公开(公告)号：US20230145935A1

公开(公告)日：2023-05-11

申请号：US17979846

申请日：2022-11-03

Applicant: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou

Inventor： MengJiang Xing ,  XiaoZhen Li ,  HongYu Yang ,  MingShan Qu

IPC: C04B35/495 ,  C04B35/626 ,  C04B35/64

CPC classification number: C04B35/495 ,  C04B35/64 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/62675 ,  C04B2235/96 ,  C04B2235/604 ,  C04B2235/3251 ,  C04B2235/3279

Abstract: The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiO-Ta2O5-based microwave dielectric ceramic material sintered at low temperature and its preparation method. It is guided by ion doping modification, not only considering the substitution of ions with similar radius, such as Zn2+ replacing Ni2+ ions, V5+ replacing Ta5+ ions; Meanwhile, the selected doped oxide still has the property of low melting point. Therefore, the microwave dielectric properties of NiO-Ta2O5-based ceramic material can be improved and the appropriate sintering temperature can be reduced. In the invention, by adjusting the molar content of each raw material, the NiO-Ta2O5-based ceramic material with low-temperature sintering, stable temperature and excellent microwave dielectric property is directly synthesized at one time, which can be widely applied to the technical field of LTCC.

公开(公告)号：US11746056B2

公开(公告)日：2023-09-05

申请号：US17979922

申请日：2022-11-03

Applicant: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou

Inventor： MengJiang Xing ,  XiaoZhen Li ,  HongYu Yang ,  MingShan Qu

IPC: C04B35/495 ,  C04B35/64 ,  C04B35/626

CPC classification number: C04B35/495 ,  C04B35/6261 ,  C04B35/64 ,  C04B2235/3255 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3409 ,  C04B2235/6567 ,  C04B2235/66

Abstract: The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa2O6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B2O3, and the radius of Cu2+ ions is similar to that of Ni2+ and Ta5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B2O3—Ta2O5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa2O6 is synthesized at a lower pre-sintering temperature, and NiTa2O6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.

公开(公告)号：US11724966B2

公开(公告)日：2023-08-15

申请号：US17979079

申请日：2022-11-02

Applicant: University of Electronic Science and Technology of China

Inventor： MengJiang Xing ,  MingShan Qu ,  HongYu Yang

IPC: C04B35/495 ,  C04B35/626 ,  C04B35/634 ,  C04B35/638 ,  C04B35/64 ,  H01B3/12

CPC classification number: C04B35/495 ,  C04B35/6262 ,  C04B35/6264 ,  C04B35/62655 ,  C04B35/62695 ,  C04B35/638 ,  C04B35/63416 ,  C04B35/64 ,  H01B3/12 ,  C04B2235/3217 ,  C04B2235/3255 ,  C04B2235/3279 ,  C04B2235/3281 ,  C04B2235/3293 ,  C04B2235/604 ,  C04B2235/606 ,  C04B2235/6567 ,  C04B2235/661

Abstract: A temperature-stable modified NiO—Ta2O5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni2+ ions are replaced by Cu2+ ions, and (Ni1/3Ta2/3)4+ composite ions are replaced by [(Al1/2Nb1/2)ySn1-y]4+ composite ions, which considers that cations with similar ionic radii to Ni2+ and Ta5+ ions can be introduced into the NiTa2O6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa2O6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

公开(公告)号：US11873248B2

公开(公告)日：2024-01-16

申请号：US17979846

申请日：2022-11-03

Applicant: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou

Inventor： MengJiang Xing ,  XiaoZhen Li ,  HongYu Yang ,  MingShan Qu

IPC: C04B35/495 ,  C04B35/626 ,  C04B35/64

CPC classification number: C04B35/495 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/62675 ,  C04B35/64 ,  C04B2235/3251 ,  C04B2235/3279 ,  C04B2235/604 ,  C04B2235/96

Abstract: The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiO—Ta2O5-based microwave dielectric ceramic material sintered at low temperature and its preparation method. It is guided by ion doping modification, not only considering the substitution of ions with similar radius, such as Zn2+ replacing Ni2+ ions, V5+ replacing Ta5+ ions; Meanwhile, the selected doped oxide still has the property of low melting point. Therefore, the microwave dielectric properties of NiO—Ta2O5-based ceramic material can be improved and the appropriate sintering temperature can be reduced. In the invention, by adjusting the molar content of each raw material, the NiO—Ta2O5-based ceramic material with low-temperature sintering, stable temperature and excellent microwave dielectric property is directly synthesized at one time, which can be widely applied to the technical field of LTCC.

公开(公告)号：US20230135062A1

公开(公告)日：2023-05-04

申请号：US17979079

申请日：2022-11-02

Applicant: University of Electronic Science and Technology of China

Inventor： MengJiang Xing ,  MingShan Qu ,  HongYu Yang

IPC: C04B35/495 ,  C04B35/626 ,  C04B35/634 ,  C04B35/638 ,  C04B35/64 ,  H01B3/12

Abstract: A temperature-stable modified NiO—Ta2O5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni2+ ions are replaced by Cu2+ ions, and (Ni1/3Ta2/3)4+ composite ions are replaced by [(Al1/2Nb1/2)ySn1-y]4+ composite ions, which considers that cations with similar ionic radii to Ni2+ and Ta5+ ions can be introduced into the NiTa2O6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa2O6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.

公开(公告)号：US20230132916A1

公开(公告)日：2023-05-04

申请号：US17979922

申请日：2022-11-03

Applicant: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou

Inventor： MengJiang Xing ,  XiaoZhen Li ,  HongYu Yang ,  MingShan Qu

IPC: C04B35/495 ,  C04B35/64 ,  C04B35/626

Abstract: The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa2O6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B2O3, and the radius of Cu2+ ions is similar to that of Ni2+ and Ta5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B2O3—Ta2O5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa2O6 is synthesized at a lower pre-sintering temperature, and NiTa2O6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.