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17 条记录 (耗时 0.032 秒)

    Method for fabricating metal-oxide semiconductor transistors
    1.
    发明授权
    Method for fabricating metal-oxide semiconductor transistors 有权
    金属氧化物半导体晶体管的制造方法

    公开(公告)号：US08053847B2

    公开(公告)日：2011-11-08

    申请号：US12324896

    申请日：2008-11-28

    申请人： Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    发明人： Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    IPC分类号： H01L21/02

    CPC分类号： H01L21/324 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/6659

    摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.

    摘要翻译： 公开了一种制造金属氧化物半导体晶体管的方法。 首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。 进行离子注入工艺以在分隔体的两侧将含有碳，硼和氢的分子簇注入到半导体衬底中，以形成掺杂区域。 分子簇的分子量优选大于100.此后，进行毫秒退火处理以激活掺杂区域内的分子簇。

    METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS
    3.
    发明申请
    METHOD FOR FABRICATING METAL-OXIDE SEMICONDUCTOR TRANSISTORS 有权
    制备金属氧化物半导体晶体管的方法

    公开(公告)号：US20070196990A1

    公开(公告)日：2007-08-23

    申请号：US11675091

    申请日：2007-02-15

    申请人： Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    发明人： Tsai-Fu Hsiao ,  Ching-I Li ,  Po-Yuan Chen ,  Chun-An Lin ,  Hsiang-Ying Wang ,  Chao-Chun Chen ,  Chin-Cheng Chien

    IPC分类号： H01L21/336

    CPC分类号： H01L21/324 ,  H01L21/265 ,  H01L21/2652 ,  H01L29/6659

    摘要： A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing boron into the semiconductor substrate surrounding the spacer for forming a source/drain region. The weight ratio of each boron atom within the molecular cluster is preferably less than 10%. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the source/drain region.

    摘要翻译： 公开了一种制造金属氧化物半导体晶体管的方法。 首先，提供其上具有栅极结构的半导体衬底，并且在栅极结构周围形成间隔物。 执行离子注入工艺以将包含硼的分子簇注入围绕间隔物的半导体衬底中，以形成源/漏区。 分子簇内各硼原子的重量比优选小于10％。 此后，执行毫秒退火处理以激活源极/漏极区域内的分子簇。

    Method of forming a MOS transistor
    7.
    发明授权
    Method of forming a MOS transistor 有权
    形成MOS晶体管的方法

    公开(公告)号：US07795101B2

    公开(公告)日：2010-09-14

    申请号：US12701612

    申请日：2010-02-08

    申请人： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    发明人： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/6659

    摘要： A method of forming a MOS transistor, in which, a co-implantation is performed to implant a carbon co-implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect, and the carbon co-implant is from a precursor comprising CO or CO2.

    摘要翻译： 一种形成MOS晶体管的方法，其中进行共同注入以将碳共注入物注入到源极区域和漏极区域或晕圈注入区域中，以有效地防止掺杂剂在源区域中过度扩散，并且 漏极区域或晕圈注入区域，以获得良好的连接曲线并改善短沟道效应，并且碳共植入物来自包含CO或CO 2的前体。

    Method of forming a MOS transistor
    8.
    发明授权
    Method of forming a MOS transistor 有权
    形成MOS晶体管的方法

    公开(公告)号：US07396717B2

    公开(公告)日：2008-07-08

    申请号：US11278434

    申请日：2006-04-03

    申请人： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    发明人： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/2658 ,  H01L21/26506 ,  H01L29/6659

    摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, Chd xHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

    摘要翻译： 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，Chd x H y O，O +和/或C（C 其中x为1〜10的数，y为4〜4的数，n为0〜 20，n为1〜1000的数。

    MOS transistor
    9.
    发明申请
    MOS transistor 审中-公开
    MOS晶体管

    公开(公告)号：US20070228464A1

    公开(公告)日：2007-10-04

    申请号：US11748479

    申请日：2007-05-14

    申请人： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    发明人： Hsiang-Ying Wang ,  Chin-Cheng Chien ,  Tsai-Fu Hsiao ,  Ming-Yen Chien ,  Chao-Chun Chen

    IPC分类号： H01L29/772

    CPC分类号： H01L21/26506 ,  H01L21/2658 ,  H01L29/6659

    摘要： A method of forming a MOS transistor, in which a co-implantation is performed to implant an implant into a source region and a drain region or a halo implanted region to effectively prevent dopants from over diffusion in the source region and the drain region or the halo implanted region, for obtaining a good junction profile and improving short channel effect. The implant comprises carbon, a hydrocarbon, or a derivative of the hydrocarbon, such as one selected from a group consisting of C, CxHy+, and (CxHy)n+, wherein x is a number of 1 to 10, y is a number of 4 to 20, and n is a number of 1 to 1000.

    摘要翻译： 一种形成MOS晶体管的方法，其中执行共注入以将注入植入源区域和漏区域或晕圈注入区域中，以有效地防止掺杂剂在源区和漏区中的过度扩散或 用于获得良好的接合曲线并改善短沟道效应。 植入物包括碳，烃或烃的衍生物，例如选自C，C≡H，H +和/或C（C） 其中x为1〜10的数，y为4〜20的数，n为1〜10的数，n为0〜 数量为1〜1000。