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    Whole virus quantum mechanical tunneling current and electronic sensors
    1.
    发明授权
    Whole virus quantum mechanical tunneling current and electronic sensors 有权

    公开(公告)号：US11009482B1

    公开(公告)日：2021-05-18

    申请号：US17080517

    申请日：2020-10-26

    Applicant: University of Utah Research Foundation

    Inventor： Massood Tabib-Azar

    IPC: G01N27/414 ,  G01N33/543 ,  G01N33/569

    Abstract: A field effect transistor (FET) biosensor for virus detection of a selected virus within a sample volume is disclosed. The FET comprises a semiconductor substrate, a source and drain electrode on the substrate, the electrodes spaced to form a channel. A gate electrode carried on the substrate and located in the channel between the source and drain electrodes. An insulating layer is coupled to a top surface of the gate electrode and a bottom surface of the source and drain electrodes, with an open channel above the insulating layer. A channel material is coupled to the insulating layer. Aptamers are oriented within the open channel to bind to the channel material and with the selected virus to enable a detection of the selected virus by the FET biosensor based on a change in drain-source current at a selected gate voltage.

    Micro-plasma field effect transistors
    3.
    发明授权
    Micro-plasma field effect transistors 有权
    微等离子体场效应晶体管

    公开(公告)号：US09269521B2

    公开(公告)日：2016-02-23

    申请号：US14608298

    申请日：2015-01-29

    Applicant: UNIVERSITY OF UTAH RESEARCH FOUNDATION

    Inventor： Massood Tabib-Azar

    IPC: H01J17/46 ,  H01J17/06 ,  H01J17/49 ,  H01J17/04 ,  H01J17/16

    CPC classification number: H01J17/066 ,  H01J17/04 ,  H01J17/16 ,  H01J17/49

    Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having a cavity formed therein and a second layer having a circuit formed therein. The circuit includes a micro-plasma circuit (“MPC”) that includes one or more micro-plasma devices (“MPDs”). The first layer of the circuit is bonded to the second layer of the circuit thereby forming an enclosure that contains at least one plasma gas. An excitation voltage is applied to a drain electrode of the MPDs to generate a conductive plasma path between the drain electrode and a source electrode.

    Abstract translation: 在一些方面，微等离子体装置包括含有至少一种等离子体气体的等离子体气体外壳和与等离子体气体外壳相接合的多个电极。 在其他方面，微等离子体电路装置包括其中形成有空腔的第一层和形成有电路的第二层。 该电路包括包括一个或多个微等离子体装置（“MPD”）的微等离子体电路（“MPC”）。 电路的第一层被结合到电路的第二层，由此形成包含至少一个等离子体气体的外壳。 激励电压施加到MPD的漏电极，以在漏电极和源电极之间产生导电等离子体路径。

    Whole Virus Quantum Mechanical Tunneling Current and Electronic Sensors
    5.
    发明申请
    Whole Virus Quantum Mechanical Tunneling Current and Electronic Sensors 有权

    公开(公告)号：US20210270771A1

    公开(公告)日：2021-09-02

    申请号：US17320014

    申请日：2021-05-13

    Applicant: University of Utah Research Foundation

    Inventor： Massood Tabib-Azar

    IPC: G01N27/414 ,  G01N33/543 ,  G01N33/569

    Abstract: A field effect transistor (FET) biosensor for virus detection of a selected virus within a sample volume is disclosed. The FET comprises a semiconductor substrate, a source and drain electrode on the substrate, the electrodes spaced to form a channel. A gate electrode carried on the substrate and located in the channel between the source and drain electrodes. An insulating layer is coupled to a top surface of the gate electrode and a bottom surface of the source and drain electrodes, with an open channel above the insulating layer. A channel material is coupled to the insulating layer. Aptamers are oriented within the open channel to bind to the channel material and with the selected virus to enable a detection of the selected virus by the FET biosensor based on a change in drain-source current at a selected gate voltage.

    MICRO-PLASMA FIELD EFFECT TRANSISTORS
    6.
    发明申请
    MICRO-PLASMA FIELD EFFECT TRANSISTORS 有权
    微等离子体场效应晶体管

    公开(公告)号：US20150162158A1

    公开(公告)日：2015-06-11

    申请号：US14608298

    申请日：2015-01-29

    Applicant: UNIVERSITY OF UTAH RESEARCH FOUNDATION

    Inventor： Massood Tabib-Azar

    IPC: H01J17/06 ,  H01J17/49

    CPC classification number: H01J17/066 ,  H01J17/04 ,  H01J17/16 ,  H01J17/49

    Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having a cavity formed therein and a second layer having a circuit formed therein. The circuit includes a micro-plasma circuit (“MPC”) that includes one or more micro-plasma devices (“MPDs”). The first layer of the circuit is bonded to the second layer of the circuit thereby forming an enclosure that contains at least one plasma gas. An excitation voltage is applied to a drain electrode of the MPDs to generate a conductive plasma path between the drain electrode and a source electrode.

    Abstract translation: 在一些方面，微等离子体装置包括含有至少一种等离子体气体的等离子体气体外壳和与等离子体气体外壳相接合的多个电极。 在其他方面，微等离子体电路装置包括其中形成有空腔的第一层和形成有电路的第二层。 该电路包括包括一个或多个微等离子体装置（“MPD”）的微等离子体电路（“MPC”）。 电路的第一层被结合到电路的第二层，由此形成包含至少一个等离子体气体的外壳。 激励电压施加到MPD的漏电极，以在漏电极和源电极之间产生导电等离子体路径。

    WHOLE VIRUS QUANTUM MECHANICAL TUNNELING CURRENT AND ELECTRONIC SENSORS
    7.
    发明申请
    WHOLE VIRUS QUANTUM MECHANICAL TUNNELING CURRENT AND ELECTRONIC SENSORS 有权

    公开(公告)号：US20210123883A1

    公开(公告)日：2021-04-29

    申请号：US17080517

    申请日：2020-10-26

    Applicant: University of Utah Research Foundation

    Inventor： Massood Tabib-Azar

    IPC: G01N27/414 ,  G01N33/543 ,  G01N33/569

    Abstract: A field effect transistor (FET) biosensor for virus detection of a selected virus within a sample volume is disclosed. The FET comprises a semiconductor substrate, a source and drain electrode on the substrate, the electrodes spaced to form a channel. A gate electrode carried on the substrate and located in the channel between the source and drain electrodes. An insulating layer is coupled to a top surface of the gate electrode and a bottom surface of the source and drain electrodes, with an open channel above the insulating layer. A channel material is coupled to the insulating layer. Aptamers are oriented within the open channel to bind to the channel material and with the selected virus to enable a detection of the selected virus by the FET biosensor based on a change in drain-source current at a selected gate voltage.

    NERVOUS SYSTEM INTERFACE DEVICE
    8.
    发明申请
    NERVOUS SYSTEM INTERFACE DEVICE 审中-公开
    神经系统界面装置

    公开(公告)号：US20160128589A1

    公开(公告)日：2016-05-12

    申请号：US14938634

    申请日：2015-11-11

    Applicant: University of Utah Research Foundation

    Inventor： Massood Tabib-Azar

    IPC: A61B5/04 ,  A61B5/0478 ,  A61B5/00

    CPC classification number: A61B5/04001 ,  A61B5/0004 ,  A61B5/0478 ,  A61B5/6868 ,  A61B2560/0204

    Abstract: A nervous system interface device can include a flexible active layer, a power coil, a communication module, and an antenna. More specifically, the flexible active layer can included a plurality of electrodes that are positioned to take neural measurements of the nervous system. The power coil can be electrically coupled to the flexible active layer and can be configured to receive wireless power from a power transfer device. The communication module can be electrically coupled to the flexible active layer and can be configured to receive power from the power coil. The antenna can also be adapted to wirelessly communicate neural measurement information to another device (e.g. an external computing device, receiver or the like). The nervous system interface device has two functional configurations which include a rolled and an unrolled configuration. In the rolled configuration the nervous system electrode device is rolled along a longitudinal axis for insertion into a hypodermic needle. In the unrolled configuration the nervous system electrode device is substantially flat. These nervous system electrode devices can dramatically improve access to brain function information, increase brain-machine interface functionality, and decrease foreign body response.

    Abstract translation: 神经系统接口装置可以包括柔性有源层，功率线圈，通信模块和天线。 更具体地，柔性活性层可以包括定位成进行神经系统的神经测量的多个电极。 功率线圈可以电耦合到柔性有源层，并且可以被配置为从电力传输装置接收无线电力。 通信模块可以电耦合到柔性有源层，并且可以被配置为从电力线圈接收电力。 天线还可以适于将神经测量信息无线地传送到另一设备（例如，外部计算设备，接收机等）。 神经系统接口设备具有两个功能配置，包括滚动和展开配置。 在卷绕结构中，神经系统电极装置沿着纵轴滚动以插入皮下注射针。 在展开的构型中，神经系统电极装置基本平坦。 这些神经系统电极装置可以显着改善大脑功能信息的访问，增加脑机接口功能，并减少异物反应。

    MICRO-PLASMA FIELD EFFECT TRANSISTORS
    9.
    发明申请
    MICRO-PLASMA FIELD EFFECT TRANSISTORS 审中-公开
    微等离子体场效应晶体管

    公开(公告)号：US20140346948A1

    公开(公告)日：2014-11-27

    申请号：US14167458

    申请日：2014-01-29

    Applicant: UNIVERSITY OF UTAH RESEARCH FOUNDATION

    Inventor： Massood Tabib-Azar

    IPC: H01J17/04 ,  H01J17/16

    CPC classification number: H01J17/04 ,  H01J17/066 ,  H01J17/16

    Abstract: In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, a plasma generation circuit interfaced with the plasma gas enclosure, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having plasma generating electrodes, a second layer having a cavity formed therein, and a third layer having a circuit formed therein. The circuit includes a micro-plasma circuit (MPC) that includes one or more micro-plasma devices (MPDs). A metallic layer covers the MPC except at locations of the MPDs. The first layer is bonded to the second layer and the second layer is bonded to the third layer, thereby forming an enclosure that contains at least one plasma gas.

    Abstract translation: 在一些方面，微等离子体装置包括含有至少一种等离子体气体的等离子体气体外壳，与等离子体气体外壳接口的等离子体产生电路以及与等离子体气体外壳相接合的多个电极。 在其他方面，微等离子体电路装置包括具有等离子体产生电极的第一层，其中形成有空腔的第二层和在其中形成电路的第三层。 该电路包括包含一个或多个微等离子体器件（MPD）的微等离子体电路（MPC）。 金属层覆盖MPC，除了MPD的位置。 第一层结合到第二层，第二层结合到第三层，从而形成包含至少一种等离子体气体的外壳。

    Methods for Reducing Electrode Gap Distances in Electronic Devices and Resulting Devices Having Nanometer Electrode Gaps Via Liquid Phase Molecular Layer Deposition Technique
    10.
    发明申请
    Methods for Reducing Electrode Gap Distances in Electronic Devices and Resulting Devices Having Nanometer Electrode Gaps Via Liquid Phase Molecular Layer Deposition Technique 有权

    公开(公告)号：US20220397546A1

    公开(公告)日：2022-12-15

    申请号：US17770969

    申请日：2020-10-26

    Applicant: University of Utah Research Foundation

    Inventor： Massood Tabib-Azar

    IPC: G01N27/414 ,  G01N33/543 ,  G01N33/569

    Abstract: A method for reducing electrode gap distances in an electronic device having a first electrode spatially separated from a second electrode by an electrode gap can comprise selecting (810) a milometer gap size to bind a biological material based on a size of the biological material and binding effects with the biological material. The method can further comprise coating (820) at least one surface of an electrode gap region with a first layer including molecular recognition groups, and coating (830) the at least one surface with a second layer including electrically-conductive solids that are configured to bond with the molecular recognition groups. The electronic device can be further coated (840) with additional alternating layers of the molecular recognition groups and the electrically-conductive solids to reach the nanometer gap size between a first electrode and a second electrode of the electronic device.

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