公开(公告)号：US20230094739A1

公开(公告)日：2023-03-30

申请号：US17510392

申请日：2021-10-26

申请人： UNITED MICROELECTRONICS CORP.

发明人： CHUNYUAN QI ,  Sheng Zhang ,  XINGXING CHEN ,  Chien-Kee Pang

IPC分类号： H01L29/786 ,  H01L29/10 ,  H01L29/16

摘要： An silicon-on-insulator substrate is provided in the present invention, including a handler, a polysilicon trap-rich layer formed on the handler, an oxide layer formed on the polysilicon trap-rich layer and a monocrystalline silicon layer formed directly on the oxide layer, wherein a bonding interface is between the monocrystalline silicon layer and the oxide layer.

公开(公告)号：US20240266393A1

公开(公告)日：2024-08-08

申请号：US18119797

申请日：2023-03-09

申请人： UNITED MICROELECTRONICS CORP.

发明人： CHUNYUAN QI ,  XINGXING CHEN ,  ZHUONA MA ,  HUI LIU

IPC分类号： H01L29/06 ,  H01L21/308 ,  H01L27/12 ,  H01L29/16

CPC分类号： H01L29/0657 ,  H01L21/3086 ,  H01L27/1203 ,  H01L29/1604

摘要： A metasurface structure includes a substrate having a first region and a second region not overlapping with the first region; a first pillar element within the first region on the substrate; and a second pillar element within the second region on the substrate. The first pillar element has a first sectional profile and the second pillar element has a second sectional profile that is different from the first sectional profile. At least one of the first sectional profile and the second sectional profile is of a non-rectangular shape.