公开(公告)号：US11955453B2

公开(公告)日：2024-04-09

申请号：US17583364

申请日：2022-01-25

Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

Inventor： Hsien-Te Chen

IPC: H01L23/00 ,  H01L25/04 ,  H01L25/075

CPC classification number: H01L24/73 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L25/0753 ,  H01L25/042 ,  H01L2224/1601 ,  H01L2224/16221 ,  H01L2224/17134 ,  H01L2224/2919 ,  H01L2224/32053 ,  H01L2224/32055 ,  H01L2224/32056 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32221 ,  H01L2224/33051 ,  H01L2224/33132 ,  H01L2224/33133 ,  H01L2224/73204 ,  H01L2924/12041 ,  H01L2924/12043

Abstract: An electronic device includes a substrate, a plurality of micro semiconductor structure, a plurality of conductive members, and a non-conductive portion. The substrate has a first surface and a second surface opposite to each other. The micro semiconductor structures are distributed on the first surface of the substrate. The conductive members electrically connect the micro semiconductor structures to the substrate. Each conductive member is defined by an electrode of one of the micro semiconductor structures and a corresponding conductive pad on the substrate. The non-conductive portion is arranged on the first surface of the substrate. The non-conductive portion includes one or more non-conductive members, and the one or more non-conductive members are attached to the corresponding one or more conductive members of the one or more micro conductive structures.

公开(公告)号：US20230032758A1

公开(公告)日：2023-02-02

申请号：US17872661

申请日：2022-07-25

Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

Inventor： Hsien-Te CHEN

IPC: G01T1/20 ,  G01T1/202

Abstract: An image detector includes a substrate, a circuit layer, a plurality of light detecting elements, a plurality of driving elements and a crystal scintillation layer. The substrate has a surface. The circuit layer is arranged on the surface of the substrate, and defines a plurality of detecting areas arranged in an array. The light detecting elements and the driving elements are disposed at the detecting areas and electrically connected with the circuit layer. Each driving element drives one or more of the light detecting elements. The crystal scintillation layer is arranged opposite to the substrate and covers the detecting areas. The light detecting elements and the driving elements connect with the surface of the substrate. At least one of the light detecting elements and the driving elements is formed by a process different from the process of forming the circuit layer on the substrate.

公开(公告)号：US11538785B2

公开(公告)日：2022-12-27

申请号：US17131092

申请日：2020-12-22

Applicant: Ultra Display Technology Corp.

Inventor： Hsien-Te Chen

IPC: H01L23/00

Abstract: A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.

公开(公告)号：US10854566B2

公开(公告)日：2020-12-01

申请号：US16561546

申请日：2019-09-05

Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

Inventor： Hsien-Te Chen

IPC: H01L23/52 ,  H01L23/00 ,  H01L33/62

Abstract: A pre-conductive array disposed on a target circuit substrate comprises a plurality of conductive electrode groups disposed on the target circuit substrate, and at least a conductive particle dispose on each of conductive electrodes of a part or all of the conductive electrode groups. The at least a conductive particle and the corresponding conductive electrode form a pre-conductive structure, and the pre-conductive structures form the pre-conductive array.

公开(公告)号：US20190280151A1

公开(公告)日：2019-09-12

申请号：US16291808

申请日：2019-03-04

Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

Inventor： Hsien-Te CHEN

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/52

Abstract: A manufacturing method of an optoelectronic semiconductor device includes: providing a matrix substrate, which comprises a substrate and a matrix circuit disposed on the substrate; transferring a plurality of micro-sized optoelectronic semiconductor elements from a temporary substrate to the matrix substrate, wherein the micro-sized optoelectronic semiconductor elements are separately disposed on the matrix substrate, and at least one electrode of each micro-sized optoelectronic semiconductor element is electrically connected with the matrix circuit; forming a protective layer completely covering the micro-sized optoelectronic semiconductor elements, wherein the height of the protective layer is greater than the height of the micro-sized optoelectronic semiconductor elements; and grinding the protective layer until a residual on a back surface of each micro-sized optoelectronic semiconductor element and the back surface are removed to expose a new surface.

公开(公告)号：US20210111148A1

公开(公告)日：2021-04-15

申请号：US17131092

申请日：2020-12-22

Applicant: Ultra Display Technology Corp.

Inventor： Hsien-Te CHEN

IPC: H01L23/00

Abstract: A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.

公开(公告)号：US10796628B2

公开(公告)日：2020-10-06

申请号：US16172463

申请日：2018-10-26

Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

Inventor： Hsien-Te Chen

IPC: G09G3/34 ,  H04N5/367 ,  G09G3/32

Abstract: A luminance compensation method of a light-emitting device is disclosed. The light-emitting device has a plurality of light-emitting elements. The luminance compensation method includes following steps of: obtaining a position of at least one of the light-emitting elements in a brightness anomalous status; and changing a brightness of at least one of the light-emitting elements disposed adjacent to the light-emitting element in the brightness anomalous status for compensating a brightness of the light-emitting elements in the brightness anomalous status.

公开(公告)号：US20190189477A1

公开(公告)日：2019-06-20

申请号：US16224277

申请日：2018-12-18

Applicant: Ultra Display Technology Corp.

Inventor： Hsien-Te CHEN

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67132 ,  H01L21/6835 ,  H01L2221/68322 ,  H01L2221/68363

Abstract: An optoelectronic semiconductor stamp and a manufacturing method thereof, and an optoelectronic semiconductor device are disclosed. The manufacturing method comprises the following steps: pressing an optoelectronic semiconductor substrate to an UV tape, wherein the electrodes of a plurality of optoelectronic semiconductor components are adhered to the UV tape; removing the epitaxial substrate, wherein at least a part of the optoelectronic semiconductor components are adhered to the UV tape; decreasing adhesion of at least a part of the UV tape; and picking up at least a part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion by a heat conductive substrate, wherein the part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion is removed from the UV tape so as to obtain an optoelectronic semiconductor stamp.

公开(公告)号：US20190035688A1

公开(公告)日：2019-01-31

申请号：US16045072

申请日：2018-07-25

Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

Inventor： Hsien-Te CHEN

IPC: H01L21/78 ,  H01L21/56 ,  H01L21/683

Abstract: A method of batch transferring micro semiconductor structures is provided. The method utilizes the selective laser lift-off (selective LLO) technology, and the micro semiconductor structures are selected in batch during the selective LLO process. Thus, the following transferring step does not need to prepare the concave patterns in advance, thereby avoiding the technical difficult derived by the micro-contact printing process.

公开(公告)号：US20180068995A1

公开(公告)日：2018-03-08

申请号：US15696541

申请日：2017-09-06

Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

Inventor： Yoshitaka KAJIYAMA

IPC: H01L25/00 ,  H01L25/13 ,  H01L21/683

CPC classification number: H01L25/50 ,  H01L21/6835 ,  H01L25/0753 ,  H01L25/13 ,  H01L33/50 ,  H01L33/60 ,  H01L2933/0058

Abstract: An optoelectronic semiconductor device and a manufacturing method are disclosed. The manufacturing method includes steps of: a step of providing a microsized optoelectronic semiconductor element, a step of providing a matrix substrate, a step of electrode alignment and lamination, a step of electrode coupling, a step of illumination and lift-off and a step of removal. The step of electrode coupling is to provide a first light to concentratedly illuminate at least some of the junctions between the first electrodes and the third electrodes or concentratedly illuminate at least some of the junctions between the second electrodes and the fourth electrodes. The step of illumination and lift-off is to provide a second light to concentratedly illuminate at least some of the interfaces between the microsized optoelectronic semiconductor elements and the epitaxial substrate to make the microsized optoelectronic semiconductor elements illuminated by the second light peel off the epitaxial substrate.