公开(公告)号：US20160380148A1

公开(公告)日：2016-12-29

申请号：US15264083

申请日：2016-09-13

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Yeonjoon Park ,  Sang Hyouk Choi

IPC分类号： H01L33/00 ,  H01L33/16 ,  H01L33/08

CPC分类号： H01L33/0075 ,  H01L27/15 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0087 ,  H01L33/08 ,  H01L33/16

摘要： An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

摘要翻译： 集成的混合晶体发光二极管（“LED”）显示器件，可在单个晶片上发出红色，绿色和蓝色。 各种实施例可以在（0001）c面蓝宝石介质和立方锌掺杂的III-V或II-VI化合物半导体的一侧上提供六边形纤锌矿III-氮化物化合物半导体的双面异质晶体生长 c平面蓝宝石介质。 c面蓝宝石介质可以是任何基板上的大块单晶C平面蓝宝石晶片，薄的独立的c面蓝宝石层或裂纹和键合的c面蓝宝石层。 可以通过将不同量的相同组成分混合到化合物半导体中来改变化合物半导体合金的带隙能量和晶格常数。 可以通过改变立方体IV，III-V族和II-VI族半导体内的六方晶III-氮化物内的合金组成来改造带隙能量和晶格常数。

公开(公告)号：US20170179233A1

公开(公告)日：2017-06-22

申请号：US15449449

申请日：2017-03-03

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Sang Hyouk Choi ,  Yeonjoon Park ,  Glen C. King ,  Hyun-Jung Kim ,  Kunik Lee

IPC分类号： H01L29/15 ,  H01L31/0352 ,  H01L29/165 ,  H01L31/0336 ,  H01L21/02 ,  H01L29/04

CPC分类号： H01L29/157 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02584 ,  H01L29/045 ,  H01L29/155 ,  H01L29/165 ,  H01L29/7782 ,  H01L31/0336 ,  H01L31/035236 ,  H01L31/03682 ,  H01L35/22 ,  Y02E10/546

摘要： An electronic device includes a trigonal crystal substrate defining a (0001) C-plane. The substrate may comprise Sapphire or other suitable material. A plurality of rhombohedrally aligned SiGe (111)-oriented crystals are disposed on the (0001) C-plane of the crystal substrate. A first region of material is disposed on the rhombohedrally aligned SiGe layer. The first region comprises an intrinsic or doped Si, Ge, or SiGe layer. The first region can be layered between two secondary regions comprising n+doped SiGe or n+doped Ge, whereby the first region collects electrons from the two secondary regions.

公开(公告)号：US20170145589A1

公开(公告)日：2017-05-25

申请号：US15358987

申请日：2016-11-22

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Hyun Jung Kim ,  Sang Hyouk Choi

IPC分类号： C30B23/08 ,  H01L21/02 ,  C30B29/20 ,  C30B23/06 ,  C30B29/52

CPC分类号： C30B23/08 ,  C30B23/066 ,  C30B29/52 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02658

摘要： Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice.

公开(公告)号：US20140339580A1

公开(公告)日：2014-11-20

申请号：US14279614

申请日：2014-05-16

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Yeonjoon Park ,  Sang Hyouk Choi

IPC分类号： H01L33/08 ,  H01L33/00

CPC分类号： H01L33/0075 ,  H01L27/15 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0087 ,  H01L33/08 ,  H01L33/16

摘要： An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.

摘要翻译： 集成的混合晶体发光二极管（“LED”）显示器件，可在单个晶片上发出红色，绿色和蓝色。 各种实施例可以在（0001）c面蓝宝石介质和立方锌掺杂的III-V或II-VI化合物半导体的一侧上提供六边形纤锌矿III-氮化物化合物半导体的双面异质晶体生长 c平面蓝宝石介质。 c面蓝宝石介质可以是任何基板上的大块单晶C平面蓝宝石晶片，薄的独立的c面蓝宝石层或裂纹和键合的c面蓝宝石层。 可以通过将不同量的相同组成分混合到化合物半导体中来改变化合物半导体合金的带隙能量和晶格常数。 可以通过改变立方体IV，III-V族和II-VI族半导体内的六方晶III-氮化物内的合金组成来改造带隙能量和晶格常数。

公开(公告)号：US20140264325A1

公开(公告)日：2014-09-18

申请号：US14204535

申请日：2014-03-11

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Yeonjoon Park ,  Sang Hyouk Choi

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/20 ,  H01L29/22

CPC分类号： H01L21/0242 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/2011 ,  H01L21/2053 ,  H01L21/2056 ,  H01L25/167 ,  H01L27/15 ,  H01L29/267 ,  H01L31/028 ,  H01L31/0336 ,  H01L31/03682 ,  H01L31/125 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

摘要翻译： 本发明的一个方面是一种双面混合晶体结构，其包括具有（0001）C面并具有正面和背面的三角形蓝宝石晶片。 蓝宝石晶片对可见光和红外光谱的光线基本上是透明的，并且还提供了关于电磁射频噪声的绝缘。 在（0001）C面上具有与立方晶体方向对准的立方菱形结构的晶体Si材料层，并应变为菱面体，从而使选定的（SiGe）器件能够连续地集成到蓝宝石的后侧 晶圆。 双面混合晶体结构还包括在蓝宝石晶片的正面上的集成III-氮化物晶体层，其能够在蓝宝石晶片的正面上连续地集成所选择的III-氮化物器件。

公开(公告)号：US20170004962A1

公开(公告)日：2017-01-05

申请号：US15264034

申请日：2016-09-13

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Yeonjoon Park ,  Sang Hyouk Choi

IPC分类号： H01L21/02 ,  H01L29/267 ,  H01L31/12 ,  H01L33/00 ,  H01L31/18

CPC分类号： H01L21/0242 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/2011 ,  H01L21/2053 ,  H01L21/2056 ,  H01L25/167 ,  H01L27/15 ,  H01L29/267 ,  H01L31/028 ,  H01L31/0336 ,  H01L31/03682 ,  H01L31/125 ,  H01L31/1804 ,  H01L31/1812 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/00

摘要： One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

摘要翻译： 本发明的一个方面是一种双面混合晶体结构，其包括具有（0001）C面并具有正面和背面的三角形蓝宝石晶片。 蓝宝石晶片对可见光和红外光谱的光线基本上是透明的，并且还提供了关于电磁射频噪声的绝缘。 在（0001）C面上具有与立方晶体方向对准的立方菱形结构的晶体Si材料层，并应变为菱面体，从而使选定的（SiGe）器件能够连续地集成到蓝宝石的后侧 晶圆。 双面混合晶体结构还包括在蓝宝石晶片的正面上的集成III-氮化物晶体层，其能够在蓝宝石晶片的正面上连续地集成所选择的III-氮化物器件。

公开(公告)号：US20170178903A1

公开(公告)日：2017-06-22

申请号：US15386592

申请日：2016-12-21

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Sang Hyouk Choi ,  Adam J. Duzik

IPC分类号： H01L21/02 ,  C30B29/20 ,  C30B23/06 ,  C30B29/52 ,  H01L29/161 ,  C30B23/08

CPC分类号： H01L21/02532 ,  C30B23/063 ,  C30B23/08 ,  C30B29/06 ,  C30B29/08 ,  C30B29/20 ,  C30B29/52 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02598 ,  H01L21/02609 ,  H01L21/02617 ,  H01L29/161

摘要： Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.

公开(公告)号：US20160225476A1

公开(公告)日：2016-08-04

申请号：US15014608

申请日：2016-02-03

申请人： U.S.A., as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Sang Hyouk Choi ,  Kunik LEE ,  Yeonjoon PARK ,  Hyun Jung KIM

IPC分类号： G21H1/10 ,  H02N11/00

CPC分类号： G21H1/103 ,  G21H1/04 ,  G21H1/10 ,  G21H1/106

摘要： Systems, methods, and devices of the various embodiments described herein enable an energy conversion system comprising a radioactive element for generating conduction-band electrons in an avalanche cell and generating heat, wherein the conduction-band electrons are provided to an anode to generate avalanche cell power, and the heat is provided to a thermoelectric generator to generate thermoelectric power. In an embodiment, the avalanche cell is irradiated with gamma rays, which excite electrons within the avalanche cell, generating a current. In an additional embodiment, the thermoelectric power and avalanche cell power can comprise a dual power system.

摘要翻译： 本文描述的各种实施例的系统，方法和装置能够实现能量转换系统，其包括用于在雪崩电池中产生导带电子并产生热量的放射性元件，其中导带电子被提供给阳极以产生雪崩电池 功率，并且将热量提供给热电发电机以产生热电力。 在一个实施例中，雪崩单元用伽马射线照射，伽马射线激发雪崩单元内的电子，产生电流。 在另外的实施例中，热电功率和雪崩电池功率可以包括双电源系统。

公开(公告)号：US10858754B2

公开(公告)日：2020-12-08

申请号：US15358987

申请日：2016-11-22

申请人： U.S.A. as represented by the Administrator of the National Aeronautics and Space Administration

发明人： Hyun Jung Kim ,  Sang Hyouk Choi

IPC分类号： C30B23/06 ,  C30B23/08 ,  C30B29/52 ,  H01L21/02

摘要： Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice.