公开(公告)号：US08828779B2

公开(公告)日：2014-09-09

申请号：US13665937

申请日：2012-11-01

Applicant: United Microelectronics Corp.

Inventor： Xin Zhao

IPC: H01L21/00 ,  H01L27/146 ,  H01L31/0232

CPC classification number: H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0232 ,  H01L31/02327

Abstract: A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A reflective layer is formed on the active side, so that at least a curved mirror is formed on the active side.

Abstract translation: 背景照明（BSI）CMOS图像感测处理包括以下步骤。 提供具有活性侧的基板。 执行弯曲过程以弯曲活动侧。 在活性侧形成反射层，使得至少一个弯曲镜形成在活动侧上。

公开(公告)号：US20140120653A1

公开(公告)日：2014-05-01

申请号：US13665937

申请日：2012-11-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Xin Zhao

IPC: H01L31/0232

CPC classification number: H01L27/1464 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0232 ,  H01L31/02327

Abstract: A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A reflective layer is formed on the active side, so that at least a curved mirror is formed on the active side.

Abstract translation: 背景照明（BSI）CMOS图像感测处理包括以下步骤。 提供具有活性侧的基板。 执行弯曲过程以弯曲活动侧。 在活性侧形成反射层，使得至少一个曲面镜形成在活动侧上。

公开(公告)号：US12266578B2

公开(公告)日：2025-04-01

申请号：US17892326

申请日：2022-08-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sheng Zhang ,  Chien-Kee Pang ,  Xin Zhao

IPC: H01L21/66

Abstract: A chips bonding auxiliary structure includes a first chip, an auxiliary pattern and a second chip. The first chip has a first surface. The auxiliary pattern is form on the first surface. The second chip has a second surface bonding to the first surface to form at least one gap space surrounding the auxiliary pattern.

公开(公告)号：US11456221B2

公开(公告)日：2022-09-27

申请号：US16906330

申请日：2020-06-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Sheng Zhang ,  Chien-Kee Pang ,  Xin Zhao

IPC: H01L21/66

Abstract: A method for measuring chips bonding strength includes steps as follows: An auxiliary pattern is formed on a first surface of a first chip. A second surface of a second chip is bonded to the first surface to form at least one gap space surrounding the auxiliary pattern. Next, dimensions of the at least one gap space and the auxiliary pattern are measure respectively; and the bonding strength between the first chip and the second chip is estimated according to the dimensions.