公开(公告)号：US4627991A

公开(公告)日：1986-12-09

申请号：US610638

申请日：1984-05-16

申请人： Yasukazu Seki ,  Noritada Sato ,  Osamu Ishiwata

发明人： Yasukazu Seki ,  Noritada Sato ,  Osamu Ishiwata

IPC分类号： H01L21/31 ,  H01L21/314 ,  H01L21/56 ,  B05D3/06

CPC分类号： H01L21/56 ,  H01L21/31 ,  H01L21/314 ,  H01L2924/0002

摘要： In the representative embodiment of the invention described in the specification, a boron coating is applied to a semiconductor body having a protective film of a compound of the semiconductor material by heating the semiconductor body to a temperature below 400.degree. C. in a vacuum chamber, introducing diborane gas into the chamber and causing a glow discharge between two electrodes in the chamber.

摘要翻译： 在本说明书中描述的本发明的代表性实施例中，通过在真空室中将半导体本体加热到低于400℃的温度，将硼涂层施加到具有半导体材料的化合物的保护膜的半导体主体上， 将乙硼烷气体引入室中并在室中的两个电极之间引起辉光放电。

公开(公告)号：US4618381A

公开(公告)日：1986-10-21

申请号：US613778

申请日：1984-05-24

申请人： Noritada Sato ,  Yasukazu Seki ,  Osamu Ishiwate

发明人： Noritada Sato ,  Yasukazu Seki ,  Osamu Ishiwate

IPC分类号： H01L21/223 ,  H01L21/225 ,  H01J17/00

CPC分类号： H01L21/223

摘要： A method for adding impurities to a semiconductor base material comprises the steps of placing the base material in a vacuum chamber having an atmosphere containing the impurities as dopants, heating the base material to a temperature not exceeding 400.degree. C., and causing a glow discharge in the vacuum chamber. The impurities are introduced as a gas containing, for example, diboron, phosphine, antimony, arsenic, gallium, or as an organic metal gas such as trimethyl gallium, trimethyl indium, or trimethyl aluminum. To cause the dopant atoms to become substitutional by assuming lattice positions, the base material may be subjected to a second glow discharge in an inert gas atmosphere.

摘要翻译： 将杂质添加到半导体基材中的方法包括以下步骤：将基材放置在具有含有杂质的气氛的真空室中作为掺杂剂，将基材加热到不超过400℃的温度，并使辉光放电 在真空室中。 杂质作为含有例如二硼，膦，锑，砷，镓或作为有机金属气体如三甲基镓，三甲基铟或三甲基铝的气体引入。 为了通过假定晶格位置使掺杂剂原子变成替代物，可以在惰性气体气氛中对基材进行第二辉光放电。

公开(公告)号：US4689649A

公开(公告)日：1987-08-25

申请号：US771622

申请日：1985-09-03

申请人： Noritada Sato ,  Toshikazu Suzuki ,  Yasukazu Seki

发明人： Noritada Sato ,  Toshikazu Suzuki ,  Yasukazu Seki

IPC分类号： H01L31/09 ,  G01T1/24 ,  H01L31/0352 ,  H01L31/118 ,  H01L27/14 ,  G01T1/22

CPC分类号： G01T1/241 ,  H01L31/03529 ,  H01L31/1185 ,  Y02E10/50

摘要： A semiconductor device for detecting incident gamma-radiation wherein the output from the device is relatively independent of the energy of the incident radiation. The device includes a semiconductor substrate having a depletion layer formed therein by an applied voltage. The depletion layer is shaped such that it includes a plurality of elongated projections within a plane parallel to the surface of the substrate. The minimum distance between the edge of the substrate and the outer extent of the depletion layer is substantially equal to the average range of mobility of secondary electrons created by the gamma rays having the highest energy of the gamma-rays to be detected. The device further includes means for counting the current pulses generated in the depletion layer by secondary electrons created by the incident gamma rays.

摘要翻译： 一种用于检测入射伽马辐射的半导体器件，其中来自器件的输出相对独立于入射辐射的能量。 该器件包括其中通过施加的电压在其中形成耗尽层的半导体衬底。 耗尽层被成形为使得其在平行于衬底的表面的平面内包括多个细长突起。 衬底的边缘与耗尽层的外部范围之间的最小距离基本上等于由待检测的伽马射线能量最高的γ射线产生的二次电子的平均移动范围。 该装置还包括用于通过由入射的伽马射线产生的二次电子来计数在耗尽层中产生的电流脉冲的装置。

公开(公告)号：US4835587A

公开(公告)日：1989-05-30

申请号：US103917

申请日：1987-10-01

申请人： Noritada Sato ,  Yasukazu Seki

发明人： Noritada Sato ,  Yasukazu Seki

IPC分类号： H01L27/146 ,  H01L31/0352 ,  H01L31/118

CPC分类号： H01L31/1185 ,  H01L27/14643 ,  H01L31/03529 ,  Y02E10/50

摘要： A semiconductor device for detecting gamma radiation displaying superior linearity of response to radiation without showing any energy dependency even if the gamma rays have the high energy is formed using an annular depletion region surrounded by non-depletion regions. The size of the regions is selected so that the distance from the edge of the depletion to the most distant point of the non-depletion region is at least about equal to the mean range of the highest energy gamma ray to be measured.

摘要翻译： 一种半导体器件，用于检测伽马射线，即使伽马射线具有高能量，也可以使用由非耗尽区域包围的环形耗尽区域来形成显示对辐射的响应的优异线性，而不显示任何能量依赖性。 选择区域的大小，使得从耗尽区域的边缘到非耗尽区域的最远点的距离至少等于要测量的最高能量γ射线的平均范围。

公开(公告)号：US4565588A

公开(公告)日：1986-01-21

申请号：US659360

申请日：1984-10-10

申请人： Yasukazu Seki ,  Noritada Sato

发明人： Yasukazu Seki ,  Noritada Sato

IPC分类号： H01L21/225 ,  H01L21/385

CPC分类号： H01L21/2255

摘要： In the particular embodiments of the invention described in the specification, impurities are diffused into a silicon substrate by applying a solution of the impurity to the substrate, drying the substrate and subjecting it to a glow discharge in an inert gas atmosphere at a pressure of 0.2 to 0.7 Torr and a substrate temperature of 300.degree. C. A semiconductor with n-type properties is formed by using phosphoric acid to provide phosphorus as the impurity and a p-type semiconductor is formed by using boric acid to provide boron as the impurity. Impurity depths of less than one .mu.m are obtained using a solution containing 0.01 parts per 1000 by volume of the impurity.

摘要翻译： 在本说明书中描述的本发明的特定实施例中，通过将杂质溶液施加到基板上，干燥基板并在惰性气体气氛中以0.2的压力进行辉光放电，将杂质扩散到硅基板中 通过使用磷酸提供磷作为杂质形成具有n型性质的半导体，并且通过使用硼酸提供硼作为杂质形成p型半导体。 使用含有0.01份/ 1000体积的杂质的溶液获得小于1微米的杂质深度。

公开(公告)号：US4762803A

公开(公告)日：1988-08-09

申请号：US805879

申请日：1985-12-06

申请人： Noritada Sato ,  Yasukazu Seki

发明人： Noritada Sato ,  Yasukazu Seki

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/365

CPC分类号： H01L21/2022

摘要： Crystalline silicon films are formed by exposing a film of amorphous silicon on a substrate to a glow discharge in the presence of an inert gas such as argon. Masks can be used to allow for selective crystallization of defined regions of the amorphous film.

摘要翻译： 通过在惰性气体如氩气存在下，将衬底上的非晶硅膜暴露于辉光放电来形成结晶硅膜。 掩模可用于允许非晶膜的限定区域的选择性结晶。

公开(公告)号：US4692782A

公开(公告)日：1987-09-08

申请号：US613890

申请日：1984-05-24

申请人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

发明人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

IPC分类号： G01T1/24 ,  H01L31/09 ,  H01L31/115 ,  H01L31/118 ,  H01L27/14 ,  G01T1/22

CPC分类号： H01L31/1185 ,  H01L31/115 ,  H01L31/118

摘要： In the representative radiation detectors described in the specification, an amorphous silicon layer is grown on one or both of the opposed electrode surfaces of a single crystal silicon substrate and the amorphous silicon layer extends to the side surface of the substrate. The corresponding electrode is deposited on the amorphous silicon layer. Detectors may also be made using a single crystal of Ge, GeAs or CdTe with an amorphous layer of the same or another semiconductor material.

摘要翻译： 在本说明书中描述的代表性辐射探测器中，在单晶硅衬底的一个或两个相对的电极表面上生长非晶硅层，并且非晶硅层延伸到衬底的侧表面。 相应的电极沉积在非晶硅层上。 也可以使用具有相同或另一种半导体材料的非晶层的Ge，GeAs或CdTe的单晶制造检测器。

公开(公告)号：US4896200A

公开(公告)日：1990-01-23

申请号：US153520

申请日：1988-02-01

申请人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

发明人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

IPC分类号： H01L31/09 ,  G01T1/24 ,  H01L31/0224 ,  H01L31/115 ,  H01L31/118

CPC分类号： H01L31/022408 ,  H01L31/115 ,  H01L31/1185

摘要： A semiconductor-based radiation detector comprising a semiconductor substrate and an amorphous semiconductor layer formed on one surface of the substrate, one electrode being applied to the substrate and one to the amorphous layer, the electrodes formed on the amorphous semiconductor layer consisting of closely spaced, interconnected conductive strips which are substantially uniformly arranged over the entire radiation-incident surface of the amorphous semiconductor layer whereby the electrostatic capacitance appearing between the electrodes of the detector is significantly reduced without significantly changing the area of the detector that responds to radiation.

摘要翻译： 一种基于半导体的辐射检测器，包括形成在所述衬底的一个表面上的半导体衬底和非晶半导体层，一个电极施加到所述衬底上，一个电极施加到所述非晶层，所述电极形成在所述非晶半导体层上， 互连的导电条，其基本均匀地布置在非晶半导体层的整个辐射入射表面上，由此出现在检测器的电极之间的静电电容显着降低，而不显着改变响应于辐射的检测器的面积。

公开(公告)号：US4611224A

公开(公告)日：1986-09-09

申请号：US640659

申请日：1984-08-14

申请人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

发明人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

IPC分类号： G01T1/24 ,  H01L31/09 ,  H01L31/109 ,  H01L31/20 ,  H01L27/14

CPC分类号： H01L31/202 ,  H01L31/109 ,  Y02E10/50 ,  Y02P70/521

摘要： In the specific embodiments described in the specification, a semiconductor radiation detector has a single-crystal silicon substrate coated with an amorphous silicon film containing an impurity to widen the mobility band gap of the semiconductor to reduce the reverse bias leakage current. Phosphorus and carbon are disclosed as impurities for the amorphous silicon film.

摘要翻译： 在本说明书中描述的具体实施例中，半导体辐射检测器具有涂覆有含杂质的非晶硅膜的单晶硅衬底，以加宽半导体的迁移率带隙以减小反向偏置漏电流。 公开了磷和碳作为非晶硅膜的杂质。

公开(公告)号：US5019886A

公开(公告)日：1991-05-28

申请号：US282612

申请日：1988-12-12

申请人： Noritada Sato ,  Toshikazu Suzuki ,  Osamu Ishiwata

发明人： Noritada Sato ,  Toshikazu Suzuki ,  Osamu Ishiwata

IPC分类号： H01L31/09 ,  G01T3/08 ,  H01L31/115 ,  H01L31/18

CPC分类号： H01L31/115 ,  G01T3/08 ,  H01L31/1804 ,  Y02E10/547

摘要： A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remains resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

摘要翻译： 特别适用于中子检测的基于半导体的辐射检测元件及其制造方法，其中高灵敏度单晶半导体衬底在其中保留在其中的3He气体的至少一个区域内扩散， 由此，当对半导体衬底中的接合部施加反向偏压时，入射中子与驻留的3He气体的碰撞导致在半导体内的耗尽层中产生空穴 - 电子对的反应，产生的空穴 - 电子对 输出出现在检测器的输出端的电脉冲，以便与连接到基于半导体的辐射检测器元件的检测和测量装置一起利用。