公开(公告)号：US20210021103A1

公开(公告)日：2021-01-21

申请号：US17002129

申请日：2020-08-25

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy LYAKH ,  Matthew Suttinger

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/20

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

公开(公告)号：US11502482B2

公开(公告)日：2022-11-15

申请号：US17002129

申请日：2020-08-25

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy Lyakh ,  Matthew Suttinger

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

公开(公告)号：US11515686B1

公开(公告)日：2022-11-29

申请号：US16871270

申请日：2020-05-11

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy Lyakh ,  Matthew Suttinger

IPC: H01S5/34 ,  H01S5/06 ,  B82Y20/00

Abstract: A method is for making a QCL having an InP spacer within a laser core, the QCL to provide a CW output in a high quality beam. The method may include selectively setting parameters for the QCL. The parameters may include a number of the InP spacer, a thickness for each InP spacer, a number of stages in the laser core, and a dopant concentration value in the laser core. The method may include forming the QCL based upon the parameters so that a figure of merit comprises a greatest value for a fundamental mode of operation for the QCL.

公开(公告)号：US12034276B2

公开(公告)日：2024-07-09

申请号：US17938817

申请日：2022-10-07

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy Lyakh ,  Matthew Suttinger

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

CPC classification number: H01S5/3402 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wave functions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

公开(公告)号：US10811847B2

公开(公告)日：2020-10-20

申请号：US16136713

申请日：2018-09-20

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy Lyakh ,  Matthew Suttinger

IPC: H01S5/34 ,  H01S5/026 ,  H01S5/20 ,  H01S5/22

Abstract: A QCL may include a substrate, and a sequence of semiconductor epitaxial layers adjacent the substrate and defining an active region, an injector region adjacent the active region, and a waveguide optically coupled to the active region. The active region may include stages, each stage having an upper laser level and a lower laser level defining respective first and second wavefunctions. The upper laser level may have an upper laser level average coordinate, and the lower laser level may have a lower laser level average coordinate. The upper laser level average coordinate and the lower laser level average coordinate may have spacing of less than 10 nm. Wave functions for all active region energy levels located below the lower laser level may have greater than 10% overlap with the injector region.

公开(公告)号：US10673209B2

公开(公告)日：2020-06-02

申请号：US16029947

申请日：2018-07-09

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy Lyakh ,  Matthew Suttinger

IPC: H01S5/34 ,  H01S5/22 ,  H01S5/343 ,  H01S5/022 ,  H01S5/062 ,  H01S5/227 ,  H01S5/024 ,  H01S5/10

Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate and defining an active region. The active region may have an elongate shape extending laterally across the substrate and having a number of stages greater than 25, each stage having a thickness less than 40 nanometers. The active region may have a ridge width greater than 15 μm.