公开(公告)号：US09385236B1

公开(公告)日：2016-07-05

申请号：US14748240

申请日：2015-06-24

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ying Sun ,  En-Chiuan Liou ,  Ming-Shing Chen ,  Yu-Cheng Tung ,  Chih-Wei Yang

IPC: H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  G06F17/50

CPC classification number: H01L29/7853 ,  G06F17/5081 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/7856

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a plurality of fin shaped structures and a dummy gate structure. The fin shaped structures are disposed in a substrate, where at least one of the fin shaped structures has a tipped end. The dummy gate structure is disposed on the substrate, and includes an extending portion covering the tipped end.

Abstract translation: 半导体器件及其形成方法，半导体器件包括多个鳍状结构和虚拟栅极结构。 翅片状结构设置在基板中，其中至少一个翅片形结构具有尖端。 虚拟栅极结构设置在基板上，并且包括覆盖端部的延伸部分。

公开(公告)号：US20200083020A1

公开(公告)日：2020-03-12

申请号：US16143419

申请日：2018-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ying Sun ,  En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01J37/302 ,  H01J37/317

Abstract: A method of pattern data preparation includes the following steps. A desired pattern to be formed on a surface of a layer is inputted. A first set of beam shots are determined, and a first calculated pattern on the surface is calculated from the first set of beam shots. The first calculated pattern is rotated, so that a boundary of the desired pattern corresponding to a non-smooth boundary of the first calculated pattern is parallel to a boundary constituted by beam shots. A second set of beam shots are determined to revise the non-smooth boundary of the first calculated pattern, thereby calculating a second calculated pattern being close to the desired pattern on the surface. The present invention also provides a method of forming a pattern in a layer.

公开(公告)号：US10861673B2

公开(公告)日：2020-12-08

申请号：US16143419

申请日：2018-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ying Sun ,  En-Chiuan Liou ,  Yu-Cheng Tung

IPC: H01J37/302 ,  H01J37/317 ,  H01L21/027

Abstract: A method of pattern data preparation includes the following steps. A desired pattern to be formed on a surface of a layer is inputted. A first set of beam shots are determined, and a first calculated pattern on the surface is calculated from the first set of beam shots. The first calculated pattern is rotated, so that a boundary of the desired pattern corresponding to a non-smooth boundary of the first calculated pattern is parallel to a boundary constituted by beam shots. A second set of beam shots are determined to revise the non-smooth boundary of the first calculated pattern, thereby calculating a second calculated pattern being close to the desired pattern on the surface. The present invention also provides a method of forming a pattern in a layer.

公开(公告)号：US09006110B1

公开(公告)日：2015-04-14

申请号：US14074720

申请日：2013-11-08

Applicant: United Microelectronics Corp.

Inventor： Chien-Ying Sun ,  En-Chiuan Liou ,  Jia-Rong Wu ,  Ching-Wen Hung

IPC: H01L21/311 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/308

CPC classification number: H01L21/30604 ,  H01L21/3083 ,  H01L21/823431

Abstract: A method for fabricating a patterned structure of a semiconductor device includes: forming first mandrels and second mandrels on a substrate, wherein a first spacing is defined between the two adjacent first mandrels and a second spacing is defined between the two adjacent second mandrels, the first spacing being wider than the second spacing; forming a cover layer to cover the first mandrels while exposing the second mandrels; etching the cover layer and the second mandrels; removing the cover layer; concurrently forming first spacers on the sides of the first mandrels and a second spacers on the sides of the second mandrels after removing the cover layer; and transferring a layout of the first and second spacers to the substrate so as to form fin-shaped structures.

Abstract translation: 一种用于制造半导体器件的图案化结构的方法包括：在衬底上形成第一心轴和第二心轴，其中在所述两个相邻的第一心轴之间限定第一间隔，并且在所述两个相邻的第二心轴之间限定第二间距， 间隔宽于第二间距; 形成覆盖层以覆盖所述第一心轴同时暴露所述第二心轴; 蚀刻覆盖层和第二芯棒; 去除覆盖层; 在去除覆盖层之后，同时在第一心轴的侧面上形成第一间隔物和在第二心轴的侧面上的第二间隔物; 以及将所述第一和第二间隔物的布局转移到所述基底以形成鳍状结构。