公开(公告)号：US20240274733A1

公开(公告)日：2024-08-15

申请号：US18433763

申请日：2024-02-06

申请人： Trina Solar Co., Ltd

发明人： Daming Chen ,  Zhuohan Zhang ,  Wenxian Ji ,  Yunyun Hu ,  Wei Liu ,  Rui Yang ,  Xueling Zhang ,  Guangtao Yang ,  Yifeng Chen

IPC分类号： H01L31/0352 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/18

CPC分类号： H01L31/035272 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/02168 ,  H01L31/022441

摘要： A back-contact solar cell comprises a silicon substrate having a front surface and a back surface opposite to each other, and the silicon substrate is of a first doping type; and a first emitter, a first isolation region, a second isolation region, and a second emitter disposed on the back surface of the silicon substrate, wherein the first isolation region and the second isolation region are disposed between the first emitter and the second emitter in a first direction, the first emitter is of a second doping type, the first isolation region and the second emitter are of the first doping type, and the first direction intersects a thickness direction of the silicon substrate.

公开(公告)号：US20230136715A1

公开(公告)日：2023-05-04

申请号：US17434085

申请日：2021-05-21

申请人： Trina Solar Co., Ltd.

发明人： Xueling Zhang ,  Wei Liu ,  Hong Chen ,  Lei Jian ,  Yifeng Chen

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068

摘要： A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer sequentially arranged on the back side of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer and a third dielectric layer on the first dielectric layer.

公开(公告)号：US20240274731A1

公开(公告)日：2024-08-15

申请号：US18498498

申请日：2023-10-31

申请人： Trina Solar Co., Ltd

发明人： Zhuohan Zhang ,  Daming Chen ,  Yunyun Hu ,  Wei Liu ,  Wenxian Ji ,  Rui Yang ,  Guanchao Xu ,  Xueling Zhang ,  Guangtao Yang ,  Yifeng Chen

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02168 ,  H01L31/1868

摘要： A back contact solar cell comprises a silicon substrate which has a front surface and a back surface that opposed to each other, the silicon substrate is a first doping type; a first emitter and a second emitter are arranged on the back surface of the silicon substrate; the first emitter is of the second doping type, the second emitter is of the first doping type. The back contact solar cell further comprises a second isolation region surrounds a first isolation region, and the second isolation region surrounds the second emitter; comprising a second electrode which has a first part and a second part, a first part of is in contact with the second emitter, a second part of the second electrode is provided on a side of the corresponding the first emitter away from the silicon substrate, the first isolation region surrounds the first part of the second electrode, or the entire second electrode is in contact with the second emitter, and the first isolation region surrounds the entire second electrode.

公开(公告)号：US20230361227A1

公开(公告)日：2023-11-09

申请号：US17430951

申请日：2021-05-21

申请人： Trina Solar Co., Ltd.

发明人： Xueling Zhang ,  Wei Liu ,  Hong Chen ,  Lei Jian ,  Yifeng Chen

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L31/02167 ,  H01L31/18

摘要： A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer sequentially arranged on the back surface of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer, a third dielectric layer and a fourth dielectric layer on the first dielectric layer.