公开(公告)号：US20240321973A1

公开(公告)日：2024-09-26

申请号：US18138728

申请日：2023-04-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Hua Yang ,  Chih-Chien CHANG ,  Shen-De WANG ,  JIANJUN YANG ,  Wei Ta ,  Yuan-Hsiang Chang

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H10B41/35

CPC classification number: H01L29/404 ,  H01L29/401 ,  H01L29/66681 ,  H01L29/66825 ,  H01L29/7816 ,  H10B41/35

Abstract: A power metal-oxide-semiconductor structure includes a semiconductor substrate, a gate electrode disposed above the semiconductor substrate, a field plate, and an electrically conductive pattern. The gate electrode and the field plate are disposed above the semiconductor substrate, the electrically conductive pattern is disposed between the field plate and the semiconductor substrate in a vertical direction, and the field plate and the electrically conductive pattern are located at the same side of the gate electrode in a horizontal direction. A manufacturing method of a power metal-oxide-semiconductor structure includes the following steps. The electrically conductive pattern and the field plate are formed above a first region of the semiconductor substrate. Subsequently, the gate electrode is formed above the first region of the semiconductor substrate.