公开(公告)号：US20180027337A1

公开(公告)日：2018-01-25

申请号：US15246561

申请日：2016-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Sheng Hsu ,  Weng-Yi Chen ,  En-Chan Chen ,  Shih-Wei Li ,  Guo-Chih Wei

IPC: H04R17/02 ,  H04R19/00 ,  H04R31/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: H04R17/025 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/06 ,  H04R7/04 ,  H04R7/20 ,  H04R17/02 ,  H04R19/005 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003

Abstract: A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.

公开(公告)号：US20180339901A1

公开(公告)日：2018-11-29

申请号：US15644430

申请日：2017-07-07

Applicant: United Microelectronics Corp.

Inventor： Guo-Chih Wei ,  Weng-Yi Chen ,  Shih-Wei Li

IPC: B81C1/00

Abstract: A semiconductor process including the following steps is provided. A wafer is provided. The wafer has a front side and a back side. The wafer has a semiconductor device on the front side. A protection layer is formed on the front side of the wafer. The protection layer covers the semiconductor device. A material of the protection layer includes a photoresist material. A surface hardening treatment process is performed on the protection layer. A first patterning process is performed on the back side of the wafer. The semiconductor process can effectively protect the front side of the wafer during a backside process.

公开(公告)号：US09961450B2

公开(公告)日：2018-05-01

申请号：US15246561

申请日：2016-08-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chang-Sheng Hsu ,  Weng-Yi Chen ,  En-Chan Chen ,  Shih-Wei Li ,  Guo-Chih Wei

IPC: H01L29/84 ,  H04R17/02 ,  B81B3/00 ,  B81C1/00 ,  H04R31/00 ,  H04R19/00

CPC classification number: H04R17/025 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/06 ,  H04R7/04 ,  H04R7/20 ,  H04R17/02 ,  H04R19/005 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003

Abstract: A piezoresistive microphone includes a substrate, an insulating layer, and a polysilicon layer. A first pattern is disposed within the polysilicon layer. The first pattern includes numerous first opening. A second pattern is disposed within the polysilicon layer. The second pattern includes numerous second openings. The first pattern surrounds the second pattern. Each first opening and each second opening are staggered. A first resistor is disposed in the polysilicon and between the first pattern and the second pattern. The first resistor is composed of numerous first heavily doped regions and numerous first lightly doped regions. The first heavily doped regions and the first lightly doped regions are disposed in series. The first heavily doped region and the first lightly doped region are disposed alternately. A cavity is disposed in the insulating layer and the substrate.