公开(公告)号：US20250011920A1

公开(公告)日：2025-01-09

申请号：US18346402

申请日：2023-07-03

Applicant: United States of America as represented by the Administrator of NASA

Inventor： Hyun Jung Kim ,  Sang H. Choi ,  Yeonjoon Park

IPC: C23C14/58 ,  C23C14/14 ,  C23C14/34

Abstract: Methods and systems that enable growing a SiGe film at relative high temperature resulting in single crystalline properties and imparting twin crystal structures and/or dislocation to the SiGe film through either in-situ or ex-situ electron-beam irradiation. The various embodiments may maintain (or increase) the Seeback coefficient and electrical conductivity of thermoelectric materials and simultaneously decrease the thermal conductivity of the thermoelectric materials.

公开(公告)号：US11980100B2

公开(公告)日：2024-05-07

申请号：US17374091

申请日：2021-07-13

Applicant: UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA

Inventor： Sang H. Choi ,  Hyun Jung Kim ,  Adam J. Duzik ,  Cheol Park

IPC: H10N10/854 ,  H10N10/01 ,  H10N10/17

CPC classification number: H10N10/854 ,  H10N10/01 ,  H10N10/17

Abstract: A metal junction thermoelectric device includes at least one thermoelectric element. The thermoelectric element has first and second opposite sides, and a first conductor made from a first metal, and a second conductor made from a second metal. The first and second conductors are electrically interconnected in series, and the first and second conductors are arranged to conduct heat in parallel between the first and second sides. The first metal has a first occupancy state, and the second metal has a second occupancy state that is lower than the first occupancy state. A temperature difference between the first and second sides of the thermoelectric element causes a charge potential due to the difference in occupancy states of the first and second metals. The charge potential generates electrical power.

公开(公告)号：US12022172B2

公开(公告)日：2024-06-25

申请号：US17723675

申请日：2022-04-19

Applicant: UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA

Inventor： Stephen E. Borg ,  Hyun Jung Kim

IPC: H04N23/11 ,  G01J5/08 ,  G02F1/21 ,  G06T5/50 ,  G06T5/92 ,  G01J5/00

CPC classification number: H04N23/11 ,  G01J5/0859 ,  G02F1/213 ,  G06T5/50 ,  G06T5/92 ,  G01J2005/0077 ,  G06T2207/10048 ,  G06T2207/20208 ,  G06T2207/20221

Abstract: A multi-spectral imaging system utilizing tunable optics is disclosed. Various disclosed systems include a tunable optical filter coupled to a broadband imaging system. The tunable optical filter allows discrete infrared wavelengths to pass to the broadband imaging system so that monochromatic infrared images of a scene may be captured. An image processing system may process selected monochromatic infrared images by using a ratio technique to generate an emissivity-independent thermal image of the scene. The tunable optical filter may also be used to adjust a quality factor and control an amount of radiated energy that is passed to an image sensor of the broadband imaging system thereby acting as an aperture to account for both low and high radiance portions of the scene.

公开(公告)号：US11885040B2

公开(公告)日：2024-01-30

申请号：US17115101

申请日：2020-12-08

Applicant: UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA

Inventor： Hyun Jung Kim ,  Sang Hyouk Choi

IPC: C30B29/52 ,  C30B23/08 ,  C30B23/06 ,  H01L21/02

CPC classification number: C30B23/08 ,  C30B23/066 ,  C30B29/52 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/02658

Abstract: Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice.

公开(公告)号：US20230336846A1

公开(公告)日：2023-10-19

申请号：US17723675

申请日：2022-04-19

Applicant: United States of America as Represented by the administrator of NASA

Inventor： Stephen E. Borg ,  Hyun Jung Kim

IPC: H04N5/33 ,  G06T5/00 ,  G06T5/50 ,  G01J5/08 ,  G02F1/21

CPC classification number: H04N5/332 ,  G06T5/009 ,  G06T5/50 ,  G01J5/0859 ,  G02F1/213 ,  G06T2207/10048 ,  G06T2207/20208 ,  G06T2207/20221 ,  G01J2005/0077

Abstract: A multi-spectral imaging system utilizing tunable optics is disclosed. Various disclosed systems include a tunable optical filter coupled to a broadband imaging system. The tunable optical filter allows discrete infrared wavelengths to pass to the broadband imaging system so that monochromatic infrared images of a scene may be captured. An image processing system may process selected monochromatic infrared images by using a ratio technique to generate an emissivity-independent thermal image of the scene. The tunable optical filter may also be used to adjust a quality factor and control an amount of radiated energy that is passed to an image sensor of the broadband imaging system thereby acting as an aperture to account for both low and high radiance portions of the scene.

公开(公告)号：US20210123158A1

公开(公告)日：2021-04-29

申请号：US17115101

申请日：2020-12-08

Applicant: UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA

Inventor： Hyun Jung Kim ,  Sang Hyouk Choi

IPC: C30B23/08 ,  C30B23/06 ,  C30B29/52 ,  H01L21/02

Abstract: Some aspects relate to methods of forming an epitaxial layer. In some examples, the methods include ejecting atoms from a molten metal sputtering material onto a heated crystalline substrate and growing a single epitaxial layer on the substrate from the ejected atoms, where the atoms are ejected with sufficient energy that the grown epitaxial layer has at least a partial rhombohedral lattice, and wherein the crystalline substrate is heated to a temperature of about 600 degrees Celsius or less, or about 500 degrees or less. Other aspects relate to materials, such as a material including a single epitaxial layer on top of a crystalline substrate, the layer including one or more semiconductor materials and having at least a partial rhombohedral lattice, or a substantially rhombohedral lattice.