公开(公告)号：US20140094017A1

公开(公告)日：2014-04-03

申请号：US13633104

申请日：2012-10-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wu-Sian Sie ,  Chun-Wei Hsu ,  Chia-Lung Chang ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yu-Ting Li ,  Wei-Che Tsao ,  Yen-Ming Chen ,  Chun-Hsiung Wang ,  Chia-Lin Hsu

IPC: H01L21/762

CPC classification number: H01L21/76232 ,  H01L21/76229

Abstract: A manufacturing method for a shallow trench isolation. First, a substrate is provided, a hard mask layer and a patterned photoresist layer are sequentially formed on the substrate, at least one trench is then formed in the substrate through an etching process, the hard mask layer is removed. Afterwards, a filler is formed at least in the trench and a planarization process is then performed on the filler. Since the planarization process is performed only on the filler, so the dishing phenomenon can effectively be avoided.

Abstract translation: 浅沟槽隔离的制造方法。 首先，提供基板，在基板上依次形成硬掩模层和图案化光致抗蚀剂层，然后通过蚀刻工艺在基板中形成至少一个沟槽，去除硬掩模层。 然后，至少在沟槽中形成填料，然后对填料进行平面化处理。 由于仅在填料上进行平坦化处理，所以可以有效地避免凹陷现象。

公开(公告)号：US09012300B2

公开(公告)日：2015-04-21

申请号：US13633104

申请日：2012-10-01

Applicant: United Microelectronics Corp.

Inventor： Wu-Sian Sie ,  Chun-Wei Hsu ,  Chia-Lung Chang ,  Chih-Hsun Lin ,  Chang-Hung Kung ,  Yu-Ting Li ,  Wei-Che Tsao ,  Yen-Ming Chen ,  Chun-Hsiung Wang ,  Chia-Lin Hsu

IPC: H01L21/76 ,  H01L21/762

CPC classification number: H01L21/76232 ,  H01L21/76229

Abstract: A manufacturing method for a shallow trench isolation. First, a substrate is provided, a hard mask layer and a patterned photoresist layer are sequentially formed on the substrate, at least one trench is then formed in the substrate through an etching process, the hard mask layer is removed. Afterwards, a filler is formed at least in the trench and a planarization process is then performed on the filler. Since the planarization process is performed only on the filler, so the dishing phenomenon can effectively be avoided.

Abstract translation: 浅沟槽隔离的制造方法。 首先，提供基板，在基板上顺序地形成硬掩模层和图案化的光致抗蚀剂层，然后通过蚀刻工艺在基板中形成至少一个沟槽，去除硬掩模层。 然后，至少在沟槽中形成填料，然后对填料进行平面化处理。 由于仅在填料上进行平坦化处理，所以可以有效地避免凹陷现象。