公开(公告)号：US20160147140A1

公开(公告)日：2016-05-26

申请号：US14601250

申请日：2015-01-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Hsien Hsieh ,  Ming-Jui Chen ,  Cheng-Te Wang ,  Jing-Yi Lee ,  Jian-Yuan Ma ,  Yan-Chun Chen

IPC: G03F1/36 ,  G03F1/72 ,  H01L21/308 ,  G03F1/84 ,  H01L21/66 ,  H01L21/027

CPC classification number: G03F1/36 ,  G03F1/70 ,  G03F1/72 ,  G03F1/84

Abstract: The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.

Abstract translation: 本发明提供一种模式验证方法。 首先，将目标图案分解为第一图案和第二图案。 对第一图案执行第一OPC处理以形成第一修订图案，并且对第二图案执行第二OPC处理以形成第二修改图案。 执行检查过程，其中检查过程包括后掩模检查（AMI）处理，其包括考虑目标图案，第一图案和第二图案。

公开(公告)号：US09785046B2

公开(公告)日：2017-10-10

申请号：US14601250

申请日：2015-01-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Hsien Hsieh ,  Ming-Jui Chen ,  Cheng-Te Wang ,  Jing-Yi Lee ,  Jian-Yuan Ma ,  Yan-Chun Chen

IPC: G03F1/72 ,  G03F1/84 ,  G03F1/36 ,  G03F1/70

CPC classification number: G03F1/36 ,  G03F1/70 ,  G03F1/72 ,  G03F1/84

Abstract: The present invention provides a pattern verifying method. First, a target pattern is decomposed into a first pattern and a second pattern. A first OPC process is performed for the first pattern to form a first revised pattern, and a second OPC process is performed for the second pattern to form a second revised pattern. An inspection process is performed, wherein the inspection process comprises an after mask inspection (AMI) process, which comprises considering the target pattern, the first pattern and the second pattern.