公开(公告)号：US20220271157A1

公开(公告)日：2022-08-25

申请号：US17224108

申请日：2021-04-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yen Feng ,  Chen-An Kuo ,  Ching-Wei Teng ,  Po-Chun Lai

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/45 ,  H01L21/285 ,  H01L21/74 ,  H01L29/66

Abstract: An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.

公开(公告)号：US11616139B2

公开(公告)日：2023-03-28

申请号：US17224108

申请日：2021-04-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yen Feng ,  Chen-An Kuo ,  Ching-Wei Teng ,  Po-Chun Lai

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L21/285 ,  H01L21/74 ,  H01L29/45

Abstract: An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.

公开(公告)号：US09929056B1

公开(公告)日：2018-03-27

申请号：US15359389

申请日：2016-11-22

Applicant: United Microelectronics Corp.

Inventor： Te-Chiu Tsai ,  Shih-Yin Hsiao ,  Ching-Wei Teng ,  Tun-Jen Cheng ,  Hung-Yi Tsai ,  Shan-Shi Huang

IPC: H01L21/3205 ,  H01L21/8234 ,  H01L21/28 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/823462 ,  H01L21/32 ,  H01L21/823456

Abstract: A method for forming gate structures for a HV device and a MV device is provided. The method includes forming a HV oxide layer on the substrate, covering a first region predetermined for forming the HV device. Further in the method, a dielectric mask is formed on a central portion of the HV oxide layer. A thermal oxidation process is performed to form a MV oxide layer on the substrate at a second region predetermined for forming the MV device, wherein peripheral portions of the HV oxide layer not covered by the dielectric mask grow thicker. The dielectric mask is removed. A conductive layer is formed over the substrate. The conductive layer, the HV oxide layer, the MV oxide layer are patterned to form the gate structures.

公开(公告)号：US11670713B2

公开(公告)日：2023-06-06

申请号：US17884599

申请日：2022-08-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yen Feng ,  Chen-An Kuo ,  Ching-Wei Teng ,  Po-Chun Lai

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/10 ,  H01L29/66 ,  H01L21/285 ,  H01L21/74 ,  H01L29/45

CPC classification number: H01L29/7816 ,  H01L21/28518 ,  H01L21/743 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/45 ,  H01L29/66681

Abstract: An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.

公开(公告)号：US20220384638A1

公开(公告)日：2022-12-01

申请号：US17884599

申请日：2022-08-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Yen Feng ,  Chen-An Kuo ,  Ching-Wei Teng ,  Po-Chun Lai

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/45 ,  H01L21/285 ,  H01L21/74

Abstract: An LDMOS includes a semiconductor substrate. A well is disposed within the semiconductor substrate. A body region is disposed within the well. A first gate electrode is disposed on the semiconductor substrate. A source electrode is disposed at one side of the first gate electrode. The source electrode includes a source contact area and numerous vias. The vias connect to the source contact area. The vias extend into the semiconductor substrate. A first drain electrode is disposed at another side of the first gate electrode and is opposed to the source electrode.