公开(公告)号：US20170352541A1

公开(公告)日：2017-12-07

申请号：US15170958

申请日：2016-06-02

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： CHIH-KAI HSU ,  YU-HSIANG HUNG ,  WEI-CHI CHENG ,  SSU-I FU ,  JYH-SHYANG JENQ ,  CHAO-HUNG LIN

IPC: H01L21/02 ,  H01L21/308 ,  H01L21/306 ,  H01L29/66 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  H01L21/02532 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/6656 ,  H01L29/66818

Abstract: The invention provides a method for fabricating a fin field effect transistor (FinFET), comprising: providing a substrate having a logic region and a large region; forming a plurality of fin structures in the logic region by removing a portion of the substrate in the logic region; forming an oxide layer on the substrate filling in-between the fin structures in the logic region; forming an first epitaxial structure in the large region by removing a portion of the substrate in the large region; exposing a portion of the fin structures and a portion of the epitaxial structure by removing a portion of the oxide layer; and forming a gate electrode on portions of the fin structures.