公开(公告)号：US20010030292A1

公开(公告)日：2001-10-18

申请号：US09828092

申请日：2001-04-06

Applicant: U.S. PHILIPS CORPORATION

Inventor： Stanley D. Brotherton

IPC: H01L021/00 ,  H01L029/04 ,  H01L031/036 ,  H01L031/0376 ,  H01L031/20 ,  H01L021/84 ,  H01L027/01 ,  H01L031/0392 ,  H01L021/30 ,  H01L021/46 ,  A61N005/00 ,  G21G005/00

CPC classification number: H01L29/66757 ,  H01L29/78675

Abstract: A method of crystallizing a semiconductor film (3) deposited on a supporting substrate (1,2) is disclosed together with apparatus for the same. The method comprising the steps of (a) with a laser (5), exposing each of a series of discrete regions (a to n) of the semiconductor film to one or more laser beam (4) pulses (an nullexposurenull); (b) monitoring the energy output of the laser (5); and (c) if the energy output of the laser (5) during an exposure of a discrete region (a to n) exceeds a predetermined threshold, re-exposing that discrete region to one or more laser beam (4) pulses. Also disclosed is a TFT (12) manufactured by said method and active matrix device (20) comprising a row (24) and column (23) array of active elements (22), each having such a switching TFT (12).

Abstract translation: 公开了沉积在支撑基板（1,2）上的半导体膜（3）的结晶方法及其装置。 该方法包括以下步骤：（a）使用激光（5），将半导体膜的一系列离散区域（a至n）中的每一个暴露于一个或多个激光束（4）脉冲（“曝光”）; （b）监测激光器的能量输出（5）; 和（c）如果在离散区域（a至n）的曝光期间激光器（5）的能量输出超过预定阈值，则将该离散区域再曝光到一个或多个激光束（4）脉冲。 还公开了由所述方法制造的TFT（12）和有源矩阵器件（20），其包括有源元件（22）的行（24）和列（23）阵列，每个具有这种开关TFT（12）。