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公开(公告)号：US07298453B2
公开(公告)日：2007-11-20
申请号：US11378666
申请日：2006-03-17
CPC分类号： G03F7/70333 , G03F7/70358
摘要： A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.
摘要翻译： 一种用于将微光刻基板的辐射敏感材料暴露于所选择的辐射的方法和装置。 该方法可以包括将辐射沿第一方向沿着辐射路径引导到光罩，使辐射沿着第一方向沿着辐射路径从光罩传递到微光刻基片，并且沿着辐射路径沿着辐射路径移动标线片 标线路径通常垂直于第一方向。 微光刻基片可以沿着具有大致平行于第二方向的第一部件的基板路径相对于辐射路径移动，以及大致垂直于第二方向的第二部件。 当光栅基板沿着标线路径移动以改变辐射的焦平面的相对位置时，微平版印刷基板可以以周期性的方式大致平行于并且大致垂直于第二方向移动。
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公开(公告)号：US06784975B2
公开(公告)日：2004-08-31
申请号：US09945167
申请日：2001-08-30
IPC分类号： G03B2742
CPC分类号： G03F7/70333 , G03F7/70358
摘要： A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.
摘要翻译： 一种用于将微光刻基板的辐射敏感材料暴露于所选择的辐射的方法和装置。 该方法可以包括将辐射沿第一方向沿着辐射路径引导至光罩，使辐射沿着第一方向沿着辐射路径从光栅传递到微光刻基板，并且沿着辐射路径沿着辐射路径移动标线片 标线路径通常垂直于第一方向。 微光刻基片可以沿着具有大致平行于第二方向的第一部件的基板路径相对于辐射路径移动，以及大致垂直于第二方向的第二部件。 当光栅基板沿着标线路径移动以改变辐射的焦平面的相对位置时，微平版印刷基板可以以周期性的方式大致平行于并且大致垂直于第二方向移动。
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公开(公告)号：US07038762B2
公开(公告)日：2006-05-02
申请号：US10901852
申请日：2004-07-28
CPC分类号： G03F7/70333 , G03F7/70358
摘要： A method and apparatus for exposing a radiation-sensitive material of a microlithographic substrate to a selected radiation. The method can include directing the radiation along a radiation path in a first direction toward a reticle, passing the radiation from the reticle and to the microlithographic substrate along the radiation path in a second direction, and moving the reticle relative to the radiation path along a reticle path generally normal to the first direction. The microlithographic substrate can move relative to the radiation path along a substrate path having a first component generally parallel to the second direction, and a second component generally perpendicular to the second direction. The microlithographic substrate can move generally parallel to and generally perpendicular to the second direction in a periodic manner while the reticle moves along the reticle path to change a relative position of a focal plane of the radiation.
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4.发明授权Vibration-enhanced spin-on film techniques for semiconductor device processing 失效用于半导体器件加工的振动增强旋涂膜技术
公开(公告)号：US5925410A
公开(公告)日：1999-07-20
申请号：US852144
申请日：1997-05-06
CPC分类号： H01L21/6715 , B05D1/005 , B05D3/12
摘要： A method for forming a layer of material, particularly a dielectric material, on a substrate includes the steps of dispensing the material onto the substrate, spinning the substrate to produce a layer of the dispensed material, and vibrating the substrate to eliminate voids and/or gaps in the dispensed material. The dispensed material is hardened and if not sufficiently planar, may be subjected to a planarization step.
摘要翻译： 在衬底上形成材料层，特别是介电材料层的方法包括以下步骤：将材料分配到衬底上，旋转衬底以产生分配材料层，并振动衬底以消除空隙和/或 分配材料中的间隙。 分配的材料被硬化并且如果不是足够的平面，可以进行平坦化步骤。
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公开(公告)号：US08048812B2
公开(公告)日：2011-11-01
申请号：US12769071
申请日：2010-04-28
申请人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： H01L21/302
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern. Pitch multiplication is accomplished by patterning an amorphous carbon layer. Sidewall spacers are then formed on the amorphous carbon sidewalls which are then removed; the sidewall spacers defining the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is transferred to the BARC. The combined pattern is transferred to an underlying amorphous silicon layer. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, is then etched into the underlying substrate.
摘要翻译： 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一模式的较小特征。 通过图案化无定形碳层来实现间距倍增。 然后在非晶碳侧壁上形成侧壁间隔物，然后将其去除; 侧壁间隔物限定第一掩模图案。 然后沉积底部抗反射涂层（BARC）以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，其转移到BARC。 将组合图案转移到下面的非晶硅层。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 然后将组合的掩模图案蚀刻到下面的基底中。
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6.发明申请Integrated Circuit Having Pitch Reduced Patterns Relative To Photolithography Features 失效具有相对于光刻特征的节距减小的集成电路公开(公告)号：US20120256309A1
公开(公告)日：2012-10-11
申请号：US13530679
申请日：2012-06-22
申请人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi (Jenny) Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： H01L23/48
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.
摘要翻译： 具有不同尺寸特征的集成电路，其中较小特征与具有通过常规光刻形成的尺寸的较大特征具有间距倍增关系。
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公开(公告)号：US07771917B2
公开(公告)日：2010-08-10
申请号：US11155167
申请日：2005-06-17
IPC分类号： G03F7/00
CPC分类号： B29C59/16 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017
摘要： A method of forming a template for use in imprint lithography. The method comprises providing an ultraviolet (“UV”) wavelength radiation transparent layer and forming a pattern in the UV transparent layer by photolithography. The pattern may be formed by anisotropically etching the UV transparent layer and may have feature dimensions of less than approximately 100 nm, such as dimensions of less than approximately 45 nm. An additional embodiment of the method comprises providing a UV opaque layer comprising a first pattern therein, forming a first UV transparent layer in contact with the first contact-pattern of the UV opaque layer, forming a second UV transparent layer in contact with the first UV transparent layer, and removing the UV opaque layer to form the template. An intermediate template structure for use in imprint lithography is also disclosed. In other embodiments, a template that is opaque to UV wavelength radiation and a method of forming the same are disclosed.
摘要翻译： 形成用于压印光刻的模板的方法。 该方法包括提供紫外（“UV”）波长辐射透明层并通过光刻在UV透明层中形成图案。 图案可以通过各向异性蚀刻UV透明层而形成，并且可以具有小于约100nm的特征尺寸，例如小于约45nm的尺寸。 该方法的另外的实施例包括提供其中包含第一图案的UV不透明层，形成与UV不透明层的第一接触图案接触的第一UV透明层，形成与第一UV接触的第二UV透明层 透明层，并除去UV不透明层以形成模板。 还公开了用于压印光刻的中间模板结构。 在其它实施例中，公开了对UV波长辐射不透明的模板及其形成方法。
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公开(公告)号：US07687408B2
公开(公告)日：2010-03-30
申请号：US11683518
申请日：2007-03-08
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0337 , H01L21/0332 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/31144 , H01L21/32139 , Y10S438/947 , Y10S438/95
摘要： Different sized features in the array and in the periphery of an integrated circuit are patterned on a substrate in a single step. In particular, a mixed pattern, combining two separately formed patterns, is formed on a single mask layer and then transferred to the underlying substrate. The first of the separately formed patterns is formed by pitch multiplication and the second of the separately formed patterns is formed by conventional photolithography. The first of the separately formed patterns includes lines that are below the resolution of the photolithographic process used to form the second of the separately formed patterns. These lines are made by forming a pattern on photoresist and then etching that pattern into an amorphous carbon layer. Sidewall pacers having widths less than the widths of the un-etched parts of the amorphous carbon are formed on the sidewalls of the amorphous carbon. The amorphous carbon is then removed, leaving behind the sidewall spacers as a mask pattern. Thus, the spacers form a mask having feature sizes less than the resolution of the photolithography process used to form the pattern on the photoresist. A protective material is deposited around the spacers. The spacers are further protected using a hard mask and then photoresist is formed and patterned over the hard mask. The photoresist pattern is transferred through the hard mask to the protective material. The pattern made out by the spacers and the temporary material is then transferred to an underlying amorphous carbon hard mask layer. The pattern, having features of difference sizes, is then transferred to the underlying substrate.
摘要翻译： 集成电路的阵列和周边中的不同尺寸的特征在单个步骤中在衬底上图案化。 特别地，组合两个单独形成的图案的混合图案形成在单个掩模层上，然后转移到下面的基底。 单独形成的图案中的第一个通过间距倍增形成，并且通过常规光刻形成第二个单独形成的图案。 单独形成的图案中的第一个包括低于用于形成第二个单独形成的图案的光刻工艺的分辨率的线。 这些线通过在光致抗蚀剂上形成图案然后将该图案刻蚀成无定形碳层而制成。 在无定形碳的侧壁上形成宽度小于无定形碳的未蚀刻部分的宽度的侧壁盘。 然后去除无定形碳，留下侧壁间隔物作为掩模图案。 因此，间隔物形成具有小于用于在光致抗蚀剂上形成图案的光刻工艺的分辨率的特征尺寸的掩模。 保护材料沉积在间隔物周围。 使用硬掩模进一步保护间隔物，然后在硬掩模上形成并图案化光致抗蚀剂。 光致抗蚀剂图案通过硬掩模转印到保护材料上。 然后将由间隔物和临时材料制成的图案转移到下面的无定形碳硬掩模层。 具有不同尺寸特征的图案然后被转移到下面的基底。
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公开(公告)号：US07651951B2
公开(公告)日：2010-01-26
申请号：US11681027
申请日：2007-03-01
申请人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.
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10.发明授权Integrated circuit having pitch reduced patterns relative to photoithography features 失效具有相对于光刻特征的节距减小图案的集成电路公开(公告)号：US08598632B2
公开(公告)日：2013-12-03
申请号：US13530679
申请日：2012-06-22
申请人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
发明人： Luan Tran , William T. Rericha , John Lee , Ramakanth Alapati , Sheron Honarkhah , Shuang Meng , Puneet Sharma , Jingyi Bai , Zhiping Yin , Paul Morgan , Mirzafer K. Abatchev , Gurtej S. Sandhu , D. Mark Durcan
IPC分类号： H01L27/118
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/3086 , H01L21/3088
摘要： An integrated circuit having differently-sized features wherein the smaller features have a pitch multiplied relationship with the larger features, which are of such size as to be formed by conventional lithography.
摘要翻译： 具有不同尺寸特征的集成电路，其中较小特征与具有通过常规光刻形成的尺寸的较大特征具有间距倍增关系。
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