公开(公告)号：US20170213854A1

公开(公告)日：2017-07-27

申请号：US15006123

申请日：2016-01-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： LANXIANG WANG ,  Hong Liao ,  CHAO JIANG

IPC: H01L27/12 ,  H01L21/77 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L21/77 ,  H01L27/1218 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L2021/775

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first region and a second region; forming a gate layer on the substrate; forming a first gate dielectric layer on the gate layer; forming a first channel layer on the first region and a second channel layer on the second region; and forming a first source/drain on the first channel layer and a second source/drain on the second channel layer.