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公开(公告)号：US06545829B1
公开(公告)日：2003-04-08
申请号：US09642019
申请日：2000-08-21
IPC分类号： G02B522
CPC分类号： G03F7/70483 , G02B26/02
摘要： A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light. Alternatively, the light intensity modifying region may be formed with an ink jet printer. Instead, a clear or grey-scaled pellicle may be used, and portions of it may be ablated to alter light transmission in certain areas.
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公开(公告)号：US06538830B2
公开(公告)日：2003-03-25
申请号：US09998166
申请日：2001-12-03
IPC分类号： G02B522
CPC分类号： G03F7/70483 , G02B26/02
摘要： A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light. Alternatively, the light intensity modifying region may be formed with an ink jet printer. Instead, a clear or grey-scaled pellicle may be used, and portions of it may be ablated to alter light transmission in certain areas.
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公开(公告)号：US06465141B2
公开(公告)日：2002-10-15
申请号：US10000040
申请日：2001-12-04
IPC分类号： G03F900
CPC分类号： G03F7/70483 , G02B26/02
摘要： A system and method for minimizing critical dimension errors on imaged wafers is described. After imaging and processing one or more wafers, the various critical dimensions are determined across the imaged exposure field and compared with the target critical dimensions to ascertain average critical dimension errors. The critical dimension error distribution across the field is modeled and the necessary exposure dose corrections are calculated to compensate the critical dimension errors. A pellicle is formed with light intensity modifying regions corresponding to the calculated local dose corrections. These regions alter the amount of light which is transmitted from a light source through a semiconductor mask onto the exposure fields of the wafers. As a consequence, the critical dimensions of the printed features are altered as well. The light intensity modifying region may be formed by depositing, such as by sputtering, particles which reflect or absorb light. Alternatively, the light intensity modifying region may be formed with an ink jet printer. Instead, a clear or grey-scaled pellicle may be used, and portions of it may be ablated to alter light transmission in certain areas.
摘要翻译： 描述了用于最小化成像晶片上的临界尺寸误差的系统和方法。 在成像和处理一个或多个晶片之后，在成像的曝光场上确定各种关键尺寸，并与目标临界尺寸进行比较以确定平均临界尺寸误差。 对现场的关键尺寸误差分布进行建模，并计算必要的曝光剂量校正以补偿临界尺寸误差。 形成具有对应于计算的局部剂量校正的光强度修饰区域的防护薄膜组件。 这些区域将从光源通过半导体掩模传送到晶片的曝光场上的光量变化。 因此，打印功能的关键尺寸也会改变。 可以通过例如溅射沉积反射或吸收光的颗粒来形成光强度修饰区域。 或者，可以用喷墨打印机形成光强度修改区域。 相反，可以使用透明或灰度级的防护薄膜，并且其部分可能被消融以改变某些区域的光透射。
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公开(公告)号：US07038762B2
公开(公告)日：2006-05-02
申请号：US10901852
申请日：2004-07-28
CPC分类号： G03F7/70333 , G03F7/70358
摘要： A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.
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5.发明授权Method for controlling radiation beam intensity directed to microlithographic substrates 失效用于控制针对微光刻基片的辐射束强度的方法公开(公告)号：US06794100B2
公开(公告)日：2004-09-21
申请号：US09945316
申请日：2001-08-30
IPC分类号： G03F900
CPC分类号： G03F7/70083 , G03F7/70108 , G03F7/70141 , G03F7/70191 , G03F7/70558 , Y10S430/143
摘要： A method and apparatus for controlling an intensity distribution of a radiation beam directed to a microlithographic substrate. The method can include directing a radiation beam from a radiation source along the radiation path, with the radiation beam having a first distribution of intensity as the function of location in a plane generally transverse to the radiation path. The radiation beam impinges on an adaptive structure positioned in the radiation path and an intensity distribution of the radiation beam is changed from the first distribution to a second distribution by changing a state of the first portion of the adaptive structure relative to a second portion of the adaptive structure. For example, the transmissivity of the first portion, or inclination of the first portion can be changed relative to the second portion. The radiation is then directed away from the adaptive structure to impinge on the microlithographic substrate.
摘要翻译： 一种用于控制指向微光刻基片的辐射束的强度分布的方法和装置。 该方法可以包括沿着辐射路径引导来自辐射源的辐射束，其中辐射束具有作为大致横向于辐射路径的平面中的位置的函数的强度的第一分布。 辐射束照射位于辐射路径中的自适应结构，并且辐射束的强度分布从第一分布改变到第二分布，通过改变自适应结构的第一部分相对于第二部分的第二部分的状态 自适应结构。 例如，第一部分的透射率或第一部分的倾斜度可以相对于第二部分改变。 然后将辐射导向远离自适应结构以照射到微光刻基板上。
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公开(公告)号：US07298453B2
公开(公告)日：2007-11-20
申请号：US11378666
申请日：2006-03-17
CPC分类号： G03F7/70333 , G03F7/70358
摘要： A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.
摘要翻译： 一种用于将微光刻基板的辐射敏感材料暴露于所选择的辐射的方法和装置。 该方法可以包括将辐射沿第一方向沿着辐射路径引导到光罩，使辐射沿着第一方向沿着辐射路径从光罩传递到微光刻基片，并且沿着辐射路径沿着辐射路径移动标线片 标线路径通常垂直于第一方向。 微光刻基片可以沿着具有大致平行于第二方向的第一部件的基板路径相对于辐射路径移动，以及大致垂直于第二方向的第二部件。 当光栅基板沿着标线路径移动以改变辐射的焦平面的相对位置时，微平版印刷基板可以以周期性的方式大致平行于并且大致垂直于第二方向移动。
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7.发明授权Method and apparatus for controlling radiation beam intensity directed to microlithographic substrates 有权用于控制指向微光刻基片的辐射束强度的方法和装置公开(公告)号：US07230679B2
公开(公告)日：2007-06-12
申请号：US11397176
申请日：2006-04-04
CPC分类号： G03F7/70083 , G03F7/70108 , G03F7/70141 , G03F7/70191 , G03F7/70558 , Y10S430/143
摘要： A method and apparatus for controlling an intensity distribution of a radiation beam directed to a microlithographic substrate. The method can include directing a radiation beam from a radiation source along the radiation path, with the radiation beam having a first distribution of intensity as the function of location in a plane generally transverse to the radiation path. The radiation beam impinges on an adaptive structure positioned in the radiation path and an intensity distribution of the radiation beam is changed from the first distribution to a second distribution by changing a state of the first portion of the adaptive structure relative to a second portion of the adaptive structure. For example, the transmissivity of the first portion, or inclination of the first portion can be changed relative to the second portion. The radiation is then directed away from the adaptive structure to impinge on the microlithographic substrate.
摘要翻译： 一种用于控制指向微光刻基片的辐射束的强度分布的方法和装置。 该方法可以包括沿着辐射路径引导来自辐射源的辐射束，其中辐射束具有作为大致横向于辐射路径的平面中的位置的函数的强度的第一分布。 辐射束照射位于辐射路径中的自适应结构，并且辐射束的强度分布从第一分布改变到第二分布，通过改变自适应结构的第一部分相对于第二部分的第二部分的状态 自适应结构。 例如，第一部分的透射率或第一部分的倾斜度可以相对于第二部分改变。 然后将辐射导向远离自适应结构以照射到微光刻基板上。
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公开(公告)号：US06784975B2
公开(公告)日：2004-08-31
申请号：US09945167
申请日：2001-08-30
IPC分类号： G03B2742
CPC分类号： G03F7/70333 , G03F7/70358
摘要： A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.
摘要翻译： 一种用于将微光刻基板的辐射敏感材料暴露于所选择的辐射的方法和装置。 该方法可以包括将辐射沿第一方向沿着辐射路径引导至光罩，使辐射沿着第一方向沿着辐射路径从光栅传递到微光刻基板，并且沿着辐射路径沿着辐射路径移动标线片 标线路径通常垂直于第一方向。 微光刻基片可以沿着具有大致平行于第二方向的第一部件的基板路径相对于辐射路径移动，以及大致垂直于第二方向的第二部件。 当光栅基板沿着标线路径移动以改变辐射的焦平面的相对位置时，微平版印刷基板可以以周期性的方式大致平行于并且大致垂直于第二方向移动。
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公开(公告)号：US07046340B2
公开(公告)日：2006-05-16
申请号：US10870561
申请日：2004-06-16
CPC分类号： G03F7/70083 , G03F7/70108 , G03F7/70141 , G03F7/70191 , G03F7/70558 , Y10S430/143
摘要： A method and apparatus for controlling an intensity distribution of a radiation beam directed to a microlithographic substrate. The method can include directing a radiation beam from a radiation source along the radiation path, with the radiation beam having a first distribution of intensity as the function of location in a plane generally transverse to the radiation path. The radiation beam impinges on an adaptive structure positioned in the radiation path and an intensity distribution of the radiation beam is changed from the first distribution to a second distribution by changing a state of the first portion of the adaptive structure relative to a second portion of the adaptive structure. For example, the transmissivity of the first portion, or inclination of the first portion can be changed relative to the second portion. The radiation is then directed away from the adaptive structure to impinge on the microlithographic substrate.
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公开(公告)号：US06905975B2
公开(公告)日：2005-06-14
申请号：US10613193
申请日：2003-07-03
IPC分类号： C23F1/00 , G03F7/004 , G03F7/20 , G03F7/40 , H01L21/302 , H01L21/311 , H01L21/76
CPC分类号： G03F7/2024 , G03F7/0045 , G03F7/40
摘要： The invention includes methods by which the size and shape of photoresist-containing masking compositions can be selectively controlled after development of the photoresist. For instance, photoresist features can be formed over a substrate utilizing a photolithographic process. Subsequently, at least some of the photoresist features can be exposed to actinic radiation to cause release of a substance from the photoresist. A layer of material is formed over the photoresist features and over gaps between the features. The material has a solubility in a solvent which is reduced when the material interacts with the substance released from the photoresist. The solvent is utilized to remove portions of the material which are not sufficiently proximate to the photoresist to receive the substance, selectively relative to portions which are sufficiently proximate to the photoresist. The photoresist features can be exposed to the actinic radiation either before or after forming the layer of material.
摘要翻译： 本发明包括在光致抗蚀剂显影后可以选择性地控制含光致抗蚀剂的掩模组合物的尺寸和形状的方法。 例如，可以利用光刻工艺在衬底上形成光致抗蚀剂特征。 随后，光致抗蚀剂特征中的至少一些可以暴露于光化辐射以引起物质从光致抗蚀剂的释放。 在光致抗蚀剂特征和特征之间的间隙上形成一层材料。 该材料在溶剂中具有溶解性，当材料与从光致抗蚀剂释放的物质相互作用时，其溶解度降低。 使用溶剂去除材料的不足够接近光致抗蚀剂的部分，以便相对于足够靠近光致抗蚀剂的部分选择性地接收物质。 在形成材料层之前或之后，光致抗蚀剂特征可以暴露于光化辐射。
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