IMAGE DETECTOR
    1.
    发明申请

    公开(公告)号:US20230032758A1

    公开(公告)日:2023-02-02

    申请号:US17872661

    申请日:2022-07-25

    Inventor: Hsien-Te CHEN

    Abstract: An image detector includes a substrate, a circuit layer, a plurality of light detecting elements, a plurality of driving elements and a crystal scintillation layer. The substrate has a surface. The circuit layer is arranged on the surface of the substrate, and defines a plurality of detecting areas arranged in an array. The light detecting elements and the driving elements are disposed at the detecting areas and electrically connected with the circuit layer. Each driving element drives one or more of the light detecting elements. The crystal scintillation layer is arranged opposite to the substrate and covers the detecting areas. The light detecting elements and the driving elements connect with the surface of the substrate. At least one of the light detecting elements and the driving elements is formed by a process different from the process of forming the circuit layer on the substrate.

    MANUFACTURING METHOD OF OPTOELECTRONIC SEMICONDUCTOR DEVICE

    公开(公告)号:US20190280151A1

    公开(公告)日:2019-09-12

    申请号:US16291808

    申请日:2019-03-04

    Inventor: Hsien-Te CHEN

    Abstract: A manufacturing method of an optoelectronic semiconductor device includes: providing a matrix substrate, which comprises a substrate and a matrix circuit disposed on the substrate; transferring a plurality of micro-sized optoelectronic semiconductor elements from a temporary substrate to the matrix substrate, wherein the micro-sized optoelectronic semiconductor elements are separately disposed on the matrix substrate, and at least one electrode of each micro-sized optoelectronic semiconductor element is electrically connected with the matrix circuit; forming a protective layer completely covering the micro-sized optoelectronic semiconductor elements, wherein the height of the protective layer is greater than the height of the micro-sized optoelectronic semiconductor elements; and grinding the protective layer until a residual on a back surface of each micro-sized optoelectronic semiconductor element and the back surface are removed to expose a new surface.

    ELECTRONIC DEVICE MANUFACTURING SYSTEM AND METHOD

    公开(公告)号:US20240235141A1

    公开(公告)日:2024-07-11

    申请号:US18404257

    申请日:2024-01-04

    Inventor: Hsien-Te CHEN

    CPC classification number: H01R43/0221

    Abstract: An electronic device manufacturing system includes a fixture, a target platform, wire mechanisms and a wire breaking mechanism. The fixture has a substrate defining plural channels. The target platform is located at one side of the fixture and defines a plane and plural target positions. Each wire mechanism has a shaft and a wire. The channels of the fixture correspond to at least part of the target positions, and the wire mechanisms correspond to the channels, respectively. The wire of each wire mechanism passes through the corresponding channel, and the fixed end thereof is located at the other side of the fixture, while the free end thereof is located on the target platform and corresponds to one of the target positions. The wire breaking mechanism is located between the fixture and the target platform for cutting the wires so as to form plural wire segments.

    ELECTRONIC DETECTION INTERFACE AND ELECTRONIC DETECTION MODULE USING THE SAME

    公开(公告)号:US20240079438A1

    公开(公告)日:2024-03-07

    申请号:US18505463

    申请日:2023-11-09

    Inventor: Hsien-Te CHEN

    CPC classification number: H01L27/14636 H01L27/14603

    Abstract: An electronic detection interface for testing micro photoelectric chips or micro semiconductor chips comprises a substrate structure and a plurality of detection units in array, responsive to the micro photoelectric chips or the micro semiconductor chips. The substrate structure includes a circuit layer, which comprises a plurality of circuit units in array. The detection units are disposed on a surface of the substrate structure, and are corresponded to the circuit units in a respect manner. Each of the detection units includes at least one resilient conductive pillar, which is electrically connected to each of the circuit units. Each of the resilient conductive pillars comprises a non-conductive photoresist and a conductive layer entirely covering the non-conductive photoresist.

    PHOTOELECTRIC DEVICE
    5.
    发明申请

    公开(公告)号:US20210202281A1

    公开(公告)日:2021-07-01

    申请号:US17117352

    申请日:2020-12-10

    Inventor: Hsien-Te CHEN

    Abstract: A photoelectric device includes a target substrate, a circuit pattern layer disposed on the target substrate, a plurality of micro photoelectric elements electrically connected to the circuit pattern layer, and a supplemental repair element electrically connected to the circuit pattern layer. The target substrate is configured with a plurality of connection positions and a repair position disposed with an offset with relative to a corresponding one of the connection positions. The offset is greater than or equal to zero. The micro photoelectric elements are individually disposed on at least a part of the connection positions of the target substrate. The supplemental repair element has an electrode disposed on the repair position of the target substrate, and the electrode is connected to the circuit pattern layer. On the target substrate, the supplemental repair element is arbitrary with respect to the micro photoelectric elements.

    METHOD OF USING OPTOELECTRONIC SEMICONDUCTOR STAMP TO MANUFACTURE OPTOELECTRONIC SEMICONDUCTOR DEVICE

    公开(公告)号:US20210111148A1

    公开(公告)日:2021-04-15

    申请号:US17131092

    申请日:2020-12-22

    Inventor: Hsien-Te CHEN

    Abstract: A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.

    OPTOELECTRONIC SEMICONDUCTOR STAMP AND MANUFACTURING METHOD THEREOF, AND OPTOELECTRONIC SEMICONDUCTOR

    公开(公告)号:US20190189477A1

    公开(公告)日:2019-06-20

    申请号:US16224277

    申请日:2018-12-18

    Inventor: Hsien-Te CHEN

    Abstract: An optoelectronic semiconductor stamp and a manufacturing method thereof, and an optoelectronic semiconductor device are disclosed. The manufacturing method comprises the following steps: pressing an optoelectronic semiconductor substrate to an UV tape, wherein the electrodes of a plurality of optoelectronic semiconductor components are adhered to the UV tape; removing the epitaxial substrate, wherein at least a part of the optoelectronic semiconductor components are adhered to the UV tape; decreasing adhesion of at least a part of the UV tape; and picking up at least a part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion by a heat conductive substrate, wherein the part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion is removed from the UV tape so as to obtain an optoelectronic semiconductor stamp.

    METHOD OF BATCH TRANSFERRING MICRO SEMICONDUCTOR STRUCTURES

    公开(公告)号:US20190035688A1

    公开(公告)日:2019-01-31

    申请号:US16045072

    申请日:2018-07-25

    Inventor: Hsien-Te CHEN

    Abstract: A method of batch transferring micro semiconductor structures is provided. The method utilizes the selective laser lift-off (selective LLO) technology, and the micro semiconductor structures are selected in batch during the selective LLO process. Thus, the following transferring step does not need to prepare the concave patterns in advance, thereby avoiding the technical difficult derived by the micro-contact printing process.

    ELECTRONIC DEVICE
    10.
    发明公开
    ELECTRONIC DEVICE 审中-公开

    公开(公告)号:US20240347544A1

    公开(公告)日:2024-10-17

    申请号:US18631546

    申请日:2024-04-10

    Inventor: Hsien-Te CHEN

    CPC classification number: H01L27/124 H01L23/50 H01L23/5384 H01L25/167

    Abstract: An electronic device includes a substrate, a plurality of functional units, a wiring unit and a plurality of conductive members. The substrate has a first surface and a second surface opposite to the first surface. The functional units are defined on the first surface of the substrate, and each functional unit includes one or more semiconductor components. The wiring unit is arranged on the second surface of the substrate. The wiring unit includes a plurality of circuits, and the circuits are provided corresponding to the functional units. The conductive members are arranged corresponding to the circuits, and each conductive member electrically connects the semiconductor component(s) of one corresponding functional unit to the corresponding circuit of the wiring unit. The semiconductor component(s) of the corresponding functional unit and the corresponding circuit of the wiring unit are at least partially overlapped.

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