摘要:
According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.
摘要:
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface.
摘要:
A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.
摘要:
An image forming structure includes an image holding member holding a latent image and an image obtained by developing the latent image, a developing device developing the latent image on the image holding member with a powder to form an image on the image holding member, a container mounting section demountably mounted with a container storing a powder to be supplied to the developing device, a shutter member that is disposed in a supply path including a powder introducing portion of the developing device and that blocks the supply path, and a supply member that is disposed at a position where the supply member engages with the shutter member and that rotates to supply the powder in a direction of a rotation shaft, wherein the supply member rotates to move the shutter member to an open position where the supply path is opened.
摘要:
A positive resist composition including a base component (A′) which exhibits increased solubility in an alkali developing solution under the action of acid and generates acid upon exposure, the base component (A′) including a resin component (A1) having a structural unit (a0-1) represented by general formula (a0-1), a structural unit (a0-2) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group (wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof).
摘要翻译:一种正性抗蚀剂组合物,其包含在酸性作用下在碱性显影液中显示出增加的溶解性并在曝光时产生酸的基础组分(A'),所述基础组分(A')包括具有结构单元的树脂组分(A1) 由通式(a0-1)表示的(a0-1),曝光时产生酸的结构单元(a0-2)和由含有酸解离的溶解抑制基团的丙烯酸酯衍生的结构单元(a1)(其中 R 1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基,R 2表示二价连接基团,R 3表示在其环骨架中含有-SO 2 - 的环状基团) 。
摘要:
A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure and a fluorine-containing polymeric compound (C′) which generates acid upon exposure, the base component (A) having a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and the fluorine-containing polymeric compound (C′) having a structural unit (c0) which generates acid upon exposure and a structural unit (c1) represented by formula (c1) (wherein R2 represents a divalent linking group, R3 represents a cyclic group containing —SO2— within the ring skeleton, Q0 represents a single bond or a divalent linking group, and R0 represents an organic group which may have a fluorine atom).