公开(公告)号：US20200119027A1

公开(公告)日：2020-04-16

申请号：US16177812

申请日：2018-11-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： WANG XIANG ,  CHIA-CHING HSU ,  CHUN-SUNG HUANG ,  YUNG-LIN TSENG ,  WEI-CHANG LIU ,  SHEN-DE WANG

IPC: H01L27/11524 ,  H01L27/1157 ,  H01L27/11519 ,  H01L27/11565

Abstract: A memory structure including a substrate, at least one stacked gate structure, a first spacer conductive layer, and a first contact is provided. The stacked gate structure is located on the substrate and includes a control gate. The control gate extends in a first direction. The first spacer conductive layer is located on one sidewall of the control gate and is electrically insulated from the control gate. The first spacer conductive layer includes a first merged spacer portion and a first non-merged spacer portion. A line width of the first merged spacer portion is greater than a line width of the first non-merged spacer portion. The first contact is connected to the first merged spacer portion. The memory structure can have a larger process window of contact.

公开(公告)号：US20210265376A1

公开(公告)日：2021-08-26

申请号：US16798126

申请日：2020-02-21

Applicant: United Microelectronics Corp.

Inventor： CHIA-CHING HSU ,  Wang Xiang ,  Shen-De Wang ,  Chun-Sung Huang

IPC: H01L27/11573 ,  H01L27/11568 ,  H01L29/423 ,  H01L29/40 ,  H01L29/78 ,  H01L29/792 ,  H01L21/765 ,  H01L21/28 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, having cell region and high-voltage region. A memory cell is on the substrate within the cell region. The memory cell includes a memory gate structure and a selection gate structure on the substrate. A first spacer is sandwiched between or respectively on sidewalls of the memory cell structure and the selection gate structure. First high-voltage transistor is on the substrate within the high-voltage region. A first composite gate structure of the first high-voltage transistor includes a first gate structure on the substrate, an insulating layer with a predetermined thickness on the substrate in a -like structure or an L-like structure at cross-section, and a second gate structure on the insulating layer along the -like structure or the L-like structure. The selection gate structure and the second gate structure are originated from a same preliminary conductive layer.