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公开(公告)号：US20050030827A1
公开(公告)日：2005-02-10
申请号：US10936283
申请日：2004-09-07
CPC分类号： G11C16/3404 , G11C16/3468 , G11C16/3472 , G11C16/3477
摘要： A single-poly PMOS nonvolatile memory (NVM) cell and a method of programming, erasing and reading such a cell are implemented using a single-poly PMOS NVM cell which includes a floating gate injection transistor, a select switch, and a tunneling capacitor having one plate in common with the floating gate of the injection transistor. Methods of altering the number of electrons on the floating gate of the single-poly PMOS NVM cell are used which, with appropriate biasing of the components permit the power terminals of the cell to have appropriate voltages applied to thereby avoid stuck bits and induce hot electrons onto the floating gate of the NVM cell.
摘要翻译： 单多晶硅PMOS非易失性存储器（NVM）单元以及编程，擦除和读取这样的单元的方法是使用包括浮置栅极注入晶体管，选择开关和隧穿电容器的单晶体PMOS NVM单元来实现的， 一个板与注入晶体管的浮动栅极共同。 使用改变单多晶硅NMOS NVM单元的浮栅上的电子数量的方法，其中组件的适当偏置允许电池的功率端子施加适当的电压，从而避免卡住位并引起热电子 到NVM单元的浮动栅极上。
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公开(公告)号：US20070171724A1
公开(公告)日：2007-07-26
申请号：US11731228
申请日：2007-03-29
IPC分类号： G11C16/06
CPC分类号： G11C16/3468 , G11C16/3404 , G11C16/3472 , G11C16/3477 , G11C16/3486 , G11C2216/10
摘要： Methods and apparatuses prevent overtunneling in nonvolatile floating gate memory (NVM) cells. An individual cell includes a circuit with a transistor that has a floating gate that stores charge, and a capacitor structure for extracting charge from the gate, such as by tunneling. A counteracting circuit prevents extracting charge from the floating gate beyond a threshold, therefore preventing overtunneling or correcting for it. In one embodiment, the counteracting circuit supplies electrons to the floating gate, to compensate for tunneling beyond a point. In another embodiment, the counteracting circuit includes a switch, and a sensor to trigger the switch when the appropriate threshold is reached. The switch may be arranged in any number of suitable ways, such as to prevent a high voltage from being applied to the capacitor structure, or to prevent a power supply from being applied to a terminal of the transistor or to a well of the transistor.
摘要翻译： 方法和装置防止非易失性浮动栅极存储器（NVM）单元中的超导。 单个电池包括具有晶体管的电路，其具有存储电荷的浮动栅极，以及用于从栅极提取电荷的电容器结构，例如通过隧道。 反作用电路防止从浮动栅极提取电荷超过阈值，因此防止对其进行过度隧穿或纠正。 在一个实施例中，反作用电路将电子提供给浮动栅极，以补偿超出点的隧穿。 在另一个实施例中，抵消电路包括开关和当达到适当的阈值时触发开关的传感器。 开关可以以任何数量的适当方式布置，例如防止高电压施加到电容器结构，或者防止电源施加到晶体管的端子或晶体管的阱。
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3.发明授权Method and apparatus for preventing overtunneling in pFET-based nonvolatile memory cells 有权用于防止基于pFET的非易失性存储单元中的过度隧穿的方法和装置公开(公告)号：US06853583B2
公开(公告)日：2005-02-08
申请号：US10245183
申请日：2002-09-16
CPC分类号： G11C16/3477 , G11C16/3404 , G11C16/3468 , G11C16/3472
摘要： Methods and apparatuses prevent overtunneling in pFET-based nonvolatile floating gate memory (NVM) cells. During a tunneling process, in which charge carriers are removed from a floating gate of a pFET-based NVM cell, a channel current of a memory cell transistor is monitored and compared to a predetermined minimum channel current required to maintain a conducting channel in an injection transistor of the memory cell. When the monitored channel current drops below the predetermined minimum channel current, charge carriers are injected onto the floating gate by impact-ionized hot-electron injection (IHEI) so that overtunneling is avoided.
摘要翻译： 方法和装置可以防止基于pFET的非易失性浮动栅极存储器（NVM）单元中的超导。 在其中从基于pFET的NVM单元的浮置栅极去除电荷载流子的隧穿过程中，监测存储单元晶体管的沟道电流，并将其与在注入中维持导通通道所需的预定最小沟道电流进行比较 晶体管的存储单元。 当监测的通道电流下降到预定的最小通道电流以下时，电荷载流子通过冲击电离热电子注入（IHEI）注入到浮动栅极上，从而避免了超导。
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4.发明授权RFID tag chips and tags refraining from participating in a subsequent inventorying attempt and methods 有权RFID标签芯片和标签不要参与随后的库存尝试和方法公开(公告)号：US08279045B2
公开(公告)日：2012-10-02
申请号：US12057467
申请日：2008-03-28
申请人： Christopher J. Diorio , Paul Dietrich , Theron Stanford , Chad Lindhorst , Kambiz Rahimi , Ali Aiouaz , Aanand Esterberg
发明人： Christopher J. Diorio , Paul Dietrich , Theron Stanford , Chad Lindhorst , Kambiz Rahimi , Ali Aiouaz , Aanand Esterberg
IPC分类号： H04Q5/22
CPC分类号： G06K7/0008 , G06K7/10039 , G06Q10/087
摘要： RFID tags and chips for RFID tags are capable of being inventoried in one or more early attempts. These tags are capable of then refraining from participating in one or more subsequent inventorying attempts. In some embodiments refraining is performed solely by the tag, while in others it is guided by the RFID reader. In some embodiments, an inventoried indicator in the tag becomes updated upon backscattering. The updated value is used by the tag to recognize a subsequent attempt, and thus refrain from participating in it. This permits the subsequent attempt to be used more intensively for inventorying the more elusive, harder-to-read tags, especially in more demanding scenarios.
摘要翻译： 用于RFID标签的RFID标签和芯片能够在一个或多个早期尝试中进行盘点。 这些标签能够避免参与一个或多个后续的盘点尝试。 在一些实施例中，仅通过标签进行避免，而在其它实施例中，RFID由RFID读取器引导。 在一些实施例中，标签中的盘存指示符在后向散射时被更新。 标签使用更新的值来识别后续尝试，因此不要参与。 这允许随后的尝试更加集中地用于清查更难以捉摸，难以阅读的标签，特别是在更苛刻的场景中。
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5.发明申请RFID TAG CHIPS AND TAGS REFRAINING FROM PARTICIPATING IN A SUBSEQUENT INVENTORYING ATTEMPT AND METHODS 有权RFID标签和标签在后续存货试用和方法中的参与公开(公告)号：US20080258916A1
公开(公告)日：2008-10-23
申请号：US12057467
申请日：2008-03-28
申请人： Christopher J. Diorio , Paul Dietrich , Theron Stanford , Chad Lindhorst , Kambiz Rahimi , Ali Aiouaz , Aanand Esterberg
发明人： Christopher J. Diorio , Paul Dietrich , Theron Stanford , Chad Lindhorst , Kambiz Rahimi , Ali Aiouaz , Aanand Esterberg
IPC分类号： G08B13/14
CPC分类号： G06K7/0008 , G06K7/10039 , G06Q10/087
摘要： RFID tags and chips for RFID tags are capable of being inventoried in one or more early attempts. These tags are capable of then refraining from participating in one or more subsequent inventorying attempts. In some embodiments refraining is performed solely by the tag, while in others it is guided by the RFID reader. In some embodiments, an inventoried indicator in the tag becomes updated upon backscattering. The updated value is used by the tag to recognize a subsequent attempt, and thus refrain from participating in it. This permits the subsequent attempt to be used more intensively for inventorying the more elusive, harder-to-read tags, especially in more demanding scenarios.
摘要翻译： 用于RFID标签的RFID标签和芯片能够在一个或多个早期尝试中进行盘点。 这些标签能够避免参与一个或多个后续的盘点尝试。 在一些实施例中，仅通过标签进行避免，而在其它实施例中，RFID由RFID读取器引导。 在一些实施例中，标签中的盘存指示符在后向散射时被更新。 标签使用更新的值来识别后续尝试，因此不要参与。 这允许随后的尝试更加集中地用于清查更难以捉摸，难以阅读的标签，特别是在更苛刻的场景中。
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6.发明申请FACILITATING RFID TAGS TO REFRAIN FROM PARTICIPATING IN A SUBSEQUENT INVENTORYING ATTEMPT 审中-公开促进RFID标签从参与到后续的存货入手公开(公告)号：US20080258878A1
公开(公告)日：2008-10-23
申请号：US12057509
申请日：2008-03-28
申请人： Paul Dietrich , Christopher J. Diorio , Theron Stanford , Chad Lindhorst , Kambiz Rahimi , Ali Aiouaz , Aanand Esterberg
发明人： Paul Dietrich , Christopher J. Diorio , Theron Stanford , Chad Lindhorst , Kambiz Rahimi , Ali Aiouaz , Aanand Esterberg
IPC分类号： H04Q5/22
CPC分类号： G06K7/0008 , G06K7/10039 , G06Q10/087
摘要： RFID reader systems, readers, components, software and methods can inventory RFID tags in one or more early attempts. Then they can facilitate the inventoried RFID tags to refrain from participating in one or more subsequent inventorying attempts. In some embodiments, an inventoried indicator in the tag becomes updated upon backscattering. The updated value is used by the tag to recognize a subsequent attempt, and thus refrain from participating in it. This permits the subsequent attempt to be used more intensively for inventorying the more elusive, harder-to-read tags, especially in more demanding scenarios.
摘要翻译： RFID读取器系统，读取器，组件，软件和方法可以在一个或多个早期尝试中存储RFID标签。 然后，它们可以促进所记录的RFID标签，以避免参与一个或多个后续的盘点尝试。 在一些实施例中，标签中的盘存指示符在后向散射时被更新。 标签使用更新的值来识别后续尝试，因此不要参与。 这允许随后的尝试更加集中地用于清查更难以捉摸，难以阅读的标签，特别是在更苛刻的场景中。
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