公开(公告)号：US08152928B2

公开(公告)日：2012-04-10

申请号：US11798599

申请日：2007-05-15

申请人： Tsukasa Watanabe ,  Naoki Shindo ,  Koukichi Hiroshiro ,  Yuji Kamikawa

发明人： Tsukasa Watanabe ,  Naoki Shindo ,  Koukichi Hiroshiro ,  Yuji Kamikawa

IPC分类号： B08B6/00 ,  B08B7/00 ,  B08B7/02 ,  B08B3/12 ,  H01L21/304

CPC分类号： H01L21/67057 ,  H01L21/67051

摘要： A substrate cleaning method can uniformly removing particles from substrates at a high removing efficiency. The substrate cleaning method includes the steps of immersing substrates W in a cleaning liquid in a cleaning tank 12, and generating ultrasonic waves in the cleaning liquid contained in the cleaning tank. A region in the cleaning tank toward which the cleaning liquid is supplied is varied with respect to a vertical level in the step of generating ultrasonic waves in the cleaning liquid while the cleaning liquid is being supplied into the cleaning tank.

摘要翻译： 基板清洗方法可以以高的去除效率从基板中均匀地除去颗粒。 基板清洗方法包括将清洗液中的基板W浸渍在清洗槽12中的步骤，在清洗槽内所含的清洗液中产生超声波。 在将清洗液供给到清洗槽中时，在清洗槽中供给清洗液的区域相对于在清洗液中产生超声波的步骤中的垂直高度变化。

公开(公告)号：US20070267040A1

公开(公告)日：2007-11-22

申请号：US11798599

申请日：2007-05-15

申请人： Tsukasa Watanabe ,  Naoki Shindo ,  Koukichi Hiroshiro ,  Yuji Kamikawa

发明人： Tsukasa Watanabe ,  Naoki Shindo ,  Koukichi Hiroshiro ,  Yuji Kamikawa

IPC分类号： B08B3/12

CPC分类号： H01L21/67057 ,  H01L21/67051

摘要： A substrate cleaning method can uniformly removing particles from substrates at a high removing efficiency. The substrate cleaning method includes the steps of immersing substrates W in a cleaning liquid in a cleaning tank 12, and generating ultrasonic waves in the cleaning liquid contained in the cleaning tank. A region in the cleaning tank toward which the cleaning liquid is supplied is varied with respect to a vertical level in the step of generating ultrasonic waves in the cleaning liquid while the cleaning liquid is being supplied into the cleaning tank.

摘要翻译： 基板清洗方法可以以高的去除效率从基板中均匀地除去颗粒。 基板清洗方法包括将清洗液中的基板W浸渍在清洗槽12中的步骤，在清洗槽内所含的清洗液中产生超声波。 在将清洗液供给到清洗槽中时，在清洗槽中供给清洗液的区域相对于在清洗液中产生超声波的步骤中的垂直高度变化。

公开(公告)号：US08015984B2

公开(公告)日：2011-09-13

申请号：US11922502

申请日：2006-06-16

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US20090101186A1

公开(公告)日：2009-04-23

申请号：US11922502

申请日：2006-06-16

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/04

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US08303724B2

公开(公告)日：2012-11-06

申请号：US13206186

申请日：2011-08-09

申请人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi Hiroshiro ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US20110290280A1

公开(公告)日：2011-12-01

申请号：US13206186

申请日：2011-08-09

申请人： Koukichi HIROSHIRO ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

发明人： Koukichi HIROSHIRO ,  Yuji Kamikawa ,  Takayuki Toshima ,  Naoki Shindo

IPC分类号： B08B3/00

CPC分类号： H01L21/02057 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67057

摘要： Disclosed is a substrate processing apparatus for cleaning and drying a substrate such as a semiconductor wafer. This substrate processing apparatus includes a liquid processing unit for processing a substrate by immersing the substrate in stored purified water, a drying unit arranged above the liquid processing unit and configured to dry the substrate, a substrate transfer apparatus for transferring the substrate between the liquid processing unit and drying unit, a fluid supply mechanism for supplying a fluid mixture containing vapor or mist of purified water and vapor or mist of a volatile organic solvent to the drying unit, and a controller for controlling the supply of the fluid mixture.

摘要翻译： 公开了一种用于清洗和干燥诸如半导体晶片的衬底的衬底处理装置。 该基板处理装置包括：液体处理单元，用于通过将基板浸渍在储存的净化水中来处理基板;干燥单元，布置在液体处理单元上方并构造成干燥基板;基板输送装置，用于在液体处理 单元和干燥单元，用于将含有纯净水的蒸气或雾的挥发性有机溶剂的蒸气或雾的流体混合物供给到干燥单元的流体供给机构，以及用于控制流体混合物的供给的控制器。

公开(公告)号：US08347901B2

公开(公告)日：2013-01-08

申请号：US11717170

申请日：2007-03-13

申请人： Tsukasa Watanabe ,  Naoki Shindo ,  Takahiro Furukawa ,  Yuji Kamikawa

发明人： Tsukasa Watanabe ,  Naoki Shindo ,  Takahiro Furukawa ,  Yuji Kamikawa

IPC分类号： B08B3/12

CPC分类号： B08B3/12 ,  B01F15/00207 ,  B01F15/0022 ,  B01F15/0429 ,  B08B3/00 ,  C11D11/0047 ,  H01L21/67057

摘要： The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate to be processed W is subjected to an ultrasonic cleaning process. While the substrate to be processed is being cleaned, a dissolved gas concentration of a gas dissolved in the cleaning liquid contained in the cleaning tank is changed.

摘要翻译： 本发明提供一种能够以高去除效率从待处理基板的整个表面去除颗粒的基板清洗方法。 在本发明的基板清洗方法中，将待处理基板W浸入清洗槽12内的清洗液中。然后，在包含在清洗槽12内的清洗液中产生超声波，使基板 待处理的W进行超声波清洗处理。 当被处理基板被清洗时，溶解在清洗槽中所含的清洗液中的溶解气体浓度变化。

公开(公告)号：US20070215172A1

公开(公告)日：2007-09-20

申请号：US11717170

申请日：2007-03-13

申请人： Tsukasa Watanabe ,  Naoki Shindo ,  Takahiro Furukawa ,  Yuji Kamikawa

发明人： Tsukasa Watanabe ,  Naoki Shindo ,  Takahiro Furukawa ,  Yuji Kamikawa

IPC分类号： B08B3/12 ,  B08B3/00

CPC分类号： B08B3/12 ,  B01F15/00207 ,  B01F15/0022 ,  B01F15/0429 ,  B08B3/00 ,  C11D11/0047 ,  H01L21/67057

摘要： The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate to be processed W is subjected to an ultrasonic cleaning process. While the substrate to be processed is being cleaned, a dissolved gas concentration of a gas dissolved in the cleaning liquid contained in the cleaning tank is changed.

摘要翻译： 本发明提供一种能够以高去除效率从待处理基板的整个表面去除颗粒的基板清洗方法。 在本发明的基板清洗方法中，将被处理基板W浸渍在清洗槽12内的清洗液中。 然后，在包含在清洗槽12中的清洗液中产生超声波，使待处理基板W进行超声波清洗处理。 当被处理基板被清洗时，溶解在清洗槽中所含的清洗液中的溶解气体浓度变化。

公开(公告)号：US6158447A

公开(公告)日：2000-12-12

申请号：US149852

申请日：1998-09-08

申请人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

发明人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

IPC分类号： B08B3/08 ,  H01L21/00 ,  H01L21/306 ,  H01L21/66 ,  B08B3/02

CPC分类号： H01L21/02052 ,  B08B3/08 ,  B24B37/013 ,  H01L21/67057 ,  H01L22/26 ,  Y10S134/902

摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

公开(公告)号：US06592678B1

公开(公告)日：2003-07-15

申请号：US09689408

申请日：2000-10-12

申请人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

发明人： Yuji Kamikawa ,  Naoki Shindo ,  Shigenori Kitahara ,  Miyako Yamasaka

IPC分类号： B08B304

CPC分类号： H01L21/02052 ,  B08B3/08 ,  B24B37/013 ,  H01L21/67057 ,  H01L22/26 ,  Y10S134/902

摘要： A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44. On the basis of a detection signal outputted from the temperature sensor 44, the amount of the chemical injected by the diaphragm pump 37 is controlled so that the concentration of the chemical is a predetermined concentration. Thus, a predetermined amount of chemical can be injected so as to clean the wafer W with a predetermined concentration of chemical.

摘要翻译： 清洁设备通常包括：清洗槽3​​0，用于在其中存储清洁溶液以允许将半导体晶片W浸入清洁溶液中以清洁晶片W的表面; 用于将清洗槽30连接到纯水供给源31的清洗液供给管33; 用于在其中存储化学品的化学品储存容器34; 用于经由注入截止阀35将清洗液供给管33与药剂收容容器34连接的化学品供给管36; 以及用于将预定量的化学品从化学物质储存容器34注入到通过清洁溶液供应管33的纯水的隔膜泵37.清洗槽30中的清洁溶液的温度例如由温度传感器 基于从温度传感器44输出的检测信号，控制由隔膜泵37喷射的化学物质的量，使得化学品的浓度为预定浓度。 因此，可以注入预定量的化学品以便以预定浓度的化学品清洁晶片W.