公开(公告)号：US10146238B2

公开(公告)日：2018-12-04

申请号：US15599484

申请日：2017-05-19

Applicant: University of Electronic Science and Technology of China

Inventor： Zekun Zhou ,  Yao Wang ,  Jianwen Cao ,  Hongming Yu ,  Yunkun Wang ,  Anqi Wang ,  Zhuo Wang ,  Bo Zhang

IPC: G05F1/10 ,  G05F3/02 ,  G05F1/46 ,  G05F3/24 ,  G05F3/16 ,  H02J7/00

Abstract: A resistorless CMOS low power voltage reference circuit is provided. The start-up circuit is used to prevent the circuit to stay in the zero state and stop working when the circuit gets out of the zero state. The self-biased VPTAT generating circuit generate the voltage VPTAT which has positive temperature coefficient. The square-law current generating circuit generates a square-law current which is proportional to μT2 through the VPTAT. Finally, the reference voltage VREF is obtained by introducing the square-law current into the reference voltage output circuit. The reference voltage VREF of this application can realize approximative zero temperature coefficient in the temperature range of −40° C.˜100° C. This application improves temperature characteristic which may be poorer due to temperature nonlinearity of carrier mobility based on the traditional subthreshold reference. This application can reduce the power consumption from μW level to nW level and realize low power consumption.

公开(公告)号：US10019023B2

公开(公告)日：2018-07-10

申请号：US15690290

申请日：2017-08-30

Applicant: University of Electronic Science and Technology of China

Inventor： Xin Ming ,  Di Gao ,  Jiahao Zhang ,  Xuan Zhang ,  Xiuling Wei ,  Yao Wang ,  Zhuo Wang ,  Bo Zhang

IPC: G05F1/575 ,  H03F3/45

CPC classification number: G05F1/575 ,  H03F3/45183 ,  H03F3/4521 ,  H03F2200/456 ,  H03F2203/45288 ,  H03F2203/45318

Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.