公开(公告)号：US5909117A

公开(公告)日：1999-06-01

申请号：US925425

申请日：1997-09-08

申请人： Tsutomu Nakadai ,  Osamu Ishiwata

发明人： Tsutomu Nakadai ,  Osamu Ishiwata

IPC分类号： G01R33/12

CPC分类号： G01R33/1207

摘要： Functional devices for inspecting disks are arranged around a turntable at equal spacings of angle 2n.pi./(n+m) in the order of the operations they perform. The turntable is rotated both in forward direction by angle 2n.pi./(n+m) and in reverse direction by angle 2m.pi./(n+m) such that the total angle of rotations in forward direction is equal to that of rotations in reverse direction when the necessary operations have completed without causing the turntable to rotate fully once.

摘要翻译： 用于检查盘的功能装置按照它们执行的操作的顺序以等于角度2n pi /（n + m）的间隔围绕转盘布置。 转盘在正向方向上旋转角度为2n pi /（n + m），反方向旋转角度为2mpi /（n + m），使得正向旋转的总转角等于反向转动的总转角 方向，当必要的操作完成，而不会使转台完全旋转一次。

公开(公告)号：US5019886A

公开(公告)日：1991-05-28

申请号：US282612

申请日：1988-12-12

申请人： Noritada Sato ,  Toshikazu Suzuki ,  Osamu Ishiwata

发明人： Noritada Sato ,  Toshikazu Suzuki ,  Osamu Ishiwata

IPC分类号： H01L31/09 ,  G01T3/08 ,  H01L31/115 ,  H01L31/18

CPC分类号： H01L31/115 ,  G01T3/08 ,  H01L31/1804 ,  Y02E10/547

摘要： A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remains resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

摘要翻译： 特别适用于中子检测的基于半导体的辐射检测元件及其制造方法，其中高灵敏度单晶半导体衬底在其中保留在其中的3He气体的至少一个区域内扩散， 由此，当对半导体衬底中的接合部施加反向偏压时，入射中子与驻留的3He气体的碰撞导致在半导体内的耗尽层中产生空穴 - 电子对的反应，产生的空穴 - 电子对 输出出现在检测器的输出端的电脉冲，以便与连接到基于半导体的辐射检测器元件的检测和测量装置一起利用。

公开(公告)号：US5156979A

公开(公告)日：1992-10-20

申请号：US664825

申请日：1991-05-07

申请人： Noritada Sato ,  Toshikazu Suzuki ,  Osamu Ishiwata

发明人： Noritada Sato ,  Toshikazu Suzuki ,  Osamu Ishiwata

IPC分类号： G01T3/08 ,  H01L31/115 ,  H01L31/18

CPC分类号： H01L31/1804 ,  G01T3/08 ,  H01L31/115 ,  Y02E10/547 ,  Y10S438/918

摘要： A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remain resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

摘要翻译： 特别适用于中子检测的基于半导体的辐射检测元件及其制造方法，其中高灵敏度单晶半导体衬底在其中保留在其中的3He气体的至少一个区域扩散， 由此，当对半导体衬底中的接合部施加反向偏压时，入射中子与驻留的3He气体的碰撞导致在半导体内的耗尽层中产生空穴 - 电子对的反应，产生的空穴 - 电子对 输出出现在检测器的输出端的电脉冲，以便与连接到基于半导体的辐射检测器元件的检测和测量装置一起利用。

公开(公告)号：US4627991A

公开(公告)日：1986-12-09

申请号：US610638

申请日：1984-05-16

申请人： Yasukazu Seki ,  Noritada Sato ,  Osamu Ishiwata

发明人： Yasukazu Seki ,  Noritada Sato ,  Osamu Ishiwata

IPC分类号： H01L21/31 ,  H01L21/314 ,  H01L21/56 ,  B05D3/06

CPC分类号： H01L21/56 ,  H01L21/31 ,  H01L21/314 ,  H01L2924/0002

摘要： In the representative embodiment of the invention described in the specification, a boron coating is applied to a semiconductor body having a protective film of a compound of the semiconductor material by heating the semiconductor body to a temperature below 400.degree. C. in a vacuum chamber, introducing diborane gas into the chamber and causing a glow discharge between two electrodes in the chamber.

摘要翻译： 在本说明书中描述的本发明的代表性实施例中，通过在真空室中将半导体本体加热到低于400℃的温度，将硼涂层施加到具有半导体材料的化合物的保护膜的半导体主体上， 将乙硼烷气体引入室中并在室中的两个电极之间引起辉光放电。

公开(公告)号：US5877857A

公开(公告)日：1999-03-02

申请号：US926011

申请日：1997-09-09

申请人： Osamu Ishiwata ,  Takayuki Ishiguro ,  Keiji Katoh

发明人： Osamu Ishiwata ,  Takayuki Ishiguro ,  Keiji Katoh

IPC分类号： G01B11/24 ,  G11B5/54 ,  G11B5/55 ,  G11B5/82 ,  G11B5/84 ,  G11B19/04 ,  G11B21/10 ,  G11B33/10 ,  G01B9/02

CPC分类号： G01B11/2408 ,  G11B19/04 ,  G11B21/106 ,  G11B5/54 ,  G11B5/82 ,  G11B5/84 ,  G11B33/10 ,  G11B5/5534

摘要： The tester and the test method for testing an eccentricity of a head turnout zone of a magnetic disk determine a turnout zone as acceptable or unacceptable by spirally scanning a turnout zone of a magnetic disk with a laser spot by rotating the magnetic disk and continuously moving either the laser spot radially of the magnetic disk or the magnetic disk radially thereof, obtaining a detection signal having amplitude corresponding to an intensity of a scattering light from the magnetic disk irradiated with the laser spot, extracting a first waveform of the detection signal corresponding to an intermediate region between an inside variation region in which an inside boarder line of the turnout zone radially of the magnetic disk by radial movement of the turnout zone caused by an ecentricity of the turnout zone and an outside variation region in which an outside boarder line of the turnout zone radially of the magnetic disk by the radial movement of the turnout zone caused by the eccentricity of the magnetic disk and a second waveform of either the detection signal adjacent to the first waveform and corresponding to the inside variation region or the detection signal adjacent to the first waveform and corresponding to the outside variation region and detecting an eccntricity of the turnout zone on a basis of a positional relation between the first and second waveforms.

摘要翻译： 用于测试磁盘的磁头转向区域的偏心度的测试器和测试方法通过旋转磁盘来确定通过用激光点螺旋地扫描具有激光光斑的磁盘的投射区域来接受或不可接受的投射区域，并连续移动 磁盘的径向放射状的激光光斑或磁盘的径向地获得具有与激光光点照射的磁盘的散射光的强度对应的振幅的检测信号，提取与该激光光斑对应的检测信号的第一波形 内侧变化区域，其内部变化区域，其中通过轨道出口区域的偏心引起的道岔区域的径向移动，其中径向位于磁盘的迂回区域的内边缘线之间的内侧变化区域和外部变化区域， 由于由偏心引起的岔口区的径向移动，磁盘的径向出射区域 并且对应于与第一波形相邻的内部变化区域或与第一波形相邻的检测信号并且对应于外部变化区域的检测信号的第二波形和检测信号的检测信号的第二波形，并且检测输出区域的响应度 基于第一和第二波形之间的位置关系。