利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

98 条记录 (耗时 0.022 秒)

    Proton conducting membrane and method for producing proton conducting membrane
    3.
    发明授权
    Proton conducting membrane and method for producing proton conducting membrane 有权
    质子导电膜及其制造方法

    公开(公告)号：US08398754B2

    公开(公告)日：2013-03-19

    申请号：US12680174

    申请日：2008-09-25

    申请人： Toyoki Kunitake ,  Yuanzhi Li ,  Yoshitaka Aoki ,  Emi Muto

    发明人： Toyoki Kunitake ,  Yuanzhi Li ,  Yoshitaka Aoki ,  Emi Muto

    IPC分类号： B01D53/22

    CPC分类号： H01M8/1016 ,  B01D67/0048 ,  B01D71/024 ,  B01D2325/14 ,  C04B35/486 ,  C04B35/624 ,  C04B2235/3225 ,  C04B2235/421 ,  C04B2235/441 ,  C04B2235/447 ,  C04B2235/448 ,  C04B2235/449 ,  H01M8/1246 ,  H01M2300/0071 ,  H01M2300/0074 ,  Y02E60/525 ,  Y02P70/56

    摘要： A proton conducting membrane comprising, as a main component, a ceramic structure in which an oxygen atom of a metal oxide is bonded through the oxygen atom with at least one group derived an oxygen acid selected from —B(O)3—, —S(═O)2(O)2—, —P(═O)(O)3—, —C(═O)(O)2—, and —N(O)3—, wherein the metal oxide and said at least one group derived from the oxygen acid share the oxygen atom, the proton conducting membrane being made by a sol-gel reaction of the oxygen acid or its precursor and a precursor of the metal oxide in order to obtain a sol-gel reaction product, followed by heating of the sol-gel reaction product at a temperature in a range of 100° C. to 600° C., the oxygen acid or its precursor being selected from a boric acid, a sulfuric acid, a phosphoric acid, a carbonic acid, a nitric acid, and precursors thereof. Thus, a novel proton conducting membrane is provided.

    摘要翻译： 一种质子传导膜，其以主要成分为主成分，其中金属氧化物的氧原子通过氧原子与至少一个衍生自选自-B（O）3 - ，-S （ΟO）2（O）2 - ， - （O）（O）3 - ， - C（= O）（O）2 - 和-N（O）3 - ，其中金属氧化物和 由氧原子衍生的至少一个共享氧原子，质子传导膜通过氧酸或其前体与金属氧化物的前体的溶胶 - 凝胶反应制成，以获得溶胶 - 凝胶反应产物 ，然后在100℃至600℃的温度范围内加热溶胶 - 凝胶反应产物，氧酸或其前体选自硼酸，硫酸，磷酸， 碳酸，硝酸及其前体。 因此，提供了一种新颖的质子传导膜。

    PROTON CONDUCTING MEMBRANE AND METHOD FOR PRODUCING PROTON CONDUCTING MEMBRANE
    4.
    发明申请
    PROTON CONDUCTING MEMBRANE AND METHOD FOR PRODUCING PROTON CONDUCTING MEMBRANE 有权
    原子导电膜及其制造方法

    公开(公告)号：US20100284880A1

    公开(公告)日：2010-11-11

    申请号：US12680174

    申请日：2008-09-25

    申请人： Toyoki Kunitake ,  Yuanzhi Li ,  Yoshitaka Aoki ,  Emi Muto

    发明人： Toyoki Kunitake ,  Yuanzhi Li ,  Yoshitaka Aoki ,  Emi Muto

    IPC分类号： C01B17/00 ,  C01B15/16 ,  C01F17/00

    CPC分类号： H01M8/1016 ,  B01D67/0048 ,  B01D71/024 ,  B01D2325/14 ,  C04B35/486 ,  C04B35/624 ,  C04B2235/3225 ,  C04B2235/421 ,  C04B2235/441 ,  C04B2235/447 ,  C04B2235/448 ,  C04B2235/449 ,  H01M8/1246 ,  H01M2300/0071 ,  H01M2300/0074 ,  Y02E60/525 ,  Y02P70/56

    摘要： A proton conducting membrane comprising, as a main component, a ceramic structure in which an oxygen atom of a metal oxide is bonded through the oxygen atom with at least one group derived an oxygen acid selected from —B(O)3—, —S(═O)2(O)2—, —P(═O)(O)3—, —C(═O)(O)2—, and —N(O)3—, wherein the metal oxide and said at least one group derived from the oxygen acid share the oxygen atom, the proton conducting membrane being made by a sol-gel reaction of the oxygen acid or its precursor and a precursor of the metal oxide in order to obtain a sol-gel reaction product, followed by heating of the sol-gel reaction product at a temperature in a range of 100° C. to 600° C., the oxygen acid or its precursor being selected from a boric acid, a sulfuric acid, a phosphoric acid, a carbonic acid, a nitric acid, and precursors thereof. Thus, a novel proton conducting membrane is provided.

    摘要翻译： 一种质子传导膜，其以主要成分为主成分，其中金属氧化物的氧原子通过氧原子与至少一个衍生自选自-B（O）3 - ，-S （ΟO）2（O）2 - ， - （O）（O）3 - ， - C（= O）（O）2 - 和-N（O）3 - ，其中金属氧化物和 由氧原子衍生的至少一个共享氧原子，质子传导膜通过氧酸或其前体与金属氧化物的前体的溶胶 - 凝胶反应制成，以获得溶胶 - 凝胶反应产物 ，然后在100℃至600℃的温度范围内加热溶胶 - 凝胶反应产物，氧酸或其前体选自硼酸，硫酸，磷酸， 碳酸，硝酸及其前体。 因此，提供了一种新颖的质子传导膜。

    Process for producing dielectric insulating thin film, and dielectric insulating material
    5.
    发明申请
    Process for producing dielectric insulating thin film, and dielectric insulating material 失效
    电介质绝缘薄膜的制造方法以及介电绝缘材料

    公开(公告)号：US20060261516A1

    公开(公告)日：2006-11-23

    申请号：US10550016

    申请日：2004-03-26

    申请人： Toyoki Kunitake ,  Yoshitaka Aoki

    发明人： Toyoki Kunitake ,  Yoshitaka Aoki

    IPC分类号： B29C45/14

    CPC分类号： C23C18/1216 ,  C23C18/1212 ,  C23C18/1225 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1275 ,  H01L21/31683

    摘要： Provided is a method for producing, in a simple manner, a general-purpose dielectric insulating thin film that has a varying dielectric constant and accepts an accurate film thickness control and a control of the composition, the structure and the thickness thereof. The process includes a step (A) of making a substrate having a hydroxyl group in its surface or having a hydroxyl group introduced into its surface, adsorb a metal compound having a functional group capable of reacting with a hydroxyl group for condensation and capable of forming a hydroxyl group through hydrolysis, a step (B) of removing the excessive metal compound from the substrate surface, a step (C) of hydrolyzing the metal compound to form a metal oxide layer, and a step (D) of treating the metal oxide layer according to any one treating method selected from the group consisting of oxygen plasma treatment, ozone oxidation treatment, firing treatment and rapid thermal annealing treatment to thereby obtain a dielectric insulating thin film.

    摘要翻译： 本发明提供一种简单的制造具有不同介电常数的通用介电绝缘薄膜的方法，该方法能够接受精确的膜厚度控制以及其组成，结构和厚度的控制。 该方法包括在其表面制备具有羟基或具有引入其表面的羟基的基材的步骤（A），吸附具有能够与羟基反应的官能团的金属化合物用于冷凝并能够形成 通过水解的羟基，从基材表面除去过量的金属化合物的工序（B），将金属化合物水解形成金属氧化物层的工序（C），以及处理金属氧化物的工序（D） 根据选自氧等离子体处理，臭氧氧化处理，烧成处理和快速热退火处理的任一种处理方法，从而获得介电绝缘薄膜。

    Process for producing dielectric insulating thin film, and dielectric insulating material
    6.
    发明授权
    Process for producing dielectric insulating thin film, and dielectric insulating material 失效
    电介质绝缘薄膜的制造方法以及介电绝缘材料

    公开(公告)号：US07407895B2

    公开(公告)日：2008-08-05

    申请号：US10550016

    申请日：2004-03-26

    申请人： Toyoki Kunitake ,  Yoshitaka Aoki

    发明人： Toyoki Kunitake ,  Yoshitaka Aoki

    IPC分类号： H01L21/00

    CPC分类号： C23C18/1216 ,  C23C18/1212 ,  C23C18/1225 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1275 ,  H01L21/31683

    摘要： Provided is a method for producing, in a simple manner, a general-purpose dielectric insulating thin film that has a varying dielectric constant and accepts an accurate film thickness control and a control of the composition, the structure and the thickness thereof. The process includes a step (A) of making a substrate having a hydroxyl group in its surface or having a hydroxyl group introduced into its surface, adsorb a metal compound having a functional group capable of reacting with a hydroxyl group for condensation and capable of forming a hydroxyl group through hydrolysis, a step (B) of removing the excessive metal compound from the substrate surface, a step (C) of hydrolyzing the metal compound to form a metal oxide layer, and a step (D) of treating the metal oxide layer according to any one treating method selected from the group consisting of oxygen plasma treatment, ozone oxidation treatment, firing treatment and rapid thermal annealing treatment to thereby obtain a dielectric insulating thin film.

    摘要翻译： 本发明提供一种简单的制造具有不同介电常数的通用介电绝缘薄膜的方法，该方法能够接受精确的膜厚度控制以及其组成，结构和厚度的控制。 该方法包括在其表面制备具有羟基或具有引入其表面的羟基的基材的步骤（A），吸附具有能够与羟基反应的官能团的金属化合物用于冷凝并能够形成 通过水解的羟基，从基材表面除去过量的金属化合物的工序（B），将金属化合物水解形成金属氧化物层的工序（C），以及处理金属氧化物的工序（D） 根据选自氧等离子体处理，臭氧氧化处理，烧成处理和快速热退火处理的任一种处理方法，从而获得介电绝缘薄膜。

    Integrated circuit including Built-In Self Test circuit to test memory and memory test method
    10.
    发明申请
    Integrated circuit including Built-In Self Test circuit to test memory and memory test method 有权
    集成电路包括内置自检电路，用于测试内存和内存测试方法

    公开(公告)号：US20090238018A1

    公开(公告)日：2009-09-24

    申请号：US12382416

    申请日：2009-03-16

    申请人： Yasuyuki Hirasaki ,  Yoshitaka Aoki ,  Katsumi Shinbo

    发明人： Yasuyuki Hirasaki ,  Yoshitaka Aoki ,  Katsumi Shinbo

    IPC分类号： G11C29/00

    CPC分类号： G11C29/28 ,  G11C2029/2602

    摘要： An integrated circuit includes multiple memory circuits including memory cell arrays different in size, a BIST circuit which has a cell sequential transition test processor and which outputs a test cell address, a transition direction specification signal and an active signal. The integrated circuit has adjustment circuits which are provided respectively for the memory circuits and which replace the test cell address with the test cell address in a memory cell array area, or which convert the active signal into a signal indicating non-execution when the test cell address outputted from the BIST circuit corresponds to a cell in a virtual cell array being in an area outside the memory cell array.

    摘要翻译： 集成电路包括包括尺寸不同的存储单元阵列的多个存储器电路，具有单元顺序转换测试处理器并且输出测试单元地址，转移方向指定信号和有效信号的BIST电路。 集成电路具有分别为存储器电路提供的调整电路，并且将测试单元地址替换为存储单元阵列区域中的测试单元地址，或者当测试单元 从BIST电路输出的地址对应于存储单元阵列外的区域中的虚拟单元阵列中的单元。