摘要:
A nonvolatile memory device (101) includes a plurality of physical blocks, each of which is provide with a nonvolatile memory (103), a logic/physical address conversion table, a temporary block and a temporary table. The nonvolatile memory (103) includes a plurality of pages which are predetermined writing units, respectively. The logical-physical address conversion table (106) stores correspondence information between logic addresses and physical addresses of data to be stored in the physical blocks. The temporary block is a physical block to store data that are smaller in size than those of the page. The temporary table (107) stores correspondence information between logic addresses and physical addresses with respect to data to be stored in the temporary block.
摘要:
A nonvolatile memory device (101) includes a plurality of physical blocks, each of which is provide with a nonvolatile memory (103), a logic/physical address conversion table, a temporary block and a temporary table. The nonvolatile memory (103) includes a plurality of pages which are predetermined writing units, respectively. The logical-physical address conversion table (106) stores correspondence information between logic addresses and physical addresses of data to be stored in the physical blocks. The temporary block is a physical block to store data that are smaller in size than those of the page. The temporary table (107) stores correspondence information between logic addresses and physical addresses with respect to data to be stored in the temporary block.
摘要:
It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.
摘要:
It is possible to accurately detect a physical block which has caused a fixture defect in a flash memory so as to limit the use of the physical block. By recording a history of generation of a physical block error and a history of physical erasing in an ECC error record, it is judged whether the error which has occurred is accidental or caused by a fixture defect. When no error is caused in the data written by physical erasing after a first read error occurrence, the first error is accidental and if another error is caused, the error is judged to be caused by a fixture defect. By using such an ECC error record, it is possible to accurately judge whether the error is accidental or caused by a fixture defect. By eliminating use of the physical block judged to have a fixture defect, it is possible to reduce read errors.
摘要:
A flash memory system is disclosed. The flash memory system includes a flash memory comprising more than one physical block and more than one page, where each page can be in an enabled state, a blank state or a disabled state. In use, a merge control section reads data on an enabled page from a predetermined physical block using a read section, and writes the data onto a blank page using a write section, thereby copying the data on the enabled page onto the blank page. A merge control section then disables the enabled page using a page-disabling section. When the copying of the data from all the enabled pages in the predetermined physical block is finished, the merge control section collectively erases all the data in the physical block using an erase section.
摘要:
Provided is a method that, in the case of managing areas of a non-volatile memory of an information recording module by a file system, increases the speed of processing for writing file data and file system management information, and furthermore prevents a decrease in the rewriting lifetime of the non-volatile memory. The information recording module (2) is provided with a page cache control unit (217) that stores page cache information (224) in the non-volatile memory (22) of the information recording module (2) and performs control such that a specific physical block is used as a cache when writing small-sized data. Also, an access module (1) is provided with a page cache information setting unit (104) that sets information necessary for page cache control in the information recording module (2). The combination of the access module (1) and the information recording module (2) prevents the execution of needless saving process with use of page caching when writing small-sized data, thereby increasing the speed of writing processing.
摘要:
Provided is a method that, in the case of managing areas of a non-volatile memory of an information recording module by a file system, increases the speed of processing for writing file data and file system management information, and furthermore prevents a decrease in the rewriting lifetime of the non-volatile memory. The information recording module (2) is provided with a page cache control unit (217) that stores page cache information (224) in the non-volatile memory (22) of the information recording module (2) and performs control such that a specific physical block is used as a cache when writing small-sized data. Also, an access module (1) is provided with a page cache information setting unit (104) that sets information necessary for page cache control in the information recording module (2). The combination of the access module (1) and the information recording module (2) prevents the execution of needless saving process with use of page caching when writing small-sized data, thereby increasing the speed of writing processing.
摘要:
A file system (105) and a nonvolatile memory device (101) notify each other of the cluster size and the logic block size respectively in advance. In writing, the file system notifies the nonvolatile memory device of data as to which cluster of the file system can be discarded in the logical block of the nonvolatile memory device. With this, the nonvolatile memory device can avoid the copy of data at the writing, so that the nonvolatile memory device is not required to continuously keep data of an unnecessary file.
摘要:
A control method of nonvolatile memory is provided, wherein it does not happen that data which ought to have been erased are not erased, or data which ought to have been written are lost even if a forced interruption takes place due to shutdown of a power source for a memory device, a reset command, or the like occurs when data are written in a last page of a block, the block is validated by setting the block data validation flag provided in the redundant area of the last page of block 0 (valid). Furthermore, a counter judges whether the data is new or old, and data can be protected even if the above-mentioned solution cannot be implemented.