SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20130069147A1

    公开(公告)日:2013-03-21

    申请号:US13421816

    申请日:2012-03-15

    IPC分类号: H01L29/78 H01L21/336

    摘要: According to an embodiment, a semiconductor device includes a semiconductor layer of a first conductive type, a base region of a second conductive type provided on the semiconductor layer and a first contact region of a second conductive type provided on the base region. The device includes a gate electrode provided in a trench piercing through the first contact region and the base region, and an interlayer insulating film provided on the gate electrode and containing a first conductive type impurity element. The device further includes a source region of a first conductive type provided between the interlayer insulating film and the first contact region, the source region being in contact with a side face of the interlayer insulating film and extending in the base region.

    摘要翻译: 根据实施例,半导体器件包括第一导电类型的半导体层,设置在半导体层上的第二导电类型的基极区域和设置在基极区域上的第二导电类型的第一接触区域。 该器件包括设置在穿过第一接触区域和基极区域的沟槽中的栅电极,以及设置在栅极上并包含第一导电型杂质元素的层间绝缘膜。 该器件还包括设置在层间绝缘膜和第一接触区域之间的第一导电类型的源极区域,源极区域与层间绝缘膜的侧面接触并且在基极区域中延伸。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20120241896A1

    公开(公告)日:2012-09-27

    申请号:US13233941

    申请日:2011-09-15

    IPC分类号: H01L29/47

    摘要: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface.

    摘要翻译: 根据一个实施例,半导体器件包括第一导电类型的第一半导体层,第二导电类型的多个第二半导体区域,第二导电类型的第三半导体区域和第一电极。 第二区域分别设置在第一层的第一主表面侧。 第三区域设置在第一层的第一主表面侧,以围绕第二区域。 第一电极设置在第一层和第二区上。 第一层具有第一部分和第二部分。 第二部分具有比第一部分更低的电阻率。 第二部分设置在第二区域之间以及第一部分与第一主表面之间,并且设置在第三区域的外部以及第一部分与第一主表面之间。

    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND
    3.
    发明申请
    RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND 有权
    耐蚀组合物,形成耐蚀图案和聚合物的方法

    公开(公告)号:US20120282551A1

    公开(公告)日:2012-11-08

    申请号:US13402820

    申请日:2012-02-22

    摘要: A resist composition including a resin component which generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid, the resin component including a resin component having a structural unit represented by a general formula (a0-0-1) shown below in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R0-1 represents a single bond or a divalent linking group, each of R2, R3 and R4 independently represents a linear, branched or cyclic alkyl group which may have a non-aromatic substituent, or R3 and R4 may be bonded to each other to form a ring together with the sulfur atom, and X represents a non-aromatic divalent linking group or a single bond.

    摘要翻译: 一种抗蚀剂组合物,其包含在曝光后产生酸的树脂组分,并且在酸的作用下在显影液中显示出改变的溶解性,所述树脂组分包括具有由通式(a0-0-1)表示的结构单元的树脂组分 其中R表示氢原子,1至5个碳原子的烷基或1至5个碳原子的卤代烷基,R 0-1表示单键或二价连接基团,R 2,R 3和R 4各自 独立地表示可以具有非芳香族取代基的直链状,支链状或环状的烷基,或者R3和R4可以与硫原子一起形成环,X表示非芳香族二价连接基团或 单一债券。

    IMAGE FORMING STRUCTURE, IMAGE FORMING APPARATUS, AND DEVELOPING DEVICE
    4.
    发明申请
    IMAGE FORMING STRUCTURE, IMAGE FORMING APPARATUS, AND DEVELOPING DEVICE 有权
    图像形成结构,图像形成装置和开发装置

    公开(公告)号:US20120251186A1

    公开(公告)日:2012-10-04

    申请号:US13269233

    申请日:2011-10-07

    申请人: Masatoshi ARAI

    发明人: Masatoshi ARAI

    IPC分类号: G03G15/08

    CPC分类号: G03G15/0886 G03G2215/0838

    摘要: An image forming structure includes an image holding member holding a latent image and an image obtained by developing the latent image, a developing device developing the latent image on the image holding member with a powder to form an image on the image holding member, a container mounting section demountably mounted with a container storing a powder to be supplied to the developing device, a shutter member that is disposed in a supply path including a powder introducing portion of the developing device and that blocks the supply path, and a supply member that is disposed at a position where the supply member engages with the shutter member and that rotates to supply the powder in a direction of a rotation shaft, wherein the supply member rotates to move the shutter member to an open position where the supply path is opened.

    摘要翻译: 图像形成结构包括保持潜像的图像保持部件和通过使潜像显影而获得的图像;显影装置,其利用粉末在图像保持部件上显影潜像,以在图像保持部件上形成图像;容器 安装部,其可拆卸地安装有容纳供给到显影装置的粉末的容器;闸板部件,其设置在包括显影装置的粉末引入部分并且阻止供给路径的供给路径中;以及供给部件, 设置在所述供应构件与所述活门构件接合的位置,并且所述位置旋转以沿着旋转轴的方向供应所述粉末,其中所述供应构件旋转以将所述活门构件移动到所述供应路径打开的打开位置。

    POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND
    5.
    发明申请
    POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND 有权
    正电阻组合物,形成电阻型和聚合物的方法

    公开(公告)号:US20110244392A1

    公开(公告)日:2011-10-06

    申请号:US12979076

    申请日:2010-12-27

    IPC分类号: G03F7/004 G03F7/20 C08F228/06

    摘要: A positive resist composition including a base component (A′) which exhibits increased solubility in an alkali developing solution under the action of acid and generates acid upon exposure, the base component (A′) including a resin component (A1) having a structural unit (a0-1) represented by general formula (a0-1), a structural unit (a0-2) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group (wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof).

    摘要翻译: 一种正性抗蚀剂组合物,其包含在酸性作用下在碱性显影液中显示出增加的溶解性并在曝光时产生酸的基础组分(A'),所述基础组分(A')包括具有结构单元的树脂组分(A1) 由通式(a0-1)表示的(a0-1),曝光时产生酸的结构单元(a0-2)和由含有酸解离的溶解抑制基团的丙烯酸酯衍生的结构单元(a1)(其中 R 1表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基,R 2表示二价连接基团,R 3表示在其环骨架中含有-SO 2 - 的环状基团) 。

    POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    6.
    发明申请
    POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
    正电阻组合物和形成电阻图案的方法

    公开(公告)号:US20110236824A1

    公开(公告)日:2011-09-29

    申请号:US12979067

    申请日:2010-12-27

    IPC分类号: G03F7/00 G03F7/20

    摘要: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid, an acid-generator component (B) which generates acid upon exposure and a fluorine-containing polymeric compound (C′) which generates acid upon exposure, the base component (A) having a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and the fluorine-containing polymeric compound (C′) having a structural unit (c0) which generates acid upon exposure and a structural unit (c1) represented by formula (c1) (wherein R2 represents a divalent linking group, R3 represents a cyclic group containing —SO2— within the ring skeleton, Q0 represents a single bond or a divalent linking group, and R0 represents an organic group which may have a fluorine atom).

    摘要翻译: 一种正性抗蚀剂组合物,包括在酸作用下在碱性显影液中显示出增加的溶解性的基础组分(A),暴露时产生酸的酸产生剂组分(B)和含氟聚合化合物(C') 在曝光时产生酸,具有由通式(a0-1)表示的结构单元(a0-1)的基础组分(A)和由含有酸解离的溶解抑制基团的丙烯酸酯衍生的结构单元(a1) 和具有曝光时产生酸的结构单元(c0)的含氟聚合化合物(C')和由式(c1)表示的结构单元(c1)(其中R 2表示二价连接基团,R 3表示环状基团 在环骨架中含有-SO 2 - ,Q 0表示单键或二价连接基团,R 0表示可以具有氟原子的有机基团)。