公开(公告)号：US09668064B2

公开(公告)日：2017-05-30

申请号：US14630620

申请日：2015-02-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Sheng Hsu ,  Yuan-Sheng Lin ,  Wei-Hua Fang ,  Kuan-Yu Wang ,  Yan-Da Chen

IPC: B81C1/00 ,  H04R23/00

CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00182 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A microelectromechanical system microphone includes a semiconductor-on-insulator structure, a plurality of resistors, a plurality of first openings, and a vent hole. The semiconductor-on-insulator structure includes a substrate, an insulating layer and a semiconductor layer. The resistors are formed in the semiconductor layer, the first openings are formed in the semiconductor layer, and the vent hole is formed in the insulating layer and the substrate. The resistors are connected to each other to form a resistor pattern, and the first openings are all formed within the resistor pattern.

公开(公告)号：US20160229692A1

公开(公告)日：2016-08-11

申请号：US14643183

申请日：2015-03-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yuan-Sheng Lin ,  Chang-Sheng Hsu ,  Meng-Jia Lin ,  Shih-Wei Li ,  Yan-Da Chen

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00238 ,  B81B2203/0127 ,  B81C2203/0792

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a base substrate and a MEMS structure. The base substrate comprises a CMOS structure. The MEMS structure is formed on the base substrate adjacent to the CMOS structure. The MEMS structure is connected to the CMOS structure. The MEMS structure comprises a membrane and a backplate. The base substrate has a cavity corresponding to the MEMS structure.

Abstract translation: 提供半导体结构及其制造方法。 半导体结构包括基底和MEMS结构。 基底包括CMOS结构。 MEMS结构形成在与CMOS结构相邻的基底基板上。 MEMS结构连接到CMOS结构。 MEMS结构包括膜和背板。 基底衬底具有对应于MEMS结构的空腔。

公开(公告)号：US20160212551A1

公开(公告)日：2016-07-21

申请号：US14630620

申请日：2015-02-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Sheng Hsu ,  Yuan-Sheng Lin ,  Wei-Hua Fang ,  Kuan-Yu Wang ,  Yan-Da Chen

IPC: H04R23/00 ,  B81B3/00

CPC classification number: H04R23/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00182 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A microelectromechanical system microphone includes a semiconductor-on-insulator structure, a plurality of resistors, a plurality of first openings, and a vent hole. The semiconductor-on-insulator structure includes a substrate, an insulating layer and a semiconductor layer. The resistors are formed in the semiconductor layer, the first openings are formed in the semiconductor layer, and the vent hole is formed in the insulating layer and the substrate. The resistors are connected to each other to form a resistor pattern, and the first openings are all formed within the resistor pattern.

Abstract translation: 微机电系统麦克风包括绝缘体上半导体结构，多个电阻器，多个第一开口和通气孔。 绝缘体上半导体结构包括衬底，绝缘层和半导体层。 电阻器形成在半导体层中，第一开口形成在半导体层中，并且通气孔形成在绝缘层和基板中。 电阻器彼此连接以形成电阻器图案，并且第一开口都形成在电阻器图案内。