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    CONTINUOUS CHEMICAL VAPOR DEPOSITION/INFILTRATION COATER
    2.
    发明申请
    CONTINUOUS CHEMICAL VAPOR DEPOSITION/INFILTRATION COATER 审中-公开
    连续化学蒸气沉积/渗透涂料

    公开(公告)号：US20160229758A1

    公开(公告)日：2016-08-11

    申请号：US14619320

    申请日：2015-02-11

    Applicant: United Technologies Corporation

    Inventor： Michael A. Kmetz ,  Kirk C. Newton

    IPC: C04B41/00

    CPC classification number: C04B41/0018 ,  C04B35/62844 ,  C04B35/62863 ,  C04B35/62868 ,  C04B35/62871 ,  C04B35/62873 ,  C04B35/62884 ,  C04B35/62886 ,  C23C16/045 ,  C23C16/545

    Abstract: A method to form a ceramic interface coating on ceramic matrix composite (CMC) precursor tape by a continuous process includes passing a ceramic fiber woven cloth tape or unidirectional tape of a first ceramic with a first and second surface through at least one reaction zone of a continuous vacuum chemical vapor deposition (CVD) or chemical vapor infiltration (CVI) reactor heated to a reaction temperature. The method further includes directing a flow of CVD or CVI reactant gas of a second ceramic at the first surface of the tape in a direction perpendicular to the tape such that the reactant gas passes through the tape in a forced flow process depositing the second ceramic on the fibers of the first ceramic thereby coating the fibers of the first ceramic tape with the second ceramic to interface coating form a coated fiber CMC precursor tape product.

    Abstract translation: 通过连续方法在陶瓷基复合材料（CMC）前体胶带上形成陶瓷界面涂层的方法包括使第一和第二表面的陶瓷纤维编织布带或第一陶瓷的单向带通过至少一个反应区 连续真空化学气相沉积（CVD）或化学气相渗透（CVI）反应器加热至反应温度。 该方法还包括在垂直于带的方向上引导第二陶瓷的CVD或CVI反应气流在带的第一表面，使得反应气体以强制流动过程的方式穿过带，将第二陶瓷沉积在 因此第一陶瓷的纤维从而用第二陶瓷涂覆第一陶瓷带的纤维以形成涂覆的纤维CMC前体胶带产品。

    GASEOUS BASED DESULFURIZATION OF ALLOYS
    3.
    发明申请
    GASEOUS BASED DESULFURIZATION OF ALLOYS 有权
    基于气体的合金脱硫

    公开(公告)号：US20140178244A1

    公开(公告)日：2014-06-26

    申请号：US13723081

    申请日：2012-12-20

    Applicant: UNITED TECHNOLOGIES CORPORATION

    Inventor： Mario P. Bochiechio ,  John Joseph Marcin ,  Kirk C. Newton ,  Michael A. Kmetz

    IPC: C22B9/05

    CPC classification number: C22B9/05 ,  B22D1/002

    Abstract: A method for desulfurizing a metal alloy comprises heating the metal alloy to a molten state. A gaseous desulfurizing compound is bubbled through the molten alloy to form a solid sulfur-containing waste phase and a molten reduced-sulfur alloy phase. The solid waste phase and the molten reduced-sulfur alloy phase are separated. The gaseous desulfurizing compound includes a constituent element selected from the group: alkali metals, alkaline earth metals, and rare earth metals.

    Abstract translation: 金属合金的脱硫方法包括将金属合金加热至熔融状态。 气态脱硫化合物通过熔融合金鼓泡形成固体含硫废物相和熔融还原硫合金相。 固相废物相和熔融的还原硫合金相分离。 气态脱硫化合物包括选自碱金属，碱土金属和稀土金属的组成元素。

    Isothermal warm wall CVD reactor
    4.
    发明授权
    Isothermal warm wall CVD reactor 有权

    公开(公告)号：US10100409B2

    公开(公告)日：2018-10-16

    申请号：US14619338

    申请日：2015-02-11

    Applicant: United Technologies Corporation

    Inventor： Kirk C. Newton

    IPC: C23C16/44 ,  C23C16/46 ,  C23C16/04 ,  C23C16/34 ,  C23C16/26 ,  C23C16/32 ,  C23C16/40 ,  C23C16/06

    Abstract: A chemical vapor deposition (CVD) reactor includes a double wall vacuum processing chamber with an inner wall and an outer wall and fluid passages between the walls. A layer of thermal insulation covers the outer wall. A layer of high temperature thermal insulation covers the inner wall. Heating elements are positioned in the interior of the processing chamber to heat a substrate mounted in the chamber. A gas inlet structure is positioned through the inner and outer walls of the chamber and oriented to direct a flow of reactant gas against the substrate to form a CVD coating on the substrate. A gas outlet structure connected to a vacuum and effluent management system is positioned through the inner and outer walls of the chamber. Fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through the passages between the inner and outer walls maintain a controlled isothermal inner wall temperature above a condensation temperature of reactant gas and effluent reacted gas byproducts from condensing on the inner walls and insulation in the chamber.

    Gaseous based desulfurization of alloys
    5.
    发明授权
    Gaseous based desulfurization of alloys 有权
    合金的气态脱硫

    公开(公告)号：US09481917B2

    公开(公告)日：2016-11-01

    申请号：US13723081

    申请日：2012-12-20

    Applicant: United Technologies Corporation

    Inventor： Mario P. Bochiechio ,  John Joseph Marcin ,  Kirk C. Newton ,  Michael A. Kmetz

    IPC: C22B9/05 ,  B22D1/00

    CPC classification number: C22B9/05 ,  B22D1/002

    Abstract: A method for desulfurizing a metal alloy comprises heating the metal alloy to a molten state. A gaseous desulfurizing compound is bubbled through the molten alloy to form a solid sulfur-containing waste phase and a molten reduced-sulfur alloy phase. The solid waste phase and the molten reduced-sulfur alloy phase are separated. The gaseous desulfurizing compound includes a constituent element selected from the group: alkali metals, alkaline earth metals, and rare earth metals.

    Abstract translation: 金属合金的脱硫方法包括将金属合金加热至熔融状态。 气态脱硫化合物通过熔融合金鼓泡形成固体含硫废物相和熔融还原硫合金相。 固相废物相和熔融的还原硫合金相分离。 气态脱硫化合物包括选自碱金属，碱土金属和稀土金属的组成元素。

    ISOTHERMAL WARM WALL CVD REACTOR
    6.
    发明申请
    ISOTHERMAL WARM WALL CVD REACTOR 审中-公开
    同温度瓦斯CVD反应堆

    公开(公告)号：US20160230279A1

    公开(公告)日：2016-08-11

    申请号：US14619338

    申请日：2015-02-11

    Applicant: United Technologies Corporation

    Inventor： Kirk C. Newton

    IPC: C23C16/46 ,  C23C16/32 ,  C23C16/44 ,  C23C16/40 ,  C23C16/06 ,  C23C16/26 ,  C23C16/34

    CPC classification number: C23C16/46 ,  C23C16/045 ,  C23C16/06 ,  C23C16/26 ,  C23C16/32 ,  C23C16/325 ,  C23C16/342 ,  C23C16/345 ,  C23C16/403 ,  C23C16/4401 ,  C23C16/4412

    Abstract: A chemical vapor deposition (CVD) reactor includes a double wall vacuum processing chamber with an inner wall and an outer wall and fluid passages between the walls. A layer of thermal insulation covers the outer wall. A layer of high temperature thermal insulation covers the inner wall. Heating elements are positioned in the interior of the processing chamber to heat a substrate mounted in the chamber. A gas inlet structure is positioned through the inner and outer walls of the chamber and oriented to direct a flow of reactant gas against the substrate to form a CVD coating on the substrate. A gas outlet structure connected to a vacuum and effluent management system is positioned through the inner and outer walls of the chamber. Fluid inlet and outlet structures positioned to circulate heated thermal transfer fluid through the passages between the inner and outer walls maintain a controlled isothermal inner wall temperature above a condensation temperature of reactant gas and effluent reacted gas byproducts from condensing on the inner walls and insulation in the chamber.

    Abstract translation: 化学气相沉积（CVD）反应器包括双壁真空处理室，其具有内壁和外壁以及壁之间的流体通道。 一层隔热层覆盖外墙。 一层高温绝热覆盖内壁。 加热元件位于处理室的内部以加热安装在腔室中的基底。 气体入口结构通过室的内壁和外壁定位，并被定向成将反应气体流引向衬底以在衬底上形成CVD涂层。 连接到真空和流出物管理系统的气体出口结构通过腔室的内壁和外壁定位。 定位成使加热的热传递流体通过内壁和外壁之间的通道循环的流体入口和出口结构保持高于反应物气体的冷凝温度和流出物反应的气体副产物在内壁上凝结的受控等温内壁温度，并且在 房间。

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