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    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    3.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090190270A1

    公开(公告)日：2009-07-30

    申请号：US12022538

    申请日：2008-01-30

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

    MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    5.
    发明申请
    MAGNETORESISTIVE DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权

    公开(公告)号：US20090290264A1

    公开(公告)日：2009-11-26

    申请号：US12126567

    申请日：2008-05-23

    申请人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    发明人： Toshiyuki Ayukawa ,  Takahiko Machita ,  Daisuke Miyauchi ,  Tsutomu Chou ,  Koji Shimazawa ,  Shinji Hara ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： The invention provides a magnetoresistive device of the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first, substantially soft magnetic shield layer positioned below and a second, substantially soft magnetic shield layer positioned above, which are located and formed such that the magnetoresistive effect is sandwiched between them from above and below, with a sense current applied in the stacking direction. The magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that said nonmagnetic intermediate layer is sandwiched between them. At least one of the first shield layer positioned below and the second shield layer positioned above is configured in a framework form having a planar shape (X-Y plane) defined by the width and length directions of the device. The framework has a front frame-constituting portion located on a medium opposite plane side in front and near where the magnetoresistive unit is positioned, and any other frame portion. The any other frame portion partially comprises a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The bias magnetic field-applying layer is constructed by repeating the stacking of a multilayer unit at least twice or up to 50 times, wherein the multilayer unit comprises a nonmagnetic underlay layer and a high-coercive material layer. The nonmagnetic gap layer is designed and located such that a magnetic flux given out of the bias magnetic field-applying layer is efficiently sent out to the front frame-constituting portion. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with a magnetic flux going all the way around the framework, and turns the magnetization of the front frame-constituting portion into a single domain. It is thus possible to make the domain control of the shield layers much more stable, achieve remarkable improvements in resistance to an external magnetic field, and make the operation of the device much more reliable.

    Magnetic field detecting element including tri-layer stack with stepped portion
    6.
    发明授权
    Magnetic field detecting element including tri-layer stack with stepped portion 有权
    磁场检测元件包括具有阶梯部分的三层叠层

    公开(公告)号：US08149546B2

    公开(公告)日：2012-04-03

    申请号：US11925030

    申请日：2007-10-26

    申请人： Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Takahiko Machita

    发明人： Toshiyuki Ayukawa ,  Daisuke Miyauchi ,  Koji Shimazawa ,  Takahiko Machita

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

    摘要： A magnetic field detecting element comprises a stack including upper and lower magnetic layers, and a non-magnetic intermediate layer sandwiched therebetween, wherein magnetization of the magnetic layers changes in accordance with an external magnetic field; upper and lower shield electrode layers sandwiching the stack in a direction of stacking, wherein the upper and lower shield electrode layers supply sense current in the direction of stacking, and magnetically shield the stack; a bias magnetic layer provided on a surface of the stack opposite to an air bearing surface, and wherein the bias magnetic layer applies a bias magnetic field to the upper and lower magnetic layers in a direction perpendicular to the air bearing surface; and insulating layers provided on both sides of the stack in a track width direction thereof, wherein the stack has a stepped portion formed at the non-magnetic intermediate layer.

    摘要翻译： 磁场检测元件包括包括上下磁性层的堆叠和夹在其间的非磁性中间层，其中磁性层的磁化根据外部磁场而变化; 上下屏蔽电极层沿层叠方向夹着堆叠，其中上下屏蔽电极层在堆叠方向上提供感测电流，并对堆叠进行磁屏蔽; 偏置磁性层，其设置在与空气轴承表面相对的所述堆叠的表面上，并且其中所述偏置磁性层在垂直于所述空气轴承表面的方向上向所述上部和下部磁性层施加偏置磁场; 以及设置在堆叠的轨道宽度方向两侧的绝缘层，其中堆叠具有形成在非磁性中间层的台阶部分。

    Magnetoresistive device of the CPP type, and magnetic disk system
    9.
    发明授权
    Magnetoresistive device of the CPP type, and magnetic disk system 有权
    CPP型磁阻器和磁盘系统

    公开(公告)号：US07881023B2

    公开(公告)日：2011-02-01

    申请号：US12019202

    申请日：2008-01-24

    申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

    发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/398 ,  H01L43/08

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched between them, with a sense current applied in a stacking direction, wherein the magnetoresistive unit comprises a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed such that the nonmagnetic intermediate layer is interposed between them, wherein the first shield layer, and the second shield layer is controlled by magnetization direction control means in terms of magnetization direction, and the first ferromagnetic layer, and the second ferromagnetic layer receives action such that there is an antiparallel magnetization state created, in which mutual magnetizations are in opposite directions, under the influences of magnetic actions of the first shield layer and the second shield layer.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括磁阻单元，以及位于并形成第一屏蔽层和第二屏蔽层，使得磁阻单元夹在它们之间，并施加感应电流 在叠层方向上，其中所述磁阻单元包括非磁性中间层，以及堆叠并形成所述非磁性中间层的第一铁磁层和第二铁磁层，其中所述第一屏蔽层和所述第二屏蔽层 在磁化方向上由磁化方向控制装置控制，并且第一铁磁层和第二铁磁层受到磁力的影响而产生相互磁化相反方向产生的反平行磁化状态的动作 第一屏蔽层的动作和 第二屏蔽层。

    Magnetoresistive device of the CPP type, and magnetic disk system
    10.
    发明授权
    Magnetoresistive device of the CPP type, and magnetic disk system 有权
    CPP型磁阻器和磁盘系统

    公开(公告)号：US07876535B2

    公开(公告)日：2011-01-25

    申请号：US12019205

    申请日：2008-01-24

    申请人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

    发明人： Takahiko Machita ,  Koji Shimazawa ,  Daisuke Miyauchi ,  Tsutomu Chou

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A magnetoresistive device of a CPP (current perpendicular to plane) structure includes a magnetoresistive unit sandwiched between a first substantially soft magnetic shield layer from below, and a second substantially soft magnetic shield layer from above, with a sense current applied in a stacking direction. The magnetoresistive unit includes a non-magnetic intermediate layer sandwiched between a first ferromagnetic layer, and a second ferromagnetic layer. At least one of the first and second shield layers is configured in a window frame of a planar shape, including a front frame-constituting portion and a back frame-constituting portion partially comprising a combination of a nonmagnetic gap layer with a bias magnetic field-applying layer. The combination of the nonmagnetic gap layer with the bias magnetic field-applying layer forms a closed magnetic path with magnetic flux going all the way around the window framework, turning the magnetization of the front frame-constituting portion into a single domain.

    摘要翻译： CPP（电流垂直于平面）结构的磁阻器件包括夹在下面的第一基本上软磁屏蔽层和从上方的第二基本软磁屏蔽层之间的磁阻单元，其中沿堆叠方向施加感测电流。 磁阻单元包括夹在第一铁磁层和第二铁磁层之间的非磁性中间层。 第一屏蔽层和第二屏蔽层中的至少一个被配置在平面形状的窗框中，包括前框架构成部分和后框架构成部分，部分地包括具有偏磁场的非磁性间隙层的组合， 应用层。 非磁性间隙层与偏置磁场施加层的组合形成闭合的磁路，其中磁通量一直围绕窗框架，将前框架构成部分的磁化转变为单个畴。