at least one compound, exhibiting a minimum friction coefficient under a pressure equal to or greater than 10 MPa with the increase of a pressure and a viscosity-pressure coefficient equal to or less than 20 GPa−1 at 40° C., represented by a formula (1). In the formula, Y and Z respectively represent a single bond or a bivalent linking group selected from the group consisting of NRa where Ra is a hydrogen atom or a C1-30 alkyl group, oxygen, sulfur, carbonyl, sulfonyl and any combinations thereof; A and B respectively represent a substituted or non-substituted, alkyl group, alkenyl group, alkynyl group, aryl group or heterocyclic group; T is —S—R1, —O—R2 or —NR3R4; and R1, R2, R3 and R4 respectively represent a substituted or non-substituted, alkyl group, alkenyl group, alkynyl group, aryl group or heterocyclic group.

    摘要翻译: 公开了新的润滑剂组合物。 该组合物包含至少一种化合物,在压力等于或大于10MPa的压力和粘度压力系数等于或小于20GPa -1的情况下表现出最小的摩擦系数。 > 40℃,由式(1)表示。 在该式中,Y和Z分别表示单键或选自NR a的二价连接基团,其中R a是氢原子或C 1 -C 30烷基,氧,硫, 羰基,磺酰基及其任何组合; A和B分别表示取代或未取代的烷基,烯基,炔基,芳基或杂环基; T是-S-R 1,-O-R 2或-NR 3 R 4; R 1,R 2,R 3和R 4分别表示取代或未取代的烷基 烯基,炔基,芳基或杂环基。