专利检索 ap:("U.S.A. as represented by the Administrator of the National Aeronautics AND Space Administration") AND inv:"Hyun-Jung Kim" 第 1 页

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发明申请
High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices 审中-公开

公开(公告)号：US20170179233A1

公开(公告)日：2017-06-22

申请号：US15449449

申请日：2017-03-03

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Sang Hyouk Choi , Yeonjoon Park , Glen C. King , Hyun-Jung Kim , Kunik Lee

IPC分类号： H01L29/15 , H01L31/0352 , H01L29/165 , H01L31/0336 , H01L21/02 , H01L29/04

CPC分类号： H01L29/157 , H01L21/0242 , H01L21/02433 , H01L21/0245 , H01L21/02516 , H01L21/02532 , H01L21/02584 , H01L29/045 , H01L29/155 , H01L29/165 , H01L29/7782 , H01L31/0336 , H01L31/035236 , H01L31/03682 , H01L35/22 , Y02E10/546

摘要： An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.