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公开(公告)号：US12125903B2
公开(公告)日：2024-10-22
申请号：US18371440
申请日：2023-09-21
发明人： Shin-Chuan Huang , Chih-Tung Yeh , Chun-Ming Chang , Bo-Rong Chen , Wen-Jung Liao , Chun-Liang Hou
IPC分类号： H01L29/66 , H01L21/265 , H01L29/20 , H01L29/205 , H01L29/207 , H01L29/778 , H01L21/28 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7786 , H01L21/26546 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/66462 , H01L21/2654 , H01L21/28264 , H01L29/41766 , H01L29/4236
摘要： A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
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公开(公告)号：US11264492B2
公开(公告)日：2022-03-01
申请号：US16533812
申请日：2019-08-07
发明人： Shin-Chuan Huang , Chih-Tung Yeh , Chun-Ming Chang , Bo-Rong Chen , Wen-Jung Liao , Chun-Liang Hou
IPC分类号： H01L29/778 , H01L29/66 , H01L29/20 , H01L29/205 , H01L21/265
摘要： A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
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公开(公告)号：US11239338B2
公开(公告)日：2022-02-01
申请号：US16666430
申请日：2019-10-29
IPC分类号： H01L29/66 , H01L29/778 , H01L21/308 , H01L29/205 , H01L29/20
摘要： According to an embodiment of the present invention, a method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
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公开(公告)号：US11081579B2
公开(公告)日：2021-08-03
申请号：US16535052
申请日：2019-08-07
发明人： Chun-Ming Chang , Chih-Tung Yeh
IPC分类号： H01L29/778 , H01L29/66
摘要： An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer and the second III-V compound layer are different from each other. A source electrode and a drain electrode are disposed on the second III-V compound layer. The gate electrode is disposed on the second III-V compound layer between the source electrode and the drain electrode. An insulating layer is disposed between the drain electrode and the gate electrode and covers the second III-V compound layer. At least one electrode is disposed on the insulating layer and contacts the insulating layer, wherein a voltage is applied to the electrode.
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公开(公告)号：US20210134978A1
公开(公告)日：2021-05-06
申请号：US16699706
申请日：2019-12-01
发明人： Chih-Tung Yeh , Shin-Chuan Huang , Chun-Ming Chang , Bo-Rong Chen , Wen-Jung Liao , Chun-Liang Hou
IPC分类号： H01L29/66 , H01L29/778 , H01L29/20 , H01L29/40 , H01L21/02
摘要： A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.
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公开(公告)号：US20210066484A1
公开(公告)日：2021-03-04
申请号：US16596738
申请日：2019-10-08
发明人： Chih-Tung Yeh , Chun-Ming Chang , Bo-Rong Chen , Shin-Chuan Huang , Wen-Jung Liao , Chun-Liang Hou
IPC分类号： H01L29/778 , H01L29/49 , H01L29/20 , H01L29/205
摘要： An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.
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公开(公告)号：US20240355887A1
公开(公告)日：2024-10-24
申请号：US18757558
申请日：2024-06-28
发明人： Chih-Tung Yeh
IPC分类号： H01L29/40 , H01L29/08 , H01L29/417 , H01L21/225 , H01L29/45 , H01L29/778
CPC分类号： H01L29/401 , H01L29/0843 , H01L29/41725 , H01L21/2258 , H01L29/452 , H01L29/7786
摘要： A semiconductor device includes a III-V compound semiconductor layer and a source/drain structure. The source/drain structure is disposed on the III-V compound semiconductor layer. The source/drain structure includes a metal layer and metal silicide patterns. The metal layer is disposed on the metal silicide patterns, and a portion of the metal layer is disposed between the metal silicide patterns adjacent to each other.
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公开(公告)号：US20240322008A1
公开(公告)日：2024-09-26
申请号：US18731392
申请日：2024-06-03
IPC分类号： H01L29/66 , H01L21/308 , H01L29/20 , H01L29/205 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/3081 , H01L29/7787 , H01L29/2003 , H01L29/205
摘要： A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer, forming a second barrier layer on the first barrier layer, forming a first hard mask on the second barrier layer, removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
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公开(公告)号：US20240088279A1
公开(公告)日：2024-03-14
申请号：US18519099
申请日：2023-11-27
发明人： Ming-Hua Chang , Po-Wen Su , Chih-Tung Yeh
IPC分类号： H01L29/778 , H01L21/311 , H01L29/20 , H01L29/66
CPC分类号： H01L29/7781 , H01L21/31116 , H01L29/2003 , H01L29/66462
摘要： A method for forming a semiconductor structure includes the steps of forming a stacked structure on a substrate, forming an insulating layer on the stacked structure, forming a passivation layer on the insulating layer, performing an etching process to form an opening through the passivation layer and the insulating layer to expose a portion of the stacked structure and an extending portion of the insulating layer, and forming a contact structure filling the opening and directly contacting the stacked structure, wherein the extending portion of the insulating layer is adjacent to a surface of the stacked structure directly contacting the contact structure.
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公开(公告)号：US20240071758A1
公开(公告)日：2024-02-29
申请号：US17951119
申请日：2022-09-23
发明人： Chih-Tung Yeh , You-Jia Chang , Bo-Yu Chen , Yun-Chun Wang , Ruey-Chyr Lee , Wen-Jung Liao
IPC分类号： H01L21/02 , H01L21/306 , H01L29/20 , H01L29/423 , H01L29/66 , H01L29/778
CPC分类号： H01L21/0254 , H01L21/30612 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7786
摘要： A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.
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