公开(公告)号：US09147033B2

公开(公告)日：2015-09-29

申请号：US14024533

申请日：2013-09-11

Applicant: United Microelectronics Corp.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo ,  Hua-Biao Wu

IPC: G06F17/50 ,  G06F17/30

CPC classification number: G06F17/5081 ,  G03F1/38

Abstract: A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.

Abstract translation: 提供了制作光掩模布局的方法。 提供光掩模的图形数据。 图形数据包括至少一个矩形图案。 通过使用计算机对图形数据执行校正步骤。 校正步骤包括在矩形图案内部添加大致环形图案。 还提供了通过使用通过所述方法获得的光掩模布局形成光掩模的方法。 在一个实施例中，光掩模适用于定义固态图像传感器的微透镜。

公开(公告)号：US20150089460A1

公开(公告)日：2015-03-26

申请号：US14561196

申请日：2014-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract translation: 通过光刻法进行用于制备投影在晶片上的掩模的光学邻近校正的方法包括以下步骤。 获得包括第一特征和第二特征的集成电路布局设计，其中第一特征与晶片中的两个结构的第一边界重叠。 识别与具有趋势部分的实验图表的具体趋势部分相邻的第二特征的第一特征的边缘。 根据与特定趋势部分对应的规则，通过计算机系统对边缘进行光学接近校正值的评估。 布局设计用光学接近校正值补偿。

公开(公告)号：US08661372B1

公开(公告)日：2014-02-25

申请号：US13757856

申请日：2013-02-04

Applicant: United Microelectronics Corp.

Inventor： Jie Zhao

IPC: G06F17/50

CPC classification number: G03F1/36 ,  G06F17/5081 ,  G06F2217/12 ,  Y02P90/265

Abstract: The present invention provides an OPC method. First, a mask pattern is provided. A first region and a second region are detected in the mask pattern. The mask pattern comprises at least a first pattern in the first region and a second pattern in the second pattern, and the first pattern with a first width, a first gap with a first space, the second pattern with a second width and a second gap with a second space are disposed in sequence, wherein the second space value is substantially 2.5 to 3.5 times the value of the first width. Then, a modification process is performed by changing the arrangement of the mask pattern thereby making the mask pattern become a revised pattern, so the first pattern is not influenced by light passing through the second gap during an exposure process. Finally, the revised pattern is outputted onto a mask.

Abstract translation: 本发明提供一种OPC方法。 首先，提供掩模图案。 在掩模图案中检测第一区域和第二区域。 掩模图案包括第一区域中的至少第一图案和第二图案中的第二图案，以及具有第一宽度的第一图案，具有第一空间的第一间隙，具有第二宽度的第二图案和第二间隙 其中第二空间依次布置，其中第二空间值基本上是第一宽度值的2.5至3.5倍。 然后，通过改变掩模图案的布置来进行修改处理，从而使掩模图案变为修改图案，因此在曝光处理期间第一图案不受穿过第二间隙的光的影响。 最后，将修改后的图案输出到掩模上。

公开(公告)号：US09305130B2

公开(公告)日：2016-04-05

申请号：US14445037

申请日：2014-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jie Zhao ,  Huabiao Wu

IPC: H01L29/66 ,  G06F17/50 ,  H01L29/78 ,  H01L29/417

CPC classification number: G06F17/5072 ,  G06F17/5068 ,  H01L29/41758 ,  H01L29/78 ,  Y10T428/24612

Abstract: A method for forming semiconductor layout patterns providing a pair of first layout patterns being symmetrical along an axial line, each of the first layout patterns comprising a first side proximal to the axial line and a second side far from the axial line; shifting a portion of the first layout patterns toward a direction opposite to the axial line to form at least a first shifted portion in each first layout pattern, and outputting the first layout patterns and the first shifted portions on a first mask.

Abstract translation: 一种用于形成半导体布局图案的方法，其提供沿着轴线对称的一对第一布局图案，所述第一布局图案中的每一个包括靠近所述轴线的第一侧和远离所述轴线的第二侧; 将所述第一布局图案的一部分朝着与所述轴线相反的方向移动，以在每个第一布局图案中形成至少第一偏移部分，并将所述第一布局图案和所述第一偏移部分输出在第一掩模上。

公开(公告)号：US08938697B1

公开(公告)日：2015-01-20

申请号：US14010554

申请日：2013-08-27

Applicant: United Microelectronics Corp.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design comprising a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system by a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract translation: 通过光刻法进行用于制备投影在晶片上的掩模的光学邻近校正的方法包括以下步骤。 获得包括第一特征和第二特征的集成电路布局设计，其中第一特征与晶片中的两个结构的第一边界重叠。 识别与具有趋势部分的实验图表的具体趋势部分相邻的第二特征的第一特征的边缘。 通过与特定趋势部分对应的规则通过计算机系统对边缘进行光学邻近校正值的评估。 布局设计用光学接近校正值补偿。

公开(公告)号：US20140337809A1

公开(公告)日：2014-11-13

申请号：US14445037

申请日：2014-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jie Zhao ,  Huabiao Wu

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5068 ,  H01L29/41758 ,  H01L29/78 ,  Y10T428/24612

Abstract: A method for forming semiconductor layout patterns providing a pair of first layout patterns being symmetrical along an axial line, each of the first layout patterns comprising a first side proximal to the axial line and a second side far from the axial line; shifting a portion of the first layout patterns toward a direction opposite to the axial line to form at least a first shifted portion in each first layout pattern, and outputting the first layout patterns and the first shifted portions on a first mask.

Abstract translation: 一种用于形成半导体布局图案的方法，其提供沿着轴线对称的一对第一布局图案，所述第一布局图案中的每一个包括靠近所述轴线的第一侧和远离所述轴线的第二侧; 将所述第一布局图案的一部分朝着与所述轴线相反的方向移动，以在每个第一布局图案中形成至少第一偏移部分，并将所述第一布局图案和所述第一偏移部分输出在第一掩模上。

公开(公告)号：US09256120B2

公开(公告)日：2016-02-09

申请号：US14561196

申请日：2014-12-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G03F1/36

Abstract: A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Abstract translation: 通过光刻法进行用于制备投影在晶片上的掩模的光学邻近校正的方法包括以下步骤。 获得包括第一特征和第二特征的集成电路布局设计，其中第一特征与晶片中的两个结构的第一边界重叠。 识别与具有趋势部分的实验图表的具体趋势部分相邻的第二特征的第一特征的边缘。 根据与特定趋势部分对应的规则，通过计算机系统对边缘进行光学接近校正值的评估。 布局设计用光学接近校正值补偿。

公开(公告)号：US20150074620A1

公开(公告)日：2015-03-12

申请号：US14024533

申请日：2013-09-11

Applicant: United Microelectronics Corp.

Inventor： Jie Zhao ,  Chia-Ping Chen ,  Ching-Shu Lo ,  Hua-Biao Wu

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/38

Abstract: A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.

Abstract translation: 提供了制作光掩模布局的方法。 提供光掩模的图形数据。 图形数据包括至少一个矩形图案。 通过使用计算机对图形数据执行校正步骤。 校正步骤包括在矩形图案内部添加大致环形图案。 还提供了通过使用通过所述方法获得的光掩模布局形成光掩模的方法。 在一个实施例中，光掩模适用于定义固态图像传感器的微透镜。