公开(公告)号：US10332978B2

公开(公告)日：2019-06-25

申请号：US15689780

申请日：2017-08-29

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chia-Lin Lu ,  Yu-Cheng Tung ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/485 ,  H01L21/768

Abstract: A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.

公开(公告)号：US20170117380A1

公开(公告)日：2017-04-27

申请号：US14924479

申请日：2015-10-27

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chia-Lin Lu ,  Yu-Cheng Tung ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L23/485 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.

公开(公告)号：US20180006133A1

公开(公告)日：2018-01-04

申请号：US15689780

申请日：2017-08-29

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chia-Lin Liu ,  Yu-Cheng Tung ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L21/76834 ,  H01L21/76897 ,  H01L23/485 ,  H01L29/41791 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.

公开(公告)号：US09780193B2

公开(公告)日：2017-10-03

申请号：US14924479

申请日：2015-10-27

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chia-Lin Lu ,  Yu-Cheng Tung ,  Chun-Lung Chen ,  Kun-Yuan Liao ,  Feng-Yi Chang

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/6656 ,  H01L23/485 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.